Mayur Kamalnayan Trivedi from San Jose, CA, age 53

Resumes

Manager

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Location:

Milpitas, CA

Industry:

Accounting

Work:

Citi
Manager
Pwc
Senior Associate
Pwc Mar 2015 - Mar 2016
Associate
Suresh Surana & Associates Llp Mar 2014 - Feb 2015
Audit Associate
Suresh Surana & Associates Llp Mar 2011 - Feb 2014
Article Trainee

Education:

The Institute of Chartered Accountants of India 2010 - 2014
Laxmi Education Societys Chinai College of Commerce & Economics Dr S Radhakrishnan Marg Andheri East Mumbai 400 069 2006 - 2009
Bachelor of Commerce, Bachelors

Skills:

Financial Reporting
Ifrs
Auditing

Strategic Marketing Director, Fabvantage Technology Services

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Location:

Milpitas, CA

Industry:

Semiconductors

Work:

Applied Materials
Strategic Marketing Director, Fabvantage Technology Services
Applied Materials
Product Marketing Director, Strategic Programs
Applied Materials
Global Product Manager Senior Etch Products
Novellus Systems Jul 1998 - Sep 2011
Senior Manager at Novellus Systems Inc
Nasa Ames Research Center 1996 - 1998
Principal Engineer

Education:

San Jose State University 1996 - 1998
Master of Science, Masters, Chemical Engineering University of California, Berkeley 1989 - 1993
Bachelors, Bachelor of Science, Chemical Engineering

Skills:

Semiconductor Industry
Semiconductors
Thin Films
Design of Experiments
Engineering Management
Spc
Failure Analysis
Product Management
Manufacturing
Process Engineering
Product Development
Electronics
Cross Functional Team Leadership
Metrology
Product Engineering
R&D
Silicon
Management
Jmp
Process Simulation
Process Integration
Ic
R

Marketing Manager At Novellus Systems Inc

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Location:

4000 north 1St St, San Jose, CA 95113

Industry:

Semiconductors

Work:

Novellus Systems
Marketing Manager at Novellus Systems Inc

Education:

University of California, Berkeley 1989 - 1993

Mayur Trivedi

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Mayur Trivedi

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Mayur Trivedi

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Mayur Trivedi

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Mayur Trivedi

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Location:

United States

Medicine Doctors

Mayur K. Trivedi

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Specialties:

Gastroenterology, Internal Medicine

Work:

Mayur Trivedi MD
2230 Lynn Rd STE 210, Thousand Oaks, CA 91360
805 497-0961 (phone), 805 583-4465 (fax)

Mayur Trivedi MD
1687 Erringer Rd STE 103, Simi Valley, CA 93065
805 583-4463 (phone)

Education:

Medical School
Ross Univ, Sch of Med, Roseau, Dominica
Graduated: 2002

Procedures:

Colonoscopy
Upper Gastrointestinal Endoscopy
Endoscopic Retrograde Cholangiopancreatography (ERCP)
Sigmoidoscopy

Conditions:

Benign Polyps of the Colon
Cholelethiasis or Cholecystitis
Chronic Pancreatitis
Diverticulosis
Esophagitis

Languages:

English

Description:

Dr. Trivedi graduated from the Ross Univ, Sch of Med, Roseau, Dominica in 2002. He works in Thousand Oaks, CA and 1 other location and specializes in Gastroenterology and Internal Medicine. Dr. Trivedi is affiliated with Los Robles Hospital & Medical Center and Simi Valley Hospital.

