Matthew Stephen Macdonald

Author:

Matthew MacDonald

ISBN #:

0596001169

Author:

Matthew MacDonald

ISBN #:

0596002505

Author:

Matthew Macdonald

ISBN #:

0596005202

Author:

Matthew Macdonald

ISBN #:

0596007264

Author:

Matthew Macdonald

ISBN #:

0596008422

Author:

Matthew Macdonald

ISBN #:

0596100191

Author:

Matthew Macdonald

ISBN #:

0596101546

Author:

Matthew Macdonald

ISBN #:

0596514220

US Patent:

20230058258, Feb 23, 2023

Filed:

Dec 22, 2020

Appl. No.:

17/788211

Inventors:

- TEMPE AZ, US
XINJIAN LEI - VISTA CA, US
DANIEL P. SPENCE - CARLSBAD CA, US
MANCHAO XIAO - SAN DIEGO CA, US
RONALD MARTIN PEARLSTEIN - SAN MARCOS CA, US
MATTHEW R. MACDONALD - MISSION VIEJO CA, US
MADHUKAR B. RAO - CARLSBAD CA, US

Assignee:

VERSUM MATERIALS US, LLC - TEMPE AZ

International Classification:

C23C 16/04
C23C 16/44
C23C 16/455
C23C 16/40
C23C 16/34

Abstract:

An atomic layer deposition method for depositing a film into surface features of a substrate is disclosed. The method may include the step of placing the substrate having surface features into a reactor. An organic passivation agent may be introduced into the 5 reactor, which may react with a portion of exposed hydroxyl radicals within the surface features. Subsequently, unreacted organic passivation agent may be purged, and then a precursor may be introduced. The precursor may react with the remaining exposed hydroxyl radicals that did not interact with the organic passivation agent. Subsequently, the unreacted precursor may be purged, and an oxygen source or a nitrogen source may 10 be introduced into the reactor to form a film within the surface features.

US Patent:

20210407793, Dec 30, 2021

Filed:

Sep 8, 2021

Appl. No.:

17/469211

Inventors:

- Tempe AZ, US
MANCHAO XIAO - SAN DIEGO CA, US
XINJIAN LEI - VISTA CA, US
RICHARD HO - ANAHEIM CA, US
HARIPIN CHANDRA - SAN MARCOS CA, US
MATTHEW R. MACDONALD - LAGUNA NIGUEL CA, US
MEILIANG WANG - SAN MARCOS CA, US

Assignee:

VERSUM MATERIALS US, LLC - Tempe AZ

International Classification:

H01L 21/02
C07F 7/10
C23C 16/24
C23C 16/455
C09D 5/24

Abstract:

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below:In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350 C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

US Patent:

20200308416, Oct 1, 2020

Filed:

Jun 15, 2020

Appl. No.:

16/902101

Inventors:

- Tempe AZ, US
Meiliang Wang - Carlsbad CA, US
Matthew R. MacDonald - Laguna Niguel CA, US
Richard Ho - Tempe AZ, US
Manchao Xiao - San Diego CA, US
Suresh Kalpatu Rajaraman - San Marcos CA, US

Assignee:

Versum Materials US, LLC - Tempe AZ

International Classification:

C09D 1/00
C01B 33/12
C07F 7/02
C07F 7/10
C23C 16/40
C23C 16/455

Abstract:

Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B:as defined herein.

US Patent:

20200248309, Aug 6, 2020

Filed:

Feb 4, 2020

Appl. No.:

16/781799

Inventors:

- Tempe AZ, US
Xinjian Lei - Vista CA, US
Haripin Chandra - San Marcos CA, US
Matthew R. MacDonald - Laguna Niguel CA, US

Assignee:

Versum Materials US, LLC - Tempe AZ

International Classification:

C23C 16/455
C07F 7/21
C07F 7/10
C23C 16/40

Abstract:

A method for depositing a film comprising silicon and oxygen onto a substrate includes (a) providing a substrate in a reactor; (b) introducing into the reactor at least one silicon precursor compound selected from the group consisting of Formulae A, B, and C as described herein, (c) purging the reactor with a purge gas; (d) introducing at least one of an oxygen-containing source and a nitrogen-containing source into the reactor; and (e) purging the reactor with the purge gas, wherein the steps b through e are repeated until a desired thickness of resulting silicon-containing film is deposited; and (f) treating the resulting silicon-containing film with RSi(NRR)wherein Rare the same as aforementioned, preferably methyl or ethyl; and x=1, 2, or 3; and wherein the method is conducted at one or more temperatures ranging from about 20 C. to 300 C.

US Patent:

20200051811, Feb 13, 2020

Filed:

Sep 24, 2019

Appl. No.:

16/580782

Inventors:

- Tempe AZ, US
Manchao Xiao - San Diego CA, US
Xinjian Lei - Vista CA, US
Richard Ho - Anaheim CA, US
Haripin Chandra - San Marcos CA, US
Matthew R. MacDonald - Laguna Niguel CA, US
Meiliang Wang - San Marcos CA, US

Assignee:

Versum Materials US, LLC - Tempe AZ

International Classification:

H01L 21/02
C09D 5/24
C23C 16/24
C07F 7/10

Abstract:

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below:In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350 C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

US Patent:

20200040192, Feb 6, 2020

Filed:

Sep 8, 2017

Appl. No.:

15/698794

Inventors:

- Tempe AZ, US
Meiliang Wang - Carlsbad CA, US
Matthew R. MacDonald - Laguna Niguel CA, US
Richard Ho - Anaheim CA, US
Manchao Xiao - San Diego CA, US
Suresh Kalpatu Rajaraman - San Marcos CA, US

Assignee:

Versum Materials US, LLC - Tempe AZ

International Classification:

C09D 1/00
C01B 33/12
C07F 7/10
C07F 7/02
C23C 16/40
C23C 16/455

Abstract:

Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B:as defined herein.

US Patent:

20180223428, Aug 9, 2018

Filed:

Jan 30, 2018

Appl. No.:

15/884013

Inventors:

- Tempe AZ, US
Manchao Xiao - San Diego CA, US
Matthew R. MacDonald - Laguna Niguel CA, US
Daniel P. Spence - Carlsbad CA, US
Meiliang Wang - San Marcos CA, US
Suresh Kalpatu Rajaraman - San Marcos CA, US

Assignee:

Versum Materials US, LLC - Tempe AZ

International Classification:

C23C 16/455
C08G 77/26
C08G 77/54
C08L 83/08
C08K 5/5415

Abstract:

Organoamino-polysiloxanes, which have at least three silicon atoms, oxygen atoms, as well as an organoamino group, and methods for making the organoamino-polysiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-polysiloxanes are also disclosed.

US Patent:

20180119276, May 3, 2018

Filed:

Dec 20, 2017

Appl. No.:

15/848270

Inventors:

- Tempe AZ, US
Anupama Mallikarjunan - San Marcos CA, US
Matthew R. MacDonald - Laguna Niguel CA, US
Manchao Xiao - San Diego CA, US

Assignee:

VERSUM MATERIALS US, LLC - Tempe AZ

International Classification:

C23C 16/32
C23C 16/40
C23C 16/455
C23C 16/36

Abstract:

Disclosed herein are containing silicon-based films and compositions and methods for forming the same. The silicon-based films contain