Nikhil Bahubali Prasanna Kumar

US Patent:

20220244583, Aug 4, 2022

Filed:

Apr 18, 2022

Appl. No.:

17/723295

Inventors:

- Palo Alto CA, US
Nikhil KUMAR - Burlingame CA, US

International Classification:

G02F 1/035
G02B 6/122
G02B 6/13
G02F 1/05
G02F 1/00

Abstract:

An electro-optical device is fabricated on a semiconductor-on-insulator (SOI) substrate. The electro-optical device comprises a silicon dioxide layer, and an active layer having ferroelectric properties on the silicon dioxide layer. The silicon dioxide layer includes a first silicon dioxide layer of the SOI substrate and a second silicon dioxide layer converted from a silicon layer of the SOI substrate. The active layer includes a buffer layer epitaxially grown on the silicon layer of the SOI substrate and a ferroelectric layer epitaxially grown on the buffer layer. The electro-optical device further comprises one or more additional layers over the active layer, and first and second contacts to the active layer through at least one of the one or more additional layers. Methods of fabricating the electro-optical device are also described herein.

US Patent:

20230047258, Feb 16, 2023

Filed:

Apr 25, 2022

Appl. No.:

17/728890

Inventors:

- Palo Alto CA, US
Nikhil KUMAR - Burlingame CA, US
Gary GIBSON - Palo Alto CA, US

International Classification:

G02F 1/313
G02B 6/35
G02B 6/12

Abstract:

An optical switch device includes a first semiconductor structure configured to operate as a first waveguide and a second semiconductor structure configured to operate as a second waveguide. The second semiconductor structure is located above or below the first semiconductor structure and separated from the first semiconductor structure. The second semiconductor structure includes a first portion having a first width and a second portion having a width different from the first width and located on the first portion. The first portion is located between a first doped region and a second doped region.

US Patent:

20230038722, Feb 9, 2023

Filed:

Aug 6, 2021

Appl. No.:

17/444638

Inventors:

- Redwood City CA, US
Nikhil Kumar - Fremont CA, US

International Classification:

B60L 53/66
B60L 53/36
B60L 53/30
B60W 30/06
G05D 1/00
H04W 4/40
H04W 4/80

Abstract:

A vehicle includes a charging port for connection to a charging cable capable of delivering electricity to the vehicle, and an ultra-wide band (UWB) transceiver module. The UWB transceiver module includes a master node and at least three antenna nodes. The at least three antenna nodes are deployed at correspondingly diverse locations in the vehicle at fixed distances from the charging port. The master node is configured to determine a position of an UWB antenna or tag external to the vehicle relative to the locations of the at least three antenna nodes and the charging port.

US Patent:

20210278595, Sep 9, 2021

Filed:

Mar 1, 2021

Appl. No.:

17/189050

Inventors:

- Palo Alto CA, US
Nikhil Kumar - Palo Alto CA, US

International Classification:

G02B 6/293
G02B 6/036
G02B 6/132

Abstract:

Electro-optical devices and methods for constructing electro-optical devices such as a switch or phase shifter. An electrode layer is deposited on a substrate layer, a waveguide structure is deposited on the electrode layer, a first cladding layer is deposited on the waveguide structure, and the first cladding layer is planarized and bonded to a wafer. The substrate layer is removed and the electrode layer is etched to split the electrode layer into a first electrode separated from a second electrode. A second cladding layer is deposited on the etched electrode layer. The first and second electrodes may be composed of a material with a large dielectric constant, or they may be composed of a material with a large electron mobility. The device may exhibit a sandwich waveguide architecture where an electro-optic layer is disposed between two strip waveguides.

US Patent:

20210278708, Sep 9, 2021

Filed:

Mar 1, 2021

Appl. No.:

17/189032

Inventors:

- Palo Alto CA, US
Nikhil Kumar - Palo Alto CA, US

International Classification:

G02F 1/035

Abstract:

Electro-optical devices and methods for constructing electro-optical devices such as a switch or phase shifter. An electrode layer is deposited on a substrate layer, a waveguide structure is deposited on the electrode layer, a first cladding layer is deposited on the waveguide structure, and the first cladding layer is planarized and bonded to a wafer. The substrate layer is removed and the electrode layer is etched to split the electrode layer into a first electrode separated from a second electrode. A second cladding layer is deposited on the etched electrode layer. The first and second electrodes may be composed of a material with a large dielectric constant, or they may be composed of a material with a large electron mobility. The device may exhibit a sandwich waveguide architecture where an electro-optic layer is disposed between two strip waveguides.

US Patent:

20210278738, Sep 9, 2021

Filed:

Mar 1, 2021

Appl. No.:

17/189025

Inventors:

- Palo Alto CA, US
Nikhil Kumar - Palo Alto CA, US

International Classification:

G02F 1/225
G02F 1/21

Abstract:

Electro-optical devices and methods for constructing electro-optical devices such as a switch or phase shifter. An electrode layer is deposited on a substrate layer, a waveguide structure is deposited on the electrode layer, a first cladding layer is deposited on the waveguide structure, and the first cladding layer is planarized and bonded to a wafer. The substrate layer is removed and the electrode layer is etched to split the electrode layer into a first electrode separated from a second electrode. A second cladding layer is deposited on the etched electrode layer. The first and second electrodes may be composed of a material with a large dielectric constant, or they may be composed of a material with a large electron mobility. The device may exhibit a sandwich waveguide architecture where an electro-optic layer is disposed between two strip waveguides.

US Patent:

20210116640, Apr 22, 2021

Filed:

Aug 5, 2020

Appl. No.:

16/985860

Inventors:

- Albuquerque NM, US
Damien Lambert - Los Altos CA, US
Nikhil Kumar - Albuquerque NM, US

International Classification:

G02B 6/14
G02B 6/122
G02B 6/132
G02B 6/136
G02B 6/30

Abstract:

A waveguide mode expander couples a smaller optical mode in a semiconductor waveguide to a larger optical mode in an optical fiber. The waveguide mode expander comprises a shoulder and a ridge. In some embodiments, the ridge of the waveguide mode expander has a plurality of stages, the plurality of stages having different widths at a given cross section.

US Patent:

20210003903, Jan 7, 2021

Filed:

Jul 28, 2020

Appl. No.:

16/941355

Inventors:

- Palo Alto CA, US
Nikhil KUMAR - Burlingame CA, US
Gary GIBSON - Palo Alto CA, US

International Classification:

G02F 1/313
G02B 6/35
G02B 6/12

Abstract:

An optical switch device includes a first semiconductor structure configured to operate as a first waveguide and a second semiconductor structure configured to operate as a second waveguide. The second semiconductor structure is located above or below the first semiconductor structure and separated from the first semiconductor structure. The second semiconductor structure includes a first portion having a first width and a second portion having a width different from the first width and located on the first portion. The first portion is located between a first doped region and a second doped region.