Patrick J Guthrie

US Patent:

6495000, Dec 17, 2002

Filed:

Jul 16, 2001

Appl. No.:

09/906590

Inventors:

James Mikel Atkinson - Camas WA
Hirohiko Nishiki - Nara, JP
Patrick L. Guthrie - Camas WA

Assignee:

Sharp Laboratories of America, Inc. - Camas WA

International Classification:

C23C 1434

US Classification:

20419212, 20429806, 20429811, 20429814, 20419226, 20419229

Abstract:

A system and method have been provided for an improved oxide deposition process using a DC sputtering magnetron. The invention prolongs the useful life of the anode by providing shielded electron collection surfaces, to minimize the deposition of insulator material on the anode. Specifically, the anode has a fin with a bottom electron collection surface that is shielded from the target material deposition. A small electro-magnet helps deflect the flow of electrons to the bottom surface of the fin. Vias in the fin promote the flow of electrons to the fin top surface, which is also shielded from the deposition material, even if deposition material begins to accumulate on the fin bottom surface.

Author:

Patrick Guthrie

ISBN #:

0470834056