Abstract:
A memory cell includes a pair of spaced apart conductors on an insulating layer, and a novel electrically alterable resistive component between the conductors. This resistive component consists essentially of a single element semiconductor selected from the group of Si, Ge, C, and. alpha. -Sn, having a crystalline grain size which is smaller than polycrystalline. Dopant atoms in the semiconductor are limited to be less than 10. sup. 17 atoms/CM. sup. 3 ; and, such a doping range includes zero doping. All dopant atoms are interstitial in the semiconductor crystals and not substitutional.