Michael J Cangemi

US Patent:

7049034, May 23, 2006

Filed:

Sep 9, 2003

Appl. No.:

10/658039

Inventors:

Patrick M. Martin - Dallas TX, US
Matthew Lassiter - Allen TX, US
Darren Taylor - Allen TX, US
Michael Cangemi - McKinney TX, US
Eric Poortinga - Allen TX, US

Assignee:

Photronics, Inc. - Brookfield CT

International Classification:

G01F 9/00

US Classification:

430 5

Abstract:

The present invention generally relates, to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes an internal etch stop layer and either a deposited substantially transparent layer, deposited partially transparent layer or deposited opaque thereon in an otherwise conventional photomask. The photomask of the present invention is used to make semiconductor devices or integrated circuits. In a preferred embodiment of the present invention is directed to an aaPSM comprising: a patterned opaque layer with a first set of at least one light transmitting openings and a second set of at least one light transmitting openings; a deposited substantially transparent layer underlying the opaque layer wherein the deposited substantially transparent layer has corresponding light transmitting openings to each of the openings of the first set of at least one light transmitting openings, a substantially transparent etch stop layer underlying the deposited substantially transparent layer, and a substantially transparent substrate underlying the transparent etch stop layer. In a preferred embodiment, the internal substantially transparent etch stop layer of the present invention is comprised of MgFand even more particularly may be comprised of MgFdeposited under evaporation. Other materials that may be used for the substantially transparent etch stop layer of the present invention include but are not limited to AlOand AlN.

US Patent:

8169705, May 1, 2012

Filed:

Nov 25, 2008

Appl. No.:

12/277596

Inventors:

Michael J Cangemi - Victor NY, US
Horst Schreiber - Rochester NY, US
Jue Wang - Fairport NY, US

Assignee:

Corning Incorporated - Corning NY

International Classification:

G02B 1/10

US Classification:

359586

Abstract:

The invention is directed to optical elements that are coated with dense homogeneous fluoride films and to a method of making such coated elements. The coatings materials are a high (“H”) refractive index fluoride material and a low (“L”) refractive index material that are co-evaporated to form a coating layer of a L-H coating material (a co-deposited coating of L and H materials). Lanthanide metal fluorides (for example, neodymium, lanthanum, dysprosium, yttrium and gadolinium, and combinations thereof) are preferred metal fluorides for use as the high refractive index materials with lanthanum fluoride (LaF) and gadolinium fluoride (GdF) being particularly preferred. Aluminum fluoride (AlF) and alkaline earth metal fluorides (fluorides of calcium, magnesium, barium and strontium) are the preferred low refractive index materials, with magnesium fluoride (MgF) being a preferred alkaline earth metal fluoride.

US Patent:

8399110, Mar 19, 2013

Filed:

May 29, 2008

Appl. No.:

12/156429

Inventors:

Michael J Cangemi - Victor NY, US
Horst Schreiber - Rochester NY, US
Jue Wang - Fairport NY, US

Assignee:

Corning Incorporated - Corning NY

International Classification:

B32B 15/04
C23C 14/06

US Classification:

428702, 428689, 428699, 428701, 428410, 2041921, 20419211

Abstract:

The invention is directed to single crystal alkaline earth metal fluoride optical elements having an adhesive, hermetic coating thereon, the coating being chemically bonded to the surface of the metal fluoride optical element with a bonding energy ≧4 eV and not merely bonded by van der Walls forces. The materials that can be used for coating the optical elements are selected from the group consisting of SiO, F—SiO, AlO, F—AlO, SiON, HfO, SiN, TiOand ZrO, and mixtures (of any composition) of the foregoing, for example, SiO; HfOand F—SiO/ZrO. The preferred alkali earth metal fluoride used for the optical elements is CaF. Preferred coatings are SiO, F—SiO, SiO/ZrOand F—SiO/ZrO.

