Maxim B Kelman

US Patent:

7199451, Apr 3, 2007

Filed:

Sep 30, 2004

Appl. No.:

10/956283

Inventors:

Maxim B. Kelman - Mountain View CA, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 29/04

US Classification:

257627, 257628, 438150

Abstract:

An assembly and method of making the same wherein the assembly incorporates a rare-earth oxide film to form a [110] crystal lattice orientation semiconductor film. The assembly comprises a substrate, a rare-earth oxide film formed on the substrate, and a [110]-oriented semiconductor film formed on the rare-earth oxide film. The rare-earth oxide film having a [110] crystal lattice orientation. The substrate has a [001] crystal lattice orientation.

US Patent:

7521340, Apr 21, 2009

Filed:

Dec 4, 2007

Appl. No.:

11/950024

Inventors:

Francesco Lemmi - Sunnyvale CA, US
Elena V. Rogojina - Los Altos CA, US
Pingrong Yu - Sunnyvale CA, US
David Jurbergs - Austin TX, US
Homer Antoniadis - Mountain View CA, US
Maxim Kelman - Mountain View CA, US

Assignee:

Innovalight, Inc. - Sunnyvale CA

International Classification:

H01L 21/20

US Classification:

438479, 136255, 977982, 977893

Abstract:

A method of forming a densified nanoparticle thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30 C. and about 300 C. , and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes exposing the porous compact to an HF vapor for a second time period of between about 2 minutes and about 20 minutes, and heating the porous compact for a second temperature of between about 25 C. and about 60 C. ; and heating the porous compact to a third temperature between about 100 C.

US Patent:

7572740, Aug 11, 2009

Filed:

Apr 1, 2008

Appl. No.:

12/060528

Inventors:

Mason Terry - Redwood City CA, US
Malcolm Abbott - Sunnyvale CA, US
Maxim Kelman - Mountain View CA, US
Andreas Meisel - Redwood City CA, US
Dmitry Poplavskyy - San Jose CA, US
Eric Schiff - DeWitt NY, US

Assignee:

Innovalight, Inc. - Sunnyvale CA

International Classification:

H01L 21/302
H01L 21/461

US Classification:

438752, 438753, 438474, 438475, 257E2117, 257E21102, 257E21115, 257E21319, 257E21347

Abstract:

A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300 C. and about 1350 C. , and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed.

US Patent:

7718707, May 18, 2010

Filed:

Aug 21, 2007

Appl. No.:

11/842466

Inventors:

Maxim Kelman - Mountain View CA, US
Xuegeng Li - Sunnyvale CA, US
Pingrong Yu - Sunnyvale CA, US
Karel Vanheusden - Los Altos CA, US
David Jurbergs - Austin TX, US

Assignee:

Innovalight, Inc. - Santa Clara CA

International Classification:

B05D 7/00
B22F 3/00
B01F 3/04
C09K 3/30

US Classification:

516 1, 427212, 428546

Abstract:

A set of nanoparticles is disclosed. Each nanoparticle of the set of nanoparticles is comprised of a set of Group IV atoms arranged in a substantially spherical configuration. Each nanoparticle of the set of nanoparticles further having a sphericity of between about 1. 0 and about 2. 0; a diameter of between about 4 nm and about 100 nm; and a sintering temperature less than a melting temperature of the set of Group IV atoms.

US Patent:

7776724, Aug 17, 2010

Filed:

Dec 4, 2007

Appl. No.:

11/950030

Inventors:

Francesco Lemmi - Sunnyvale CA, US
Elena V. Rogojina - Los Altos CA, US
Pingrong Yu - Sunnyvale CA, US
David Jurbergs - Austin TX, US
Homer Antoniadis - Mountain View CA, US
Maxim Kelman - Mountain View CA, US

Assignee:

Innovalight, Inc. - Santa Clara CA

International Classification:

H01L 21/208
C30B 25/04

US Classification:

438478, 117103, 117 84, 117 95, 117 2, 117 94

Abstract:

A method of forming a densified nanoparticle thin film is disclosed. The method includes positioning a substrate in a first chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30 C. and about 300 C. , and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed; and positioning the substrate in a second chamber, the second chamber having a pressure of between about 1×10Torr and about 1×10Torr. The method further includes depositing on the porous compact a dielectric material; wherein the densified nanoparticle thin film is formed.

US Patent:

7851336, Dec 14, 2010

Filed:

Mar 13, 2008

Appl. No.:

12/047824

Inventors:

Dmitry Poplavskyy - San Jose CA, US
Maxim Kelman - Mountain View CA, US
Mason Terry - Redwood City CA, US

Assignee:

Innovalight, Inc. - Sunnyvale CA

International Classification:

H01L 21/368

US Classification:

438479, 438502, 257E21464, 977892

Abstract:

A method for forming a passivated densified nanoparticle thin film on a substrate in a chamber is disclosed. The method includes depositing a nanoparticle ink on a first region on the substrate, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30 C. and about 400 C. , and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes flowing an oxidizer gas into the chamber; and heating the porous compact to a second temperature between about 600 C. and about 1000 C. , and for a second time period of between about 5 seconds and about 1 hour; wherein the passivated densified nanoparticle thin film is formed.

US Patent:

7910462, Mar 22, 2011

Filed:

Oct 16, 2006

Appl. No.:

11/582048

Inventors:

Maxim B. Kelman - Mountain View CA, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 21/20
C30B 25/18

US Classification:

438479, 117101, 257E21131, 438973

Abstract:

An assembly and method of making the same wherein the assembly incorporates a rare-earth oxide film to form a [110] crystal lattice orientation semiconductor film. The assembly comprises a substrate, a rare-earth oxide film formed on the substrate, and a [110]-oriented semiconductor film formed on the rare-earth oxide film. The rare-earth oxide film having a [110] crystal lattice orientation. The substrate has a [001] crystal lattice orientation.

US Patent:

7923368, Apr 12, 2011

Filed:

Apr 25, 2008

Appl. No.:

12/109684

Inventors:

Mason Terry - Redwood City CA, US
Homer Antoniadis - Mountain View CA, US
Dmitry Poplavskyy - San Jose CA, US
Maxim Kelman - Mountain View CA, US

Assignee:

Innovalight, Inc. - Sunnyvale CA

International Classification:

H01L 21/44

US Classification:

438660, 438603, 438604, 438657, 257E21135, 257E21466

Abstract:

A method of forming a diffusion region is disclosed. The method includes depositing a nanoparticle ink on a surface of a wafer to form a non-densified thin film, the nanoparticle ink having set of nanoparticles, wherein at least some nanoparticles of the set of nanoparticles include dopant atoms therein. The method also includes heating the non-densified thin film to a first temperature and for a first time period to remove a solvent from the deposited nanoparticle ink; and heating the non-densified thin film to a second temperature and for a second time period to form a densified thin film, wherein at least some of the dopant atoms diffuse into the wafer to form the diffusion region.