Lancaster University, M.A., 2004; Lancaster University, M.A., 2004; University of California, Berkeley, B.A., 2002; University of California, Berkeley, B.A., 2002
SuccessFactors since Mar 2013
Recruiter
Robert Half International - Danvers, MA Jun 2011 - Feb 2013
Branch Manager
Robert Half International Accountemps Division - Danvers, MA Jan 2011 - Jun 2011
Division Director
Robert Half International Office Team Division - Danvers, MA Aug 2010 - Jan 2011
Division Director
Robert Half International Office Team Division - Danvers, MA Dec 2008 - Aug 2010
Staffing Manager
Education:
Salem State University 2003 - 2007
Bachelor's, Business Administration
Skills:
Recruiting Temporary Placement Contract Recruitment Interview Preparation Sales Management Marketing Interviewing Skills Applicant Tracking Systems Interview Skills Training Account Management Hiring Crm Business Development Cloud Computing Management Technical Recruiting Full Life Cycle Recruiting Sales Recruitment Corporate Recruiting Recruitment Tools Recruitment Training Team Management Successfactors Icims Taleo Lever Avature Cyber Security Process Management Tableau Sourcing Leadership
Intel Corporation
Component Design Engineer
Intel Corporation Jun 2011 - Aug 2011
Undergrad Intern Technical
International Electronic Machines Corporation May 2010 - May 2011
Intern
Education:
Rensselaer Polytechnic Institute 2008 - 2012
Bachelors, Bachelor of Science, Electrical Engineering, Engineering
North Warren High School 2008
Skills:
Verilog C++ Programming Matlab Asic C Debugging Electrical Engineering Perl Semiconductors Microsoft Office Dft Bist Application Specific Integrated Circuits Very Large Scale Integration Engineering C# Labview Linux Vlsi Systemverilog Perl Script Python Scan Unix Rtl Design Joint Test Action Group Synopsys Tools Automatic Test Pattern Generation Gate Level Simulation Microsoft Excel Universal Verification Methodology Static Timing Analysis Cdc Sql Vim
In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.
Trisilylamine Derivatives As Precursors For High Growth Rate Silicon-Containing Films
- Tempe AZ, US Matthew R. MacDonald - Laguna Niguel CA, US Meiliang Wang - Shanghai, CN
Assignee:
Versum Materials US, LLC - Tempe AZ
International Classification:
C23C 16/455 C23C 16/40 C23C 16/34
Abstract:
Described herein are compositions and methods for forming silicon and oxygen containing films. In one aspect, the film is deposited from at least one precursor, wherein the at least one precursor selected from the group consisting of Formulae A and B:wherein R, R, and Rare as defined herein.
Organoamino-Functionalized Linear And Cyclic Oligosiloxanes For Deposition Of Silicon-Containing Films
Amino-functionalized linear and cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized linear and cyclic oligosiloxanes are also disclosed.
Compositions And Methods Using Same For Silicon Containing Films
- Tempe AZ, US Matthew R. MacDonald - Laguna Niguel CA, US Manchao Xiao - San Diego CA, US Ming Li - San Marcos CA, US Meiliang Wang - San Marcos CA, US
Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I:as described herein.
Formulation For Deposition Of Silicon Doped Hafnium Oxide As Ferroelectric Materials
- Tempe AZ, US Matthew R. MacDonald - Laguna Niguel CA, US Moo-Sung Kim - Gyeonggi-do, KR Se-Won Lee - Gyeonggi-do, KR
Assignee:
Versum Materials US, LLC - Tempe AZ
International Classification:
C23C 16/40 H01L 21/02 C23C 16/455
Abstract:
In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursor compounds that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films as ferroelectric materials using the formulations.
Formulation For Deposition Of Silicon Doped Hafnium Oxide As Ferroelectric Materials
In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.
Organoamino-Functionalized Linear And Cyclic Oligosiloxanes For Deposition Of Silicon-Containing Films
- Tempe AZ, US Matthew R. MacDonald - Laguna Niguel CA, US Xinjian Lei - Vista CA, US Meiliang Wang - San Marcos CA, US
Assignee:
Versum Materials US, LLC - Tempe AZ
International Classification:
C08G 77/26 C08G 77/06 C23C 16/455
Abstract:
Amino-functionalized linear and cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized linear and cyclic oligosiloxanes are also disclosed.
Compositions And Methods Using Same For Deposition Of Silicon-Containing Films
- Tempe AZ, US Moo-Sung KIM - Sungnam, Gyunggi-Do, KR Matthew R. MACDONALD - Laguna Niguel CA, US Manchao XIAO - San Diego CA, US
International Classification:
H01L 21/02 C23C 16/40 C23C 16/36 C23C 16/34
Abstract:
Described herein are compositions and methods using same for forming a silicon-containing film or material such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film in a semiconductor deposition process, such as without limitation, a plasma enhanced atomic layer deposition of silicon-containing film.
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Matthew Macdonald
Work:
Cataldo Ambulance - EMT (2009)
Education:
University of Massachusetts Lowell - Criminal Justice
Tagline:
Elderly young man.
Matthew Macdonald
Work:
In-N-Out Burger - Level 5 (8)
Education:
VVC - Corrections
Tagline:
Pretty much the most awesome person ever....ever.
Matthew Macdonald
Lived:
Honolulu, Hawaii Portland Oregon
Tagline:
Enjoyer of waterfalls
Matthew Macdonald
Education:
National American University - Information Systems Management
Relationship:
Married
About:
Grew up around Norristown, PA and Elmer, NJ. Served in the Marine Corps, did I.T. consulting through Y2k, and worked for a number of telecommunication companies. Spent time with the SCA, Dagorhir, and...
Stoney Creek Elementary School Norristown PA 1977-1982, Shady Grove Elementary School Ambler PA 1982-1984, Wissahickon Middle School Ambler PA 1984-1984
Community:
Joshua Perry, Kellie Holmstrom, Loretta Dickson, Kelly Daroshefski