US Patent:

20040043303, Mar 4, 2004

Filed:

Aug 27, 2002

Appl. No.:

10/229830

Inventors:

Matthew Lassiter - McKinney TX, US
Michael Cangemi - McKinney TX, US

International Classification:

G03F001/08
G03F007/11
G03F007/20
G03F007/40

US Classification:

430/005000, 430/271100, 430/275100, 430/313000

Abstract:

The present invention relates generally to improved photomask blanks used in photolithography for the manufacture of integrated circuits and other semiconductor devices, and more specifically, to the detection of defects in such photomasks after processing. In particular, the present invention is directed to a photomask blank having one or more intermediate layers made from materials having a higher extinction coefficient at the inspection tool wavelength than exposure tool wavelengths. The intermediate layer(s) are made from materials that absorb a sufficient amount of light to meet the optical requirements of inspection tools while at the same time transmit a sufficient amount of light to meet the optical requirements of exposure tools. As a result, the photomask improves inspection results of a photomask without sacrificing transmission properties during the semiconductor writing process.

US Patent:

20050026053, Feb 3, 2005

Filed:

Sep 8, 2004

Appl. No.:

10/936026

Inventors:

Patrick Martin - Dallas TX, US
Matthew Lassiter - McKinney TX, US
Darren Taylor - The Colony TX, US
Michael Cangemi - McKinney TX, US
Eric Poortinga - Austin TX, US

International Classification:

B32B009/00
B32B015/00
B32B017/06
G03F009/00

US Classification:

430005000, 428428000, 428432000

Abstract:

The present invention generally relates to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes an internal etch stop layer and either a deposited substantially transparent layer, deposited partially transparent layer or deposited opaque thereon in an otherwise conventional photomask. The photomask of the present invention is used to make semiconductor devices or integrated circuits. In a preferred embodiment of the present invention is directed to an aaPSM comprising: a patterned opaque layer with a first set of at least one light transmitting openings and a second set of at least one light transmitting openings; a deposited substantially transparent layer underlying the opaque layer wherein the deposited substantially transparent layer has corresponding light transmitting openings to each of the openings of the first set of at least one light transmitting openings, a substantially transparent etch stop layer underlying the deposited substantially transparent layer, and a substantially transparent substrate underlying the transparent etch stop layer. In a preferred embodiment, the internal substantially transparent etch stop layer of the present invention is comprised of MgFand even more particularly may be comprised of MgFdeposited under evaporation. Other materials that may be used for the substantially transparent etch stop layer of the present invention include but are not limited to AlOand AlN.

US Patent:

20130321922, Dec 5, 2013

Filed:

Mar 15, 2013

Appl. No.:

13/834008

Inventors:

Michael Jerome Cangemi - Canandaigua NY, US
Paul Gerard Dewa - Newark NY, US
Joseph D. Malach - Newark NY, US
Paul Francis Michaloski - Rochester NY, US
Horst Schreiber - Corning NY, US
Jue Wang - Fairport NY, US

Assignee:

Corning Incorporated - Corning NY

International Classification:

G02B 1/11
G02B 1/10

US Classification:

359585, 427535, 427579

Abstract:

The disclosure is directed to a coating consisting of a binary metal fluoride coating consisting a high refractive index metal fluoride layer on top of a substrate, a low refractive index metal fluoride layer on top of the high refractive index layer and layer of SiOor F—SiOcontaining 0.2 wt % to 4.5 (2000 ppm to 45,000 ppm) F on top of the low refractive index layer. In one embodiment the F content of F—SiOis in the range of 5000 ppm to 10,000 ppm F. The high index and low index materials are each deposited to a thickness of less than or equal to 0.9 quarter wave, and the capping material is deposited to a thickness in the range of 5 nm to 25 nm. The disclosure is also directed to optical elements having the foregoing coating and a method of making the coating.

Author:

Michael P. Cangemi

ISBN #:

0471012556

Author:

Michael P. Cangemi

ISBN #:

0471281190

Author:

Michael P. Cangemi

ISBN #:

0471383341