Norman E Parker

Author:

Norman Parker

ISBN #:

0805914331

Author:

Norman Scott Parker

ISBN #:

0937174017

Address:

231 Greenfield Pl, Brandon, MS 39047

VIN:

1GNFC13057R389749

Make:

CHEVROLET

Model:

TAHOE

Year:

2007

US Patent:

48188727, Apr 4, 1989

Filed:

May 11, 1987

Appl. No.:

7/049736

Inventors:

Norman W. Parker - Westlake Village CA
William G. Turnbull - Newbury Park CA
William P. Robinson - Newbury Park CA

Assignee:

Microbeam Inc. - Newbury Park CA

International Classification:

H01J 3726

US Classification:

250309

Abstract:

An integrated charge neutralization and imaging system is disclosed. An energy analyzer is mounted directed above a target surface consisting of a 90 degree spherical electrostatic capacitor with variable voltage on both the inner and outer electrodes. Circular apertures are mounted at the entrance and exit of the analyzer to limit the fringing electric fields and define the beam size. An electrostatic lenses is used for focusing the beam from the electron gun into the virtual object plane of the energy analyzer. It is also used to collect secondary electrons or secondary ions leaving the energy analyzer and focused them into the imaging optics. A defector is used for steering the electron beam onto the axis of the lens. This deflector is also used to steer the secondary electrons or secondary ions into the electron/ion detector, or to steer the secondary ions into the SIMS mass filter entrance aperture. An electrons gun is used for providing a beam of electrons which is aimed towards the deflector, and then on through the lens and energy analyzer, finally ending up at the target surface.

US Patent:

50357875, Jul 30, 1991

Filed:

Dec 18, 1989

Appl. No.:

7/453413

Inventors:

Norman W. Parker - Westlake Village CA
William P. Robinson - Newbury Park CA
Robert L. Piccioni - Thousand Oaks CA

Assignee:

MicroBeam, Inc. - Newbury Park CA

International Classification:

C23F 102

US Classification:

20419234

Abstract:

Apparatus and method for repairing semiconductor masks and reticles is disclosed, utilizing a focused ion beam system capable of delivering, from a single ion beam column, several different species of focused ion beams, each of which is individually optimized to meet the differing requirements of the major functions to be performed in mask repair. This method allows the mask to be imaged with high resolution and minimum mask damage. Opaque defects are removed by sputter etching at high rates with minimum damage to the mask substrate, and clear defects are filled in at high rates directly from the beam by deposition of a metallic or other substance compatible with the mask materials. A focused ion beam column able to produce precisely focused ion beams is employed and is operated at high energies for imaging and sputter etching, and at low energies for imaging and deposition. A liquid metal alloy source containing suitable atomic species is employed.

US Patent:

45567948, Dec 3, 1985

Filed:

Jan 30, 1985

Appl. No.:

6/696616

Inventors:

James W. Ward - Canoga Park CA
Herbert Schlanger - Simi Valley CA
Hugh McNulty - Santa Monica CA
Norman W. Parker - Camarillo CA

Assignee:

Hughes Aircraft Company - El Segundo CA

International Classification:

G01N 2300
H01J 3726

US Classification:

250309

Abstract:

A secondary ion collection and transport system, for use with an ion microprobe, which is very compact and occupies only a small working distance, thereby enabling the primary ion beam to have a short focal length and high resolution. Ions sputtered from the target surface by the primary beam's impact are collected between two arcuate members having radii of curvature and applied voltages that cause only ions within a specified energy band to be collected. The collected ions are accelerated and focused in a transport section consisting of a plurality of spaced conductive members which are coaxial with and distributed along the desired ion path. Relatively high voltages are applied to alternate transport sections to produce accelerating electric fields sufficient to transport the ions through the section to an ion mass analyzer, while lower voltages are applied to the other transport sections to focus the ions and bring their velocity to a level compatible with the analyzing apparatus.

US Patent:

47897872, Dec 6, 1988

Filed:

May 27, 1987

Appl. No.:

7/055414

Inventors:

Norman W. Parker - Westlake Village CA

Assignee:

MicroBeam Inc. - Newbury Park CA

International Classification:

H01J 314
G21K 108
B01D 5944

US Classification:

250396ML

Abstract:

A Wien filter for use in charged particle beam systems is disclosed, having two opposed resistive magnetic pole pieces separated from a set of excitation coils by an electrically insulating material. Two opposed electric pole pieces are positioned in orthogonal relationship to and in physical contact with the magnetic pole pieces to form a physical aperture through which the charged particles will pass. The resistivity of the magnetic pole pieces is such that sufficient current will flow through them between the electric pole pieces to establish a uniform electric field over the entire physical aperture.

US Patent:

51659549, Nov 24, 1992

Filed:

Dec 18, 1989

Appl. No.:

7/456212

Inventors:

Norman W. Parker - Westlake Village CA
William P. Robinson - Newbury Park CA
Robert L. Piccioni - Thousand Oaks CA

Assignee:

Microbeam, Inc. - Mountain View CA

International Classification:

B05D 306

US Classification:

427526

Abstract:

Apparatus and method for repairing semiconductor masks and reticles is disclosed, utilizing a focused ion beam system capable of delivering, from a single ion beam column, several different species of focused ion beams, each of which is individually optimized to meet the differing requirements of the major functions to be performed in mask repair. This method allows the mask to be imaged with high resolution and minimum mask damage. Opaque defects are removed by sputter etching at high rates with minimum damage to the mask substrate, and clear defects are filled in at high rates directly from the beam by deposition of a metallic or other substance compatible with the mask materials. A focused ion beam column able to produce precisely focused ion beams is employed and is operated at high energies for imaging and sputter etching, and at low energies for imaging and deposition. A liquid metal alloy source containing suitable atomic species is employed.