Pratik J Mankidy

US Patent:

8470127, Jun 25, 2013

Filed:

Jan 6, 2011

Appl. No.:

12/985568

Inventors:

Anthony de la Llera - Fremont CA, US
Pratik Mankidy - Fremont CA, US
Michael C. Kellogg - Oakland CA, US
Gregory R. Bettencourt - Fremont CA, US
Roger Patrick - Mountain View CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C23C 16/00
H01L 21/00

US Classification:

15634543, 118723 E, 118715

Abstract:

A showerhead electrode and assembly useful for plasma etching includes cam locks which provide improved thermal contact between the showerhead electrode and a backing plate. The cam locks include cam shafts in the backing plate which engage enlarged heads of studs mounted on the showerhead electrode. The assembly can include an annular shroud surrounding the showerhead electrode and eight of the cam shafts in the backing plate can be operated such that each cam shaft simultaneously engages a stud on the annular shroud and a stud in an outer row of studs on the showerhead electrode. Another eight cam shafts can be operated such that each cam shaft engages a pair of studs on inner and middle rows of the studs mounted of the showerhead electrode.

US Patent:

8573152, Nov 5, 2013

Filed:

Sep 3, 2010

Appl. No.:

12/875869

Inventors:

Anthony de la Llera - Fremont CA, US
Pratik Mankidy - Fremont CA, US
Michael C. Kellogg - Oakland CA, US
Rajinder Dhindsa - San Jose CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C23C 16/455
C23C 16/505
C23C 16/509
B23P 19/00
C23F 1/00
H01L 21/306
C23C 16/06
C23C 16/22

US Classification:

118723E, 118723 R, 15634543, 15634544, 15634545, 15634546, 15634547, 29746

Abstract:

A showerhead electrode, a gasket set and an assembly thereof in plasma reaction chamber for etching semiconductor substrates are provided with improved a gas injection hole pattern, positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. A method of assembling the inner electrode and gasket set to a supporting member includes simultaneous engagement of cam locks.

US Patent:

20110070740, Mar 24, 2011

Filed:

Sep 17, 2010

Appl. No.:

12/884269

Inventors:

Gregory R. Bettencourt - Fremont CA, US
Gautam Bhattacharyya - San Ramon CA, US
Sandy Chao - Sunol CA, US
Anthony de la Llera - Fremont CA, US
Pratik Mankidy - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/3065
C23C 16/54

US Classification:

438710, 118723 MP, 257E21218

Abstract:

An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the showerhead electrode.

US Patent:

20110083809, Apr 14, 2011

Filed:

Oct 13, 2010

Appl. No.:

12/903412

Inventors:

Anthony de la Llera - Fremont CA, US
Pratik Mankidy - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/465
H01R 43/00
F16J 15/02

US Classification:

15634534, 29825, 277628

Abstract:

An inner electrode of a showerhead electrode assembly useful for plasma etching includes features providing improved positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. The assembly can include a thermal gasket set and fasteners such as bolts or cam locks located on a radius of to the radius of the inner electrode. A method of assembling the inner electrode and gasket set to a supporting member is also provided.

US Patent:

20110126852, Jun 2, 2011

Filed:

Nov 30, 2010

Appl. No.:

12/956727

Inventors:

Rajinder Dhindsa - San Jose CA, US
Pratik Mankidy - Fremont CA, US
Chris Kimball - San Jose CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B08B 7/00
H01L 21/3065

US Classification:

134 11, 15634551

Abstract:

A substrate support for a plasma processing chamber has an angled sidewall at an upper periphery thereof. The substrate is surrounded by an edge ring which underlies a substrate supported on an upper substrate support surface of the substrate support during plasma processing. The angled sidewall is the only surface of the substrate support exposed and subject to byproduct deposition during plasma processing. The angled sidewall enhances sputtering rate of the byproduct deposition during an in situ chamber clean process wherein a cleaning gas supplied to the chamber is energized into a plasma state for cleaning the byproduct deposition.

US Patent:

20230071249, Mar 9, 2023

Filed:

Jan 29, 2021

Appl. No.:

17/795843

Inventors:

- Fremont CA, US
Pratik Mankidy - Fremont CA, US
John P. Holland - San Jose CA, US

International Classification:

H01J 37/32
G01R 33/02

Abstract:

Methods, systems, apparatuses, and computer programs are presented for controlling etch rate and plasma uniformity using magnetic fields. A semiconductor substrate processing apparatus includes a vacuum chamber including a processing zone for processing a substrate using capacitively coupled plasma (CCP). The apparatus further includes a magnetic field sensor configured to detect a signal representing a residual magnetic field associated with the vacuum chamber. At least one magnetic field source is configured to generate one or more supplemental magnetic fields through the processing zone of the vacuum chamber. A magnetic field controller is coupled to the magnetic field sensor and the at least one magnetic field source. The magnetic field controller is configured to adjust at least one characteristic of the one or more supplemental magnetic fields, causing the one or more supplemental magnetic fields to reduce the residual magnetic field to a pre-determined value.

US Patent:

20230063007, Mar 2, 2023

Filed:

Feb 2, 2021

Appl. No.:

17/797669

Inventors:

- Fremont CA, US
Stephan K. Piotrowski - San Jose CA, US
Jaewon Kim - Fremont CA, US
Pratik Mankidy - Fremont CA, US
Takumi Yanagawa - Fremont CA, US
Dongjun Wu - San Jose CA, US
Anthony De La Llera - Fremont CA, US
Zehua Jin - Houston TX, US

International Classification:

H01J 37/32

Abstract:

A plasma lining structure is used in a process chamber to block direct line-of-sight for plasma generated within to grounded surface. The plasma lining structure includes a plurality of sections to cover at least one or more portions of an inside surface of a plasma confinement structure disposed in the process chamber. The sections of the plasma lining structure are positioned between a plasma region and the sidewall of the plasma confinement structure, when the plasma lining structure and the plasma confinement structure are disposed in the plasma chamber, such that the sections directly face the plasma region.

US Patent:

20190244793, Aug 8, 2019

Filed:

Feb 5, 2018

Appl. No.:

15/888719

Inventors:

- Fremont CA, US
Alexei Marakhtanov - Albany CA, US
John Holland - San Jose CA, US
Pratik Jacob Mankidy - Fremont CA, US
Anthony Dela Llera - Fremont CA, US
Haley Kim - Fremont CA, US
Hyungjoo Shin - Fremont CA, US

International Classification:

H01J 37/32
C23C 16/455

Abstract:

An upper electrode for use in a substrate processing system includes a lower surface. The lower surface includes a first portion and a second portion and is plasma-facing. The first portion includes a first surface region that has a first thickness. The second portion includes a second surface region that has a varying thickness such that the second portion transitions from a second thickness to the first thickness.