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Pengdi Han

from Woodridge, IL

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Pengdi Han Phones & Addresses

  • Woodridge, IL

Us Patents

  • Process For The Preparation Of Piezoelectric Crystal Elements

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  • US Patent:
    7908722, Mar 22, 2011
  • Filed:
    Oct 15, 2008
  • Appl. No.:
    12/252037
  • Inventors:
    Pengdi Han - Bolingbrook IL, US
  • Assignee:
    H.C. Materials Corporation - Bolingbrook IL
  • International Classification:
    H01L 41/04
    H02N 2/00
  • US Classification:
    29 2535, 29846, 310333, 310360, 252 629 PZ
  • Abstract:
    A process for the preparation of piezoelectric single crystal elements involving the steps of mechanically finishing of a single crystal element with cuttings such as zxt45, coating electrodes on a pair of Z surfaces, poling the single crystal in a direction along the axis under a 500V/mm electric field.

  • Crystal Growth System And Method For Lead-Contained Compositions Using Batch Auto-Feeding

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  • US Patent:
    8535442, Sep 17, 2013
  • Filed:
    Jul 12, 2007
  • Appl. No.:
    12/373080
  • Inventors:
    Pengdi Han - Bolingbrook IL, US
    Jian Tian - Napierville IL, US
  • Assignee:
    H.C. Materials Corporation - Bolingbrook IL
  • International Classification:
    C30B 35/00
    C30B 13/28
    C30B 11/00
    C30B 13/00
    C30B 21/04
    C30B 28/08
  • US Classification:
    117223, 117200, 117202, 117206, 117219, 117220
  • Abstract:
    This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).

  • High Frequency Piezoelectric Crystal Composites, Devices, And Methods For Manufacturing The Same

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  • US Patent:
    8559273, Oct 15, 2013
  • Filed:
    Oct 13, 2011
  • Appl. No.:
    13/821425
  • Inventors:
    Pengdi Han - Bolingbrook IL, US
    Jian Tian - Bolingbrook IL, US
    Kevin Meneou - Bolingbrook IL, US
    Brandon Stone - Bolingbrook IL, US
  • Assignee:
    H.C. Materials Corporation - Bolingbrook IL
  • International Classification:
    G03B 42/06
    H04R 17/00
  • US Classification:
    367140
  • Abstract:
    The present invention generally relates to high frequency piezoelectric crystal composites, devices, and method for manufacturing the same. In adaptive embodiments an improved imaging device, particularly a medical imaging device or a distance imaging device, for high frequency (>20 MHz) applications involving an imaging transducer assembly is coupled to a signal imagery processor. Additionally, the proposed invention presents a system for photolithography based micro-machined piezoelectric crystal composites and their uses resulting in improved performance parameters.

  • Piezoelectric Crystal Elements Of Shear Mode And Process For The Preparation Thereof

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  • US Patent:
    20070290579, Dec 20, 2007
  • Filed:
    Jun 15, 2007
  • Appl. No.:
    11/818735
  • Inventors:
    Pengdi Han - Bolingbrook IL, US
  • International Classification:
    H01L 41/187
    B05D 5/12
    C04B 35/46
  • US Classification:
    310358000, 2520629PZ, 427100000
  • Abstract:
    Piezoelectric crystal elements are provided having preferred cut directions that optimize the shear mode piezoelectric properties. In the discovered cut directions, the crystal elements have super-high piezoelectric performance with d, dand dshear modes at room temperature. The dshear mode crystal gives a maximum d value and is free from the cross-talk of dand d. The dmode is extremely reliable compared to other shear elements due to its ready re-poling capability. The crystal elements may be beneficially used for high-sensitive acoustic transducers.

