Morton B Panish

US Patent:

49391020, Jul 3, 1990

Filed:

Jan 17, 1989

Appl. No.:

7/297716

Inventors:

Robert A. Hamm - Staten Island NY
Roger J. Malik - Summit NJ
Morton B. Panish - Springfield NJ
John F. Walker - Westfield NJ

Assignee:

American Telephone and Telegraph Company - New York NY

International Classification:

H01L 21203

US Classification:

437107

Abstract:

36 We have discovered the III-V semiconductor layers with previously unattainably high effective hole concentrations can be produced by molecular growth processes (e. g. MBE) if an amphoteric dopant such as Be is used and if, during the growth of the highly doped III-V layer, the substrate is maintained at a temperature T. sub. g that is substantially lower than customarily used. For instance, a InGaAs layer with effective hole concentration 1. times. 10. sup. 20 cm. sup. -3 was grown at T. sub. g =450. degree. C. , and a GaAs layer with effective hole concentration of 1. times. 10. sup. 20 cm. sup. -3 was grown at T. sub. g of 475. degree. C. The heavily doped III-V layers can be of device grade and can usefully be part of electronic devices such as high speed bipolar transistors.

US Patent:

39740021, Aug 10, 1976

Filed:

Jun 10, 1974

Appl. No.:

5/477975

Inventors:

Horace Craig Casey - Summit NJ
Alfred Yi Cho - New Providence NJ
Morton B. Panish - Springfield NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

H01L 736

US Classification:

148175

Abstract:

In the fabrication of double heterostructure GaAsAlGaAs junction lasers by molecular beam epitaxy, it has been found that suitably annealing the entire heterostructure increases the external quantum efficiency of the laser and reduces the room temperature threshold for lasing. Also described is a technique using relatively uncollimated beams to deposit continuously on the interior walls of the vacuum chamber fresh layers which getter deleterious contaminants. In addition, pyrolytic boron nitride, rather than graphite, effusion cells are utilized in order to reduce the amount of CO formation in the system.

US Patent:

51067641, Apr 21, 1992

Filed:

Nov 30, 1989

Appl. No.:

7/444579

Inventors:

Lloyd R. Harriott - Somerville NJ
Morton B. Panish - Springfield NJ
Henryk Temkin - Berkeley Heights NJ
Yuh-Lin Wang - North Plainfield NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 21302

US Classification:

437 18

Abstract:

Fine featured devices are produced by a series of fabrication steps including exposing selective surface regions to irradiation, e. g. to an ion beam, generally to result in removal of masking material within irradiated regions. In most instances, subsequent etching is under conditions such that bared material is preferentially removed. Etch-removal and irradiation are such that overgrown material is of device quality at least in etched regions. The inventive process is of particular value in the fabrication of integrated circuits, e. g. circuits performing electronic and/or optical functions. The inventive process is expediently used in the fabrication of structures having minimum feature size of 1 micrometer and smaller. Patterning is dependent upon masking material of a maximum thickness of 100. ANG.

US Patent:

43303609, May 18, 1982

Filed:

Jul 21, 1980

Appl. No.:

6/170548

Inventors:

Glenn D. Kubiak - Palo Alto CA
Morton B. Panish - Springfield NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

C30B 2306

US Classification:

156610

Abstract:

The invention is a method and apparatus for growing group III-V semiconductor layers by molecular beam deposition in which a gaseous source is used to form a molecular beam comprising M. sub. 2 or M. sub. 4 molecules, where M is a group V element. Arsine and phosphine may be decomposed in a high temperature leak-source to provide As. sub. 2 and P. sub. 2 molecular beams for molecular beam epitaxy of group III-V semiconductors such as GaAs and InP.

US Patent:

41841719, Jan 15, 1980

Filed:

Jul 5, 1978

Appl. No.:

5/921983

Inventors:

Morton B. Panish - Springfield NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

H01S 3319
H01L 3300

US Classification:

357 18

Abstract:

A semiconductor double heterostructure (DH) laser or spontaneous emitting diode is described which emits radiation in the infrared region of the spectrum from about 3. 5 to 5. 5 micrometers. The DH structure comprises a Group III-V lattice-matched system, in particular, Al. sub. y Ga. sub. 1-y Sb--InAs. sub. x Sb. sub. 1-x where 0. ltoreq. y. gtoreq. 1 and 0. 82. ltoreq. times. ltoreq. 91, approximately.

US Patent:

39582639, May 18, 1976

Filed:

Apr 25, 1974

Appl. No.:

5/463871

Inventors:

Morton B. Panish - Springfield NJ
George Arthur Rozgonyi - Chatham NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

H01S 3319
H01L 29161
H01L 29205

US Classification:

357 18

Abstract:

The average stress between contiguous layers of Al. sub. x Ga. sub. 1. sub. -x As and Al. sub. y Ga. sub. 1. sub. -y As (y > x) is reduced by the addition of phosphorus during the growth of the latter layer to produce the quaternary Al. sub. y Ga. sub. 1. sub. -y As. sub. 1. sub. -z P. sub. z instead of the ternary Al. sub. y Ga. sub. 1. sub. -y As. In order to reduce the average stress to less than about 2. times. 10. sup. 8 dynes/cm. sup. 2 the amount of phosphorus added should satisfy the condition: ##EQU1## Also described is a double heterostructure junction laser comprising a GaAs or AlGaAs active layer sandwiched between layers of AlGaAsP.

US Patent:

52065243, Apr 27, 1993

Filed:

Jun 20, 1991

Appl. No.:

7/721913

Inventors:

Anthony F. J. Levi - Summit NJ
Richard N. Nottenburg - New York NY
Morton Panish - Springfield NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 2972

US Classification:

257 29

Abstract:

Improved heterojunction bipolar transistor (HBT) are disclosed. Inventive devices can attain high cut-off frequency (f. sub. T), exemplarily 80 GHz or higher, and high DC current gain (. beta. ), exemplarily 25 or higher. The devices exhibit lateral scaling, permitting reduction in emitter stripe width without unacceptable decrease in. beta. Exemplarily the stripe width is 1. mu. m or less. The inventive HBTs are hot electron devices, with the hot electrons in the base region being spatially confined such that relatively few electrons reach the surface of the extrinsic base region. The relatively low bulk and surface recombination rate in the base of inventive HBTs is an important aspect of the invention and makes possible devices having relatively high. beta. and low power consumption. Appropriate choice of base material, namely, a semiconductor material having relatively low intrinsic surface recombination velocity, can result in further reduction of surface recombination, as can, for instance, the use of an appropriate non-alloyed metal base contact.

US Patent:

48973610, Jan 30, 1990

Filed:

Dec 14, 1987

Appl. No.:

7/132757

Inventors:

Lloyd R. Harriott - Hillsborough Township, Somerset County NJ
Morton B. Panish - Springfield NJ
Henryk Temkin - Berkeley Heights NJ

Assignee:

American Telephone & Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 21265
H01L 2120

US Classification:

437 24

Abstract:

When high-vacuum methods are used in the manufacture of miniaturized devices such as, e. g. , semiconductor integrated-circuit devices, device layers on a substrate are preferably patterned without breaking of the vacuum. Preferred patterning involves deposition of a semiconductor mask layer, generation of the pattern in the mask layer by ion deflected-beam writing, and transfer of the pattern by dry etching. When the mask layer is an epitaxial layer, further epitaxial layer deposition after patterning may proceed without removal of remaining mask layer material.