Ming E He

Author:

Ming Fang He

ISBN #:

0807738492

US Patent:

20050287906, Dec 29, 2005

Filed:

Jan 17, 2004

Appl. No.:

10/759649

Inventors:

Ming He - Brooklyn NY, US

International Classification:

A63H033/08

US Classification:

446109000

Abstract:

A new invented molding board, which is multi-functioned and can be used to create different kinds of objects. This molding board has teeth and holes and they help to lock the jointed boards together. The molding boards can join with each other or join itself. The molding board can be removed and re-fixed. The angel between two boards is adjustable. The molding board accepts appendixes. An object can be made by a few pieces molding boards or just one. The boards or the unit can be jointed to each other to form a larger combined system. The objects formed by the said molding board can be folded under certain joint. They may be enlarged or reduced. The molding board is multi-functioned. It can be used to make model, furniture, toy or teaching, daily life, civil engineering, amusement and practical purposes.

US Patent:

20140353805, Dec 4, 2014

Filed:

May 28, 2013

Appl. No.:

13/903618

Inventors:

- Grand Cayman, KY
Moosung M. CHAE - Englewood Cliffs NJ, US
Larry ZHAO - Niskayuna NY, US
Kunaljeet TANWAR - Slingerlands NY, US
Nicholas Vincent LICAUSI - Watervliet NY, US
Christian WITT - Woodbridge CT, US
Ailian ZHAO - Slingerlands NY, US
Ming HE - Slingerlands NY, US
Sean X. LIN - Watervliet NY, US
Xunyuan ZHANG - Albany NY, US

Assignee:

GLOBALFOUNDRIES Inc. - Grand Cayman

International Classification:

H01L 21/3105
H01L 23/00

US Classification:

257632, 438476

Abstract:

A process is provided for the removal of contaminants from a semiconductor device, for example, removing contaminants from pores of an ultra-low k film. In one aspect, a method includes: providing a dielectric layer with contaminant-containing pores and exposing the dielectric layer to a supercritical fluid. The supercritical fluid can dissolve and remove the contaminants. In another aspect, an intermediate semiconductor device structure is provided that contains a dielectric layer with contaminant-containing pores and a supercritical fluid within the pores. In another aspect, a semiconductor device structure with a dielectric layer containing uncontaminated pores is provided.