Vehicle Records

Mayur Trivedi
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Address:

43972 Rosemere Dr, Fremont, CA 94539
VIN:

1N4CL21E38C234692
Make:

Nissan
Model:

Altima
Year:

2008

Us Patents

Low Leakage Current Silicon Carbonitride Prepared Using Methane, Ammonia And Silane For Copper Diffusion Barrier, Etchstop And Passivation Applications
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US Patent:

6593653, Jul 15, 2003
Filed:

Sep 30, 1999
Appl. No.:

09/409185
Inventors:

Srinivasan Sundararajan - Sunnyvale CA
Mayur Trivedi - Fremont CA
Assignee:

Novellus Systems, Inc. - San Jose CA
International Classification:

H01L 2348
US Classification:

257751, 257758, 257762, 257767
Abstract:

A silicon carbon nitride (SiCN) layer is provided which has a low leakage current and is effective in preventing the migration or diffusion of metal or copper atoms through the SiCN layer. The SiCN layer can be used as a diffusion barrier between a metal portion (such as a copper line or via) and an insulating dielectric to prevent metal atom diffusion into the dielectric. The SiCN layer can also be used as an etchstop or passivation layer. The SiCN layer can be applied in a variety ways, including PECVD (e. g. , using SiH , CH , and NH ) and HDP CVD (e. g. , using SiH , C H , and N ).

Method Of Forming A Copper Diffusion Barrier
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US Patent:

6444568, Sep 3, 2002
Filed:

Nov 2, 2000
Appl. No.:

09/705279
Inventors:

Srinivasan Sundararajan - Sunnyvale CA
Mayur Trivedi - Fremont CA
Assignee:

Novellus Systems, Inc. - San Jose CA
International Classification:

H01L 214763
US Classification:

438627, 438780
Abstract:

A silicon carbon nitride (SiCN) layer is provided which has a low leakage current and is effective in preventing the migration or diffusion of metal or copper atoms through the SiCN layer. The SiCN layer can be used as a diffusion barrier between a metal portion (such as a copper line or via) and an insulating dielectric to prevent metal atom diffusion into the dielectric. The SiCN layer can also be used as an etchstop or passivation layer. The SiCN layer can be applied in a variety ways, including PECVD (e. g. , using SiH , CH , and NH ) and HDP CVD (e. g. , using SiH , C H , and N ).

Apparatus For Depositing A Cobalt Layer Using A Carousel Batch Deposition Reactor
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US Patent:

20180135180, May 17, 2018
Filed:

Jan 15, 2018
Appl. No.:

15/871683
Inventors:

- Santa Clara CA, US
MAYUR TRIVEDI - Fremont CA, US
International Classification:

C23C 16/46
C23C 16/56
C23C 16/18
C23C 16/16
C23C 16/04
Abstract:

Methods and apparatus for depositing a cobalt layer in features formed on a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body having a processing volume; a rotatable substrate support disposed within the chamber body, wherein the substrate support is configured to rotate one or more substrates arranged in a planar array between a first processing position and a second processing position, wherein the first processing position and the second processing position are independently thermally controlled; a showerhead disposed opposite the rotatable substrate support configured to expose the one or more substrates at the first processing position to a cobalt containing precursor; and a heat source disposed within the substrate support configured to heat the one or more substrates at the second processing position.

Methods And Apparatus For Depositing A Cobalt Layer Using A Carousel Batch Deposition Reactor
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US Patent:

20160017482, Jan 21, 2016
Filed:

Jul 17, 2015
Appl. No.:

14/802275
Inventors:

- Santa Clara CA, US
MAYUR TRIVEDI - Fremont CA, US
International Classification:

C23C 16/06
C23C 16/505
C23C 16/458
C23C 16/46
C23C 16/455
Abstract:

Methods and apparatus for depositing a cobalt layer in features formed on a substrate are provided herein. In some embodiments, a method of depositing a cobalt layer atop a substrate includes: (a) providing a substrate to a substrate support that is rotatable between two processing positions; (b) exposing the substrate to a cobalt containing precursor at a first processing position to deposit a cobalt layer atop the substrate, wherein the substrate at the first processing position is at a first temperature; (c) rotating the substrate to a second processing position; and (d) annealing the substrate at the second processing position to remove contaminants from the cobalt layer, wherein the substrate at the second processing position is at a second temperature greater than the first temperature.