Stephen J. Fonash - State College PA Osama O. Awadelkarim - State College PA Murat Okandan - State College PA Maria M. Ozaita-Mintegui - Bilbao, ES
Assignee:
The Penn State Research Foundation - University Park PA
International Classification:
G01R 3128
US Classification:
324759
Abstract:
An approach using two terminal current measurements, preferably in a cyclic current-voltage sweeping procedure, and specialized test structure, is shown to be very useful in detecting processing induced changes in poly-Si/ultra-thin SiO. sub. 2 /substrate Si structures. The charging current structure discernible in this approach is seen to have different features depending on processing history of the device. This is shown for the specific case of plasma gate definition etching with or without annealing.