  • Process For The Preparation Of Piezoelectric Crystal Elements And A Product Thereof

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  • US Patent:
    20110215676, Sep 8, 2011
  • Filed:
    Feb 11, 2011
  • Appl. No.:
    13/025751
  • Inventors:
    PENGDI HAN - Bolingbrook IL, US
  • International Classification:
    H01L 41/18
    H01L 41/22
    H01L 41/04
  • US Classification:
    310333, 29 2535, 310360
  • Abstract:
    A process for the preparations of piezoelectric single crystal elements involving the steps of mechanically finishing a single crystal element with select cuttings, coating electrodes on a pair of Z surfaces, poling the single crystal along the 011/axis under a 500V/mm electric field and a product made by the process thereof.

  • High Frequency Piezoelectric Crystal Composites, Devices, And Methods For Manufacturing The Same

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  • US Patent:
    20130211251, Aug 15, 2013
  • Filed:
    Oct 13, 2011
  • Appl. No.:
    13/821400
  • Inventors:
    Pengdi Han - Bolingbrook IL, US
    Jian Tian - Bolingbrook IL, US
    Kevin Meneou - Bolingbrook IL, US
    Brandon Stone - Bolingbrook IL, US
  • Assignee:
    H.C. MATERIALS CORPORATION - Bolingbrook IL
  • International Classification:
    H01L 41/18
    A61B 8/00
  • US Classification:
    600437, 252 629PZ
  • Abstract:
    The present invention generally relates to high frequency piezoelectric crystal composites, devices, and method for manufacturing the same. In adaptive embodiments an improved imaging device, particularly a medical imaging device or a distance imaging device, for high frequency (>20 MHz) applications involving an imaging transducer assembly is coupled to a signal imagery processor. Additionally, the proposed invention presents a system for photolithography based micro-machined piezoelectric crystal composites and their uses resulting in improved performance parameters.

  • Crystal Growth System And Method For Lead-Contained Compositions Using Batch Auto-Feeding

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  • US Patent:
    20130312657, Nov 28, 2013
  • Filed:
    Aug 1, 2013
  • Appl. No.:
    13/957074
  • Inventors:
    PENGDI HAN - Bolingbrook IL, US
    Jian Tian - Napierville IL, US
  • Assignee:
    H.C.MATERIALS CORPORATION - Bolingbrook IL
  • International Classification:
    C30B 11/00
  • US Classification:
    117 81, 117223
  • Abstract:
    This invention includes a system and a method for growing crystals including a batch auto-feeding mechanism. The proposed system and method provide a minimization of compositional segregation effect during crystal growth by controlling growth rate involving a high-temperature flow control system operable in an open and a closed loop crystal growth process. The ability to control the growth rate without corresponding loss of volatilize-able elements enables significantly improvement in compositional homogeneity and a consequent increase in crystal yield. This growth system and method can be operated in production scale, simultaneously for a plurality of growth crucibles to further the reduction of manufacturing costs, particularly for the crystal materials of binary or ternary systems with volatile components, such as Lead (Pb) and Indium (In).

  • Piezoelectric Crystal Elements Of Shear Mode

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  • US Patent:
    20160192905, Jul 7, 2016
  • Filed:
    Nov 16, 2015
  • Appl. No.:
    14/941751
  • Inventors:
    - Bolingbrook IL, US
    PENGDI HAN - Naperville IL, US
  • Assignee:
    CTG ADVANCED MATERIALS, LLC - Bolingbrook IL
  • International Classification:
    A61B 8/00
    H01L 41/338
    H01L 41/257
    H01L 41/29
    H01L 41/113
    H01L 41/187
  • Abstract:
    Piezoelectric crystal elements are provided having preferred cut directions that optimize the shear mode piezoelectric properties. In the discovered cut directions, the crystal elements have super-high piezoelectric performance with d, dand dshear modes at room temperature. The dshear mode crystal gives a maximum d value and is free from the cross-talk of dand d. The dmode is extremely reliable compared to other shear elements due to its ready re-poling capability. The crystal elements may be beneficially used for high-sensitive acoustic transducers.
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