Mohith E Verghese

US Patent:

7118779, Oct 10, 2006

Filed:

May 7, 2004

Appl. No.:

10/841585

Inventors:

Mohith Verghese - Phoenix AZ, US
Eric J. Shero - Phoenix AZ, US

Assignee:

ASM America, Inc. - Phoenix AZ

International Classification:

B05D 7/22

US Classification:

427230, 427237, 4272481, 42725523, 42725526, 42725527

Abstract:

Protective layers are formed on a surface of an atomic layer deposition (ALD) or chemical vapor deposition (CVD) reactor. Parts defining a reaction space for an ALD or CVD reactor can be treated, in situ or ex situ, with chemicals that deactivate reactive sites on the reaction space surface(s). A pre-treatment step can maximize the available reactive sites prior to the treatment step. With reactive sites deactivated by adsorbed treatment reactant, during subsequent processing the reactant gases have reduced reactivity or deposition upon these treated surfaces. Accordingly, purge steps can be greatly shortened and a greater number of runs can be conducted between cleaning steps to remove built-up deposition on the reactor walls.

US Patent:

7601225, Oct 13, 2009

Filed:

Jun 16, 2003

Appl. No.:

10/463309

Inventors:

Marko Tuominen - Helsinki, FI
Eric Shero - Phoenix AZ, US
Mohith Verghese - Phoenix AZ, US

Assignee:

ASM International N.V.

International Classification:

C23C 16/455
C23F 1/00
H01L 21/306
C23C 16/06
C23C 16/22

US Classification:

118726, 15634529

Abstract:

An apparatus and method improves heating of a solid precursor inside a sublimation vessel. In one embodiment, inert, thermally conductive elements are interspersed among units of solid precursor. For example the thermally conductive elements can comprise a powder, beads, rods, fibers, etc. In one arrangement, microwave energy can directly heat the thermally conductive elements.

US Patent:

D614153, Apr 20, 2010

Filed:

Apr 6, 2009

Appl. No.:

29/334984

Inventors:

Kyle Fondurulia - Phoenix AZ, US
Eric J Shero - Phoenix AZ, US
Mohith Verghese - Phoenix AZ, US
Carl L White - Gilbert AZ, US

Assignee:

ASM America, Inc. - Phoenix AZ

International Classification:

1303

US Classification:

D13182, D23366

US Patent:

7799135, Sep 21, 2010

Filed:

Oct 6, 2006

Appl. No.:

11/539312

Inventors:

Mohith Verghese - Phoenix AZ, US
Eric J. Shero - Phoenix AZ, US

Assignee:

ASM America, Inc. - Phoenix AZ

International Classification:

C23C 16/00

US Classification:

118715

Abstract:

Protective layers are formed on a surface of an atomic layer deposition (ALD) or chemical vapor deposition (CVD) reactor. Parts defining a reaction space for an ALD or CVD reactor can be treated, in situ or ex situ, with chemicals that deactivate reactive sites on the reaction space surface(s). A pre-treatment step can maximize the available reactive sites prior to the treatment step. With reactive sites deactivated by adsorbed treatment reactant, during subsequent processing the reactant gases have reduced reactivity or deposition upon these treated surfaces. Accordingly, purge steps can be greatly shortened and a greater number of runs can be conducted between cleaning steps to remove built-up deposition on the reactor walls.

US Patent:

7851019, Dec 14, 2010

Filed:

Jul 10, 2008

Appl. No.:

12/170801

Inventors:

Marko Tuominen - Helsinki, FI
Eric Shero - Phoenix AZ, US
Mohith Verghese - Phoenix AZ, US

Assignee:

ASM International N.V. - Bilthovenm

International Classification:

C23C 16/00

US Classification:

42725523, 4272481, 118726, 118727, 392342, 392386, 392388, 422243

Abstract:

An apparatus and method improves heating of a solid precursor inside a sublimation vessel. In one embodiment, inert, thermally conductive elements are interspersed among units of solid precursor. For example the thermally conductive elements can comprise a powder, beads, rods, fibers, etc. In one arrangement, microwave energy can directly heat the thermally conductive elements.

US Patent:

7914847, Mar 29, 2011

Filed:

Nov 30, 2006

Appl. No.:

11/565478

Inventors:

Mohith Verghese - Phoenix AZ, US
Eric J. Shero - Phoenix AZ, US

Assignee:

ASM America, Inc. - Phoenix AZ

International Classification:

B05D 7/22

US Classification:

427230, 117 84

Abstract:

Protective layers are formed on a surface of an atomic layer deposition (ALD) or chemical vapor deposition (CVD) reactor. Parts defining a reaction space for an ALD or CVD reactor can be treated, in situ or ex situ, with chemicals that deactivate reactive sites on the reaction space surface(s). A pre-treatment step can maximize the available reactive sites prior to the treatment step. With reactive sites deactivated by adsorbed treatment reactant, during subsequent processing the reactant gases have reduced reactivity or deposition upon these treated surfaces. Accordingly, purge steps can be greatly shortened and a greater number of runs can be conducted between cleaning steps to remove built-up deposition on the reactor walls.

US Patent:

8137462, Mar 20, 2012

Filed:

Oct 10, 2007

Appl. No.:

11/870374

Inventors:

Kyle Fondurulia - Phoenix AZ, US
Eric Shero - Phoenix AZ, US
Mohith E Verghese - Phoenix AZ, US
Carl L White - Gilbert AZ, US

Assignee:

ASM America, Inc. - Phoenix AZ

International Classification:

C23C 16/00
C23C 16/455
C23C 16/448

US Classification:

118715, 118724, 118726

Abstract:

A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10. 0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.

US Patent:

8152922, Apr 10, 2012

Filed:

Aug 30, 2004

Appl. No.:

10/929348

Inventors:

Ryan M. Schmidt - Mesa AZ, US
Mohith Verghese - Phoenix AZ, US

Assignee:

ASM America, Inc. - Pheonix AZ

International Classification:

C23C 16/455
C23C 16/54
C23F 1/00
H01L 21/306
C23C 16/06
C23C 16/22

US Classification:

118715, 15634533, 15634534

Abstract:

A system and method for mixing a plurality of gases for an atomic layer deposition (ALD) reactor. The mixer is configured to mix the plurality of gases while minimizing the potential for re-circulation within the mixer. The mixer is further configured to maintain the flow velocity of the plurality of gases as the gases pass through the mixer.