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Mehran A Matloubian

age ~63

from Encino, CA

Also known as:
  • Morris Matloubian
  • Mishel Matloubian
  • Mehr Matloubian
  • Matloubian Mehran
Phone and address:
4813 Gloria Ave, Van Nuys, CA 91436
818 789-2588

Mehran Matloubian Phones & Addresses

  • 4813 Gloria Ave, Encino, CA 91436 • 818 789-2588 • 818 995-3287
  • 4149 Regal Oak Dr, Encino, CA 91436 • 818 986-0086 • 818 419-6181
  • Van Nuys, CA
  • 12545 Gilmore St, North Hollywood, CA 91606
  • 1138 Bedford St, Los Angeles, CA 90035
  • Encinitas, CA
  • 4813 Gloria Ave, Encino, CA 91436 • 818 317-5903

Work

  • Position:
    Executive, Administrative, and Managerial Occupations

Education

  • Degree:
    High school graduate or higher

Emails

Industries

Venture Capital & Private Equity
Name / Title
Company / Classification
Phones & Addresses
Mehran Matloubian
President
TOPANGA TECHNOLOGIES, INC
Mfg Electric Lamps
21212 Van Owen St, Canoga Park, CA 91303
818 347-1200

Us Patents

  • Microelectromechanical Rf And Microwave Frequency Power Limiter And Electrostatic Device Protection

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  • US Patent:
    6504447, Jan 7, 2003
  • Filed:
    Oct 30, 1999
  • Appl. No.:
    09/431308
  • Inventors:
    David Laney - San Diego CA
    Mehran Matloubian - Encino CA
    Lawrence Larson - Del Mar CA
  • Assignee:
    HRL Laboratories, LLC - Malibu CA
  • International Classification:
    H03G 1104
  • US Classification:
    333 172, 333262, 200181
  • Abstract:
    The present invention provides a flexible mechanical bridge over a microstrip on a substrate, which utilizes an electromagnetic field increase, as generated by temporary power surge to shunt harmful power away from a MMIC system. The invention includes a power limiter which includes an airbridge , preferably in the form of an electrically conductive strip with ground contacts and formed thereon. The ground contacts and are electrically connected, through via holes and respectively, to a metallization layer formed on the bottom side of a substrate. The air bridge is designed such that it traverses an electrically conductive microstrip forming an air gap between the air bridge and the electrically conductive microstrip. When there is a power surge the air bridge , will flex to cause an electrical connection with the microstrip , thereby directing the unwanted signal through the ground contacts and and the via holes and to the metallization layer.
  • Monolithic Temperature Compensation Scheme For Field Effect Transistor Integrated Circuits

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  • US Patent:
    6548840, Apr 15, 2003
  • Filed:
    Apr 3, 2000
  • Appl. No.:
    09/542241
  • Inventors:
    Carl W. Pobanz - Topanga CA
    Mehran M. Matloubian - Encino CA
  • Assignee:
    HRL Laboratories, LLC - Malibu CA
  • International Classification:
    H01L 2714
  • US Classification:
    257252, 257379, 257469
  • Abstract:
    A method and apparatus for substantially canceling the effects of temperature on the electrical performance of Field Effect Transistor (FET) integrated circuits (ICs) by exploiting a subtle feature of an epitaxial resistor implemented in an FET process. Specifically, the invention takes advantage of two constituent epitaxial resistor components having resistances that vary monotonically in opposite directions as functions of temperature. The invention includes a method for selecting the geometry of such an epitaxial resistor to give it either temperature invariance or a specific, useful functional temperature dependence.
  • Inp Collector Ingaassb Base Dhbt Device And Method Of Forming Same

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  • US Patent:
    6670653, Dec 30, 2003
  • Filed:
    Jul 30, 1999
  • Appl. No.:
    09/364730
  • Inventors:
    Miroslav Micovic - Newbury Park CA
    Daniel P. Docter - Santa Monica CA
    Mehran Matloubian - Encino CA
  • Assignee:
    HRL Laboratories, LLC - Malibu CA
  • International Classification:
    H01L 21331
  • US Classification:
    257197, 257198, 257191, 257201, 257 15, 257 22
  • Abstract:
    A Double Heterojunction Bipolar Transistor (DHBT) is disclosed employing a collector of InP, an emitter of InP or other material such as InAlAs, and a base of either a selected In Ga As Sb compound, which preferably is lattice-matched to InP or may be somewhat compressively strained thereto, or of a superlattice which mimics the selected InGaAsSb compound. When an emitter having a conduction band non-aligned with that of the base is used, such as InAlAs, the base-emitter junction is preferably graded using either continuous or stepped changes in bulk material, or using a chirped superlattice. Doping of the junction may include one or more delta doping layer to improve the shift of conduction band discontinuities provided by a grading layer, or to permit a wider depletion region.
  • Millimeter Wave Imaging Array

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  • US Patent:
    6828556, Dec 7, 2004
  • Filed:
    Sep 26, 2002
  • Appl. No.:
    10/256335
  • Inventors:
    Carl W. Pobanz - Rancho Palos Verdes CA
    Mehran Matloubian - Encino CA
    Peter D. Brewer - Westlake Village CA
  • Assignee:
    HRL Laboratories, LLC - Malibu CA
  • International Classification:
    H01Q 2100
  • US Classification:
    2503361, 343700 MS
  • Abstract:
    A focal plane array for millimeter wave imaging comprising a three dimensional stack of antenna elements and radiometer microwave monolithic integrated circuits (MMICs) embedded in polymer dielectric layers built on top of a silicon substrate. Each radiometer MMIC and antenna element comprise a radiometer pixel. The silicon substrate contains integrated circuits to collect and process the signals from each radiometer pixel and generate a full-frame video signal. The array can be fabricated on a single silicon wafer or can be constructed from structures fabricated on multiple silicon wafers.
  • Microelectromechanical Rf And Microwave Frequency Power Regulator

