Oleg B Shchekin from 44 Robblee Ave, San Francisco, CA 94124, age 49, Phone: 415 370-9808

Us Patents

Thin Backlight With Flipped Light Emitting Diode
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US Patent:

7534025, May 19, 2009
Filed:

Aug 25, 2006
Appl. No.:

11/467522
Inventors:

Gerard Harbers - Sunnyvale CA, US
Oleg B. Shchekin - San Francisco CA, US
Serge Bierhuizen - Milpitas CA, US
Assignee:

Philips Lumiled Lighting Company, LLC - San Jose CA
International Classification:

F21V 7/041
US Classification:

362612, 362 26, 362 27, 362600, 362601, 362615
Abstract:

One or more LEDs are mounted within an LCD without the use of any printed circuit board (PCB), thus reducing the thickness of the LCD by about the thickness of the conventional PCB. In one embodiment, the LED and submount are mounted so that the submount is opposing the liquid crystal layer side of the LCD, so that the liquid crystal layers provide the mechanical support for the submount and LED die. The LED die (mounted on the submount) may be inserted into a cavity formed in the “top” surface of the light guide, and the top surface of the light guide is abutted against the liquid crystal layers. In such a configuration, the LED light source, including all supporting components, adds no thickness to the LCD. In another embodiment, on the “bottom” surface of the LCD opposing the LED die is an electrically switchable mirror that is either reflective or transparent. In its transparent state, the LED in the LCD may be used as a flash in a cell phone camera, while the LCD may be viewed to take the picture.

Low Profile Side Emitting Led
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US Patent:

7626210, Dec 1, 2009
Filed:

Jun 9, 2006
Appl. No.:

11/423419
Inventors:

Oleg Borisovich Shchekin - San Francisco CA, US
Mark Pugh - Los Gatos CA, US
Gerard Harbers - Sunnyvale CA, US
Michael R. Krames - Los Altos CA, US
John E. Epler - Milpitas CA, US
Assignee:

Philips Lumileds Lighting Company, LLC - San Jose CA
International Classification:

H01L 29/20
US Classification:

257 98, 257E31127, 385 4, 362610, 362612
Abstract:

Low profile, side-emitting LEDs are described, where all light is efficiently emitted within a relatively narrow angle generally parallel to the surface of the light-generating active layer. The LEDs enable the creation of very thin backlights for backlighting an LCD. In one embodiment, the LED is a flip chip with the n and p electrodes on the same side of the LED, and the LED is mounted electrode-side down on a submount. A reflector is provided on the top surface of the LED so that light impinging on the reflector is reflected back toward the active layer and eventually exits through a side surface of the LED. A waveguide layer and/or one or more phosphors layers are deposed between the semiconductor layers and the reflector for increasing the side emission area for increased efficiency. Side-emitting LEDs with a thickness of between 0. 2-0. 4 mm can be created.

Method Of Removing The Growth Substrate Of A Semiconductor Light Emitting Device
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US Patent:

7754507, Jul 13, 2010
Filed:

Jun 9, 2005
Appl. No.:

11/149679
Inventors:

John E. Epler - San Jose CA, US
Oleg B. Shchekin - San Francisco CA, US
Ling Zhou - Dublin CA, US
International Classification:

H01L 21/00
US Classification:

438 26, 257E21511
Abstract:

A semiconductor structure formed on a growth substrate and including a light emitting layer disposed between an n-type region and a p-type region is attached to a carrier by a connection that supports the semiconductor structure sufficiently to permit removal of the growth substrate. In some embodiments, the semiconductor structure is a flip chip device. The semiconductor structure may be attached to the carrier by, for example, a metal bond that supports almost the entire lateral extent of the semiconductor structure, or by interconnects such as solder or gold stud bumps. An underfill material which supports the semiconductor structure is introduced in any spaces between the interconnects. The underfill material may be a liquid that is cured to form a rigid structure. The growth substrate may then be removed without causing damage to the semiconductor structure.

Process For Preparing A Semiconductor Light-Emitting Device For Mounting
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US Patent:

8062925, Nov 22, 2011
Filed:

May 16, 2006
Appl. No.:

11/383522
Inventors:

Oleg Borisovich Shchekin - San Francisco CA, US
Xiaolin Sun - Pleasanton CA, US
Decai Sun - Los Altos CA, US
Assignee:

Koninklijke Philips Electronics N.V. - Eindhoven
Philips Lumileds Lighting Company LLC - San Jose CA
International Classification:

H01L 21/00
US Classification:

438106, 438 25, 438 26, 257E21527
Abstract:

A process for preparing a semiconductor light-emitting device for mounting is disclosed. The light-emitting device has a mounting face for mounting to a sub-mount. The process involves treating at least one surface of the light-emitting device other than the mounting face to lower a surface energy of the at least one surface, such that when mounting the light-emitting device, an underfill material applied between the mounting face and the sub-mount is inhibited from contaminating the at least one surface.

