Ramamurthy M Ramprasad

US Patent:

7136028, Nov 14, 2006

Filed:

Aug 27, 2004

Appl. No.:

10/927921

Inventors:

Ramamurthy Ramprasad - Phoenix AZ, US
Michael F. Petras - Phoenix AZ, US
Chi Taou Tsai - Candler AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01Q 15/02

US Classification:

343909, 343700 MS

Abstract:

Disclosed herein are various high-impedance surfaces having high capacitance and inductance properties and methods for their manufacture. One exemplary high-impedance surface includes a plurality of conductive structures arranged in a lattice, wherein at least a subset of the conductive structures include a plurality of conductive plates arranged along a conductive post so that the conductive plates of one conductive structure interleave with one or more conductive plates of one or more adjacent conductive structure. Another exemplary high-impedance surface includes a plurality of conductive structures arranged in a lattice, where the conductive structures include one or more fractalized conductive plates having either indentions and/or projections that are coextensive with corresponding projections or indentations, respectively, of one or more adjacent conductive structures. Also disclosed are various exemplary implementations of such high-impedance surfaces.

US Patent:

7136029, Nov 14, 2006

Filed:

Aug 27, 2004

Appl. No.:

10/927944

Inventors:

Ramamurthy Ramprasad - Phoenix AZ, US
Michael F. Petras - Phoenix AZ, US
Chi Taou Tsai - Candler AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01Q 15/02
H01Q 1/38

US Classification:

343909, 343700 MS

Abstract:

Disclosed herein are various high-impedance surfaces having high capacitance and inductance properties. One exemplary high-impedance surface includes a plurality of conductive structures arranged in a lattice, wherein at least a subset of the conductive structures include a plurality of conductive plates arranged along a conductive post so that the conductive plates of one conductive structure interleave with one or more conductive plates of one or more adjacent conductive structure. Another exemplary high-impedance surface includes a plurality of conductive structures arranged in a lattice, where the conductive structures include one or more fractalized conductive plates having either indentions and/or projections that are coextensive with corresponding projections or indentations, respectively, of one or more adjacent conductive structures. Also disclosed are various exemplary implementations of such high-impedance surfaces.

US Patent:

7432792, Oct 7, 2008

Filed:

Nov 29, 2004

Appl. No.:

10/596044

Inventors:

Philippe Renaud - Tournefeuille, FR
Ramamurthy Ramprasad - Phoenix AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01F 5/00

US Classification:

336200, 336223, 336232

Abstract:

An electrical inductor circuit element comprising an elongate electrical conductor coupled magnetically with thin layers of magnetic material extending along at least a part of the conductor above and below the conductor. The aspect ratio of the thickness of each of the layers of magnetic material to its lateral dimensions is between 0. 001 and 0. 5 and is preferably between 0. 01 and 0. 1. This range of aspect ratio has a high ferromagnetic resonance frequency. The inductor preferably includes magnetic interconnections extending beside the conductor and interconnecting the layers of magnetic material at positions where magnetic flux generated by electrical current flowing along the conductor is transverse to the layers.

US Patent:

20040239451, Dec 2, 2004

Filed:

May 29, 2003

Appl. No.:

10/447448

Inventors:

Ramamurthy Ramprasad - Phoenix AZ, US
Michael Petras - Phoenix AZ, US

International Classification:

H01P001/20

US Classification:

333/202000

Abstract:

A microwave filter is formed from an electromagnetic band gap structure. The electromagnetic band gap structure includes a periodic array of metal features () formed within a dielectric matrix (). A defect feature () is formed within the periodic array of metal features () in order to create a pass band within a stop band region.