Mehran A Matloubian

US Patent:

6504447, Jan 7, 2003

Filed:

Oct 30, 1999

Appl. No.:

09/431308

Inventors:

David Laney - San Diego CA
Mehran Matloubian - Encino CA
Lawrence Larson - Del Mar CA

Assignee:

HRL Laboratories, LLC - Malibu CA

International Classification:

H03G 1104

US Classification:

333 172, 333262, 200181

Abstract:

The present invention provides a flexible mechanical bridge over a microstrip on a substrate, which utilizes an electromagnetic field increase, as generated by temporary power surge to shunt harmful power away from a MMIC system. The invention includes a power limiter which includes an airbridge , preferably in the form of an electrically conductive strip with ground contacts and formed thereon. The ground contacts and are electrically connected, through via holes and respectively, to a metallization layer formed on the bottom side of a substrate. The air bridge is designed such that it traverses an electrically conductive microstrip forming an air gap between the air bridge and the electrically conductive microstrip. When there is a power surge the air bridge , will flex to cause an electrical connection with the microstrip , thereby directing the unwanted signal through the ground contacts and and the via holes and to the metallization layer.

US Patent:

6548840, Apr 15, 2003

Filed:

Apr 3, 2000

Appl. No.:

09/542241

Inventors:

Carl W. Pobanz - Topanga CA
Mehran M. Matloubian - Encino CA

Assignee:

HRL Laboratories, LLC - Malibu CA

International Classification:

H01L 2714

US Classification:

257252, 257379, 257469

Abstract:

A method and apparatus for substantially canceling the effects of temperature on the electrical performance of Field Effect Transistor (FET) integrated circuits (ICs) by exploiting a subtle feature of an epitaxial resistor implemented in an FET process. Specifically, the invention takes advantage of two constituent epitaxial resistor components having resistances that vary monotonically in opposite directions as functions of temperature. The invention includes a method for selecting the geometry of such an epitaxial resistor to give it either temperature invariance or a specific, useful functional temperature dependence.

US Patent:

6670653, Dec 30, 2003

Filed:

Jul 30, 1999

Appl. No.:

09/364730

Inventors:

Miroslav Micovic - Newbury Park CA
Daniel P. Docter - Santa Monica CA
Mehran Matloubian - Encino CA

Assignee:

HRL Laboratories, LLC - Malibu CA

International Classification:

H01L 21331

US Classification:

257197, 257198, 257191, 257201, 257 15, 257 22

Abstract:

A Double Heterojunction Bipolar Transistor (DHBT) is disclosed employing a collector of InP, an emitter of InP or other material such as InAlAs, and a base of either a selected In Ga As Sb compound, which preferably is lattice-matched to InP or may be somewhat compressively strained thereto, or of a superlattice which mimics the selected InGaAsSb compound. When an emitter having a conduction band non-aligned with that of the base is used, such as InAlAs, the base-emitter junction is preferably graded using either continuous or stepped changes in bulk material, or using a chirped superlattice. Doping of the junction may include one or more delta doping layer to improve the shift of conduction band discontinuities provided by a grading layer, or to permit a wider depletion region.

US Patent:

6828556, Dec 7, 2004

Filed:

Sep 26, 2002

Appl. No.:

10/256335

Inventors:

Carl W. Pobanz - Rancho Palos Verdes CA
Mehran Matloubian - Encino CA
Peter D. Brewer - Westlake Village CA

Assignee:

HRL Laboratories, LLC - Malibu CA

International Classification:

H01Q 2100

US Classification:

2503361, 343700 MS

Abstract:

A focal plane array for millimeter wave imaging comprising a three dimensional stack of antenna elements and radiometer microwave monolithic integrated circuits (MMICs) embedded in polymer dielectric layers built on top of a silicon substrate. Each radiometer MMIC and antenna element comprise a radiometer pixel. The silicon substrate contains integrated circuits to collect and process the signals from each radiometer pixel and generate a full-frame video signal. The array can be fabricated on a single silicon wafer or can be constructed from structures fabricated on multiple silicon wafers.

US Patent:

6847266, Jan 25, 2005

Filed:

Jan 6, 2003

Appl. No.:

10/337967

Inventors:

David Laney - La Jolla CA, US
Mehran Matloubian - Encino CA, US
Lawrence Larson - Del Mar CA, US

Assignee:

HRL Laboratories, LLC - Malibu CA

International Classification:

H01P 124

US Classification:

333 12, 333262

Abstract:

Microelectromechanical RF and microwave frequency power limiter and electrostatic protection devices for use in high-speed circuits are presented. The devices utilize an airbridge or a cantilever arm including a contact pad positioned operatively adjacent to an electrically conductive and substantially planar transmission line. When the power level in the transmission line exceeds a particular threshold, the airbridge or cantilever arm yields due to force between the contact pad and the transmission line, directing undesired power away from active devices. This characteristic can either serve as a method by which to limit the amount of power passing through the transmission line to a determined value or as a method by which to protect devices along the transmission line from damage due to large electrostatic bursts.

US Patent:

7253091, Aug 7, 2007

Filed:

Sep 26, 2002

Appl. No.:

10/256336

Inventors:

Peter D. Brewer - Westlake Village CA, US
Michael G. Case - Thousand Oaks CA, US
Andrew T. Hunter - Woodland Hills CA, US
Mehran Matloubian - Encino CA, US
John A. Roth - Ventura CA, US
Carl W. Pobanz - Rancho Palos Verdes CA, US

Assignee:

HRL Laboratories, LLC - Malibu CA

International Classification:

H01L 21/4763
H01L 23/34

US Classification:

438618, 438622, 438109, 438928, 438459, 257777, 257723, 257686, 257E21705

Abstract:

A method for assembling an electronic system with a plurality of layers. Recesses in formed in one or more dielectric layers and electronic components are positioned within the recesses. One or more layers containing the components are placed on a host substrate containing host circuits. Electrical interconnects are provided between and among the electronic components in the dielectric layers and the host circuits. The layers containing the components may also be provided by growing the electronic devices on a growth substrate. The growth substrate is then removed after the layer is attached to the host substrate.

US Patent:

7291985, Nov 6, 2007

Filed:

Oct 4, 2006

Appl. No.:

11/543736

Inventors:

Frederick M. Espiau - Topanga CA, US
Mehran Matloubian - Encino CA, US

Assignee:

Topanga Technologies, Inc. - Topanga CA

International Classification:

H05B 41/16

US Classification:

315248, 315344, 315 3951, 31511121, 31323161, 31323171

Abstract:

Described is a plasma electrode-less lamp. The device comprises an electromagnetic resonator and an electromagnetic radiation source conductively connected with the electromagnetic resonator. The device further comprises a pair of field probes, the field probes conductively connected with the electromagnetic resonator. A gas-fill vessel is formed from a closed, transparent body, forming a cavity. The gas-fill vessel is not contiguous with (detached from) the electromagnetic resonator and is capacitively coupled with the field probes. The gas-fill vessel further contains a gas within the cavity, whereby the gas is induced to emit light when electromagnetic radiation from the electromagnetic radiation source resonates inside the electromagnetic resonator, the electromagnetic resonator capacitively coupling the electromagnetic radiation to the gas, which becomes a plasma and emits light.

US Patent:

D612093, Mar 16, 2010

Filed:

May 15, 2009

Appl. No.:

29/337185

Inventors:

Frederick M. Espiau - Topanga CA, US
Mehran Matloubian - Encino CA, US

Assignee:

Topanga Technologies, Inc. - Canoga CA

International Classification:

2603

US Classification:

D26105