Richard J Bojko

US Patent:

6959483, Nov 1, 2005

Filed:

May 20, 2003

Appl. No.:

10/441575

Inventors:

Billy Wayne Crue - Pittsburgh PA, US
Michael Kevin Minor - Gibsonia PA, US
Richard Joseph Bojko - Minneapolis MN, US

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

G11B005/127
H04R031/00

US Classification:

2960313, 2960307, 2960311, 2960316, 2960318, 360122, 360123, 360126, 360317, 427127, 427128

Abstract:

A recording head for use with magnetic recording media has an improved structure, made by a simplified manufacturing process. The electrically insulating materials within the recording head are inorganic. The insulating materials are vacuum deposited, with no need to use a hard bake process that would be required for use of organic insulators. In one embodiment, the write gap is first masked, and then the coil is deposited on the write gap. A slightly larger area is then exposed within the mask, permitting insulation to be deposited over the coil. In a second embodiment, the coil and associated insulation are deposited and then milled to have a tapered configuration. This recording head also places the writing pole on a very flat surface, thereby allowing plated or deposited films to be easily manufactured to correspond to narrow track widths.

US Patent:

6492094, Dec 10, 2002

Filed:

Apr 19, 2001

Appl. No.:

09/839197

Inventors:

Richard Joseph Bojko - Minneapolis MN

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

G03C 500

US Classification:

430296, 430328, 430942

Abstract:

A lithography method combines both high gap resolution and high processing speed. An electron beam sensitive resist is applied to a substrate, followed by a photoresist. The undesired portions of the photoresist are removed through photolithography. An electron beam flood exposure or oxygen ashing is used to remove those portions of the electron beam sensitive resist not protected by the photoresist. An optical flood is used to remove the remaining photoresist. Electron beam lithography is then used to define narrow gaps within the remaining electron beam sensitive resist.