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  • US Patent:
    6847266, Jan 25, 2005
  • Filed:
    Jan 6, 2003
  • Appl. No.:
    10/337967
  • Inventors:
    David Laney - La Jolla CA, US
    Mehran Matloubian - Encino CA, US
    Lawrence Larson - Del Mar CA, US
  • Assignee:
    HRL Laboratories, LLC - Malibu CA
  • International Classification:
    H01P 124
  • US Classification:
    333 12, 333262
  • Abstract:
    Microelectromechanical RF and microwave frequency power limiter and electrostatic protection devices for use in high-speed circuits are presented. The devices utilize an airbridge or a cantilever arm including a contact pad positioned operatively adjacent to an electrically conductive and substantially planar transmission line. When the power level in the transmission line exceeds a particular threshold, the airbridge or cantilever arm yields due to force between the contact pad and the transmission line, directing undesired power away from active devices. This characteristic can either serve as a method by which to limit the amount of power passing through the transmission line to a determined value or as a method by which to protect devices along the transmission line from damage due to large electrostatic bursts.
  • Process For Assembling Three-Dimensional Systems On A Chip And Structure Thus Obtained

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  • US Patent:
    7253091, Aug 7, 2007
  • Filed:
    Sep 26, 2002
  • Appl. No.:
    10/256336
  • Inventors:
    Peter D. Brewer - Westlake Village CA, US
    Michael G. Case - Thousand Oaks CA, US
    Andrew T. Hunter - Woodland Hills CA, US
    Mehran Matloubian - Encino CA, US
    John A. Roth - Ventura CA, US
    Carl W. Pobanz - Rancho Palos Verdes CA, US
  • Assignee:
    HRL Laboratories, LLC - Malibu CA
  • International Classification:
    H01L 21/4763
    H01L 23/34
  • US Classification:
    438618, 438622, 438109, 438928, 438459, 257777, 257723, 257686, 257E21705
  • Abstract:
    A method for assembling an electronic system with a plurality of layers. Recesses in formed in one or more dielectric layers and electronic components are positioned within the recesses. One or more layers containing the components are placed on a host substrate containing host circuits. Electrical interconnects are provided between and among the electronic components in the dielectric layers and the host circuits. The layers containing the components may also be provided by growing the electronic devices on a growth substrate. The growth substrate is then removed after the layer is attached to the host substrate.
  • External Resonator/Cavity Electrode-Less Plasma Lamp And Method Of Exciting With Radio-Frequency Energy

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  • US Patent:
    7291985, Nov 6, 2007
  • Filed:
    Oct 4, 2006
  • Appl. No.:
    11/543736
  • Inventors:
    Frederick M. Espiau - Topanga CA, US
    Mehran Matloubian - Encino CA, US
  • Assignee:
    Topanga Technologies, Inc. - Topanga CA
  • International Classification:
    H05B 41/16
  • US Classification:
    315248, 315344, 315 3951, 31511121, 31323161, 31323171
  • Abstract:
    Described is a plasma electrode-less lamp. The device comprises an electromagnetic resonator and an electromagnetic radiation source conductively connected with the electromagnetic resonator. The device further comprises a pair of field probes, the field probes conductively connected with the electromagnetic resonator. A gas-fill vessel is formed from a closed, transparent body, forming a cavity. The gas-fill vessel is not contiguous with (detached from) the electromagnetic resonator and is capacitively coupled with the field probes. The gas-fill vessel further contains a gas within the cavity, whereby the gas is induced to emit light when electromagnetic radiation from the electromagnetic radiation source resonates inside the electromagnetic resonator, the electromagnetic resonator capacitively coupling the electromagnetic radiation to the gas, which becomes a plasma and emits light.
  • Electrode-Less Lamp With Base

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  • US Patent:
    D612093, Mar 16, 2010
  • Filed:
    May 15, 2009
  • Appl. No.:
    29/337185
  • Inventors:
    Frederick M. Espiau - Topanga CA, US
    Mehran Matloubian - Encino CA, US
  • Assignee:
    Topanga Technologies, Inc. - Canoga CA
  • International Classification:
    2603
  • US Classification:
    D26105

Resumes

Mehran Matloubian Photo 1

Mehran Matloubian

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Location:
Greater Los Angeles Area
Industry:
Venture Capital & Private Equity

Youtube

Mehran Sahami: On Struggling with Math

  • Duration:
    2m 40s

Lecture 9 | Programming Methodology (Stanford)

Lecture by Professor Mehran Sahami for the Stanford Computer Science D...

  • Duration:
    52m 26s

Mehran Sahami: On Job Rejection

  • Duration:
    5m 46s

Mehran Talebinejad on brain simulation for tr...

Carleton entrepreneur Mehran Talebinejad on brain simulation for treat...

  • Duration:
    42s

Mehran Sahami: On Struggling with Math HD

  • Duration:
    2m 34s

Stanford Swag Wagon with Professor Mehran Sah...

A bonus celebrity edition Stanford Swag Wagon episode featuring legend...

  • Duration:
    3m 14s

Flickr

Classmates

Mehran Matloubian Photo 10

Beverly Hills High School...

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Graduates:
Laura Kamins (1979-1983),
Mehran Matloubian (1977-1979),
Stephen Massman (1957-1961),
Arezoo Kashanian (1989-1999),
Pedram Youabian (1999-2003)

Facebook

Mehran Matloubian Photo 11

Mehran Matloubian

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Friends:
Shula Yomtov, June Kobayashi, Polly Preventza, Flora Wynn, Khandan Poureftekhar

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