Low Profile Side Emitting Led With Window Layer And Phosphor Layer
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US Patent:

8080828, Dec 20, 2011
Filed:

Dec 12, 2007
Appl. No.:

11/954712
Inventors:

Michael R. Krames - Los Altos CA, US
Gerd Mueller - San Jose CA, US
Oleg Borisovich Shchekin - San Francisco CA, US
Mark Pugh - Los Gatos CA, US
Gerard Harbers - Sunnyvale CA, US
John E. Epler - San Jose CA, US
Serge Bierhuizen - Santa Rosa CA, US
Assignee:

Philips Lumileds Lighting Company, LLC - San Jose CA
International Classification:

H01L 33/00
US Classification:

257 98, 257 99, 257100, 257E21127
Abstract:

Low profile, side-emitting LEDs are described that generate white light, where all light is emitted within a relatively narrow angle generally parallel to the surface of the light-generating active layer. The LEDs enable the creation of very thin backlights for backlighting an LCD. In one embodiment, the LED emits blue light and is a flip chip with the n and p electrodes on the same side of the LED. Separately from the LED, a transparent wafer has deposited on it a red and green phosphor layer. The phosphor color temperature emission is tested, and the color temperatures vs. positions along the wafer are mapped. A reflector is formed over the transparent wafer. The transparent wafer is singulated, and the phosphor/window dice are matched with the blue LEDs to achieve a target white light color temperature. The phosphor/window is then affixed to the LED.

Remote Wavelength Converting Material Configuration For Lighting
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US Patent:

8104907, Jan 31, 2012
Filed:

Apr 29, 2009
Appl. No.:

12/432521
Inventors:

Oleg B. Shchekin - San Francisco CA, US
Serge J. Bierhuizen - Santa Rosa CA, US
Assignee:

Koninklijke Philips Electronics N.V. - Eindhoven
International Classification:

F21V 33/00
US Classification:

362 84
Abstract:

A device includes a reflector and a wavelength converting material disposed on the reflector. A backlight is disposed between the reflector and a surface to be illuminated, such as a liquid crystal display panel. The backlight includes a light source and a waveguide. The waveguide is configured to direct a majority of light from the light source toward the reflector. At least a portion of the light is converted by the wavelength converted material, reflected by the reflector, and incident on the surface to be illuminated.

Light Emitting Device Grown On Wavelength Converting Substrate
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US Patent:

8154052, Apr 10, 2012
Filed:

May 6, 2010
Appl. No.:

12/775201
Inventors:

Nathan F. Gardner - Sunnyvale CA, US
Aurelien J. F. David - San Francisco CA, US
Oleg B. Shchekin - San Francisco CA, US
Assignee:

Koninklijke Philips Electronics N.V. - Eindhoven
Philips Lumileds Lighting Company, LLC - San Jose CA
International Classification:

H01L 31/072
H01L 31/109
H01L 31/0238
H01L 31/0336
US Classification:

257201, 257 88, 257104, 257E21352, 257E21366, 257E33061
Abstract:

In some embodiments of the invention, a device includes a substrate and a semiconductor structure. The substrate includes a wavelength converting element comprising a wavelength converting material disposed in a transparent material, a seed layer comprising a material on which III-nitride material will nucleate, and a bonding layer disposed between the wavelength converting element and the seed layer. The semiconductor structure includes a III-nitride light emitting layer disposed between an n-type region and a p-type region, and is grown on the seed layer.

Optoelectronic And Electronic Devices Based On Quantum Dots Having Proximity-Placed Acceptor Impurities, And Methods Therefor
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US Patent:

20040131097, Jul 8, 2004
Filed:

Jan 7, 2003
Appl. No.:

10/338509
Inventors:

Dennis Deppe - Austin TX, US
Oleg Shchekin - Austin TX, US
International Classification:

H01S005/00
US Classification:

372/045000
Abstract:

Solid-state optoelectronic and electronic devices that use semiconductor quantum dots for manipulation of photonic or electronic properties include a semiconductor active region forming a quantum dot heterostructure having a plurality of quantum dot layers each having discrete quantum hole states and a p-type impurity layer formed proximate to at least one of the quantum dot layers to provide excess equilibrium hole charge to occupy at least some of the discrete quantum hole states to improve To and other performance characteristics of quantum dot devices.