- Ewing NJ, US Craig Anthony OUTTEN - Rydal PA, US Gregory MCGRAW - Yardley PA, US Matthew KING - Moorestown NJ, US Xin XU - Plainsboro NJ, US
International Classification:
H01L 51/00 C23C 14/12 C23C 14/22 C23C 16/44
Abstract:
Organic vapor jet printing (OVJP) devices and techniques are provided that use a solid materials sublimation source to provide material for deposition on a substrate. Carrier gas from a carrier gas source entrains vapor from the solid material within each sublimation source for transport to a print head within a deposition chamber. The sublimation source includes a sufficiently long internal flow path to achieve an acceptable level of material saturation of the carrier gas.
- Ewing NJ, US Jason PAYNTER - Bristol PA, US Gregory MCGRAW - Yardley PA, US Matthew KING - Moorestown NJ, US
International Classification:
H01L 51/56 H01L 51/52 H01L 51/00
Abstract:
Techniques and devices are provided for attaching a die to a metal manifold. A metal-containing ink is used to deposit a metal trace on the die and thereby to form a gasket, after which the die is compressed against the manifold to form a sealed connection between the two.
- Ewing NJ, US Gregory MCGRAW - Yardley PA, US Matthew KING - Moorestown NJ, US Gregg KOTTAS - Ewing NJ, US
International Classification:
C23C 14/22 C23C 14/12 C23C 14/24
Abstract:
Embodiments of the disclosed subject matter provide a vapor distribution manifold that ejects organic vapor laden gas into a chamber and withdraws chamber gas, where vapor ejected from the manifold is incident on, and condenses onto, a deposition surface within the chamber that moves relative to one or more print heads in a direction orthogonal to a platen normal and a linear extent of the manifold. The volumetric flow of gas withdrawn by the manifold from the chamber may be greater than the volumetric flow of gas injected into the chamber by the manifold. The net outflow of gas from the chamber through the manifold may prevent organic vapor from diffusing beyond the extent of the gap between the manifold and deposition surface. The manifold may be configured so that long axes of delivery and exhaust apertures are perpendicular to a print direction.
A vertical transistor is provided that includes a base structure and a superlattice structure overlying the base structure. The superlattice structure comprises a multichannel ridge having sidewalls. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge. The vertical transistor also includes a source region that overlies the base structure and is in contact with a first end of the superlattice structure, a floating drain that overlies the base structure and is in contact with a second end of the superlattice structure, and a drain. When the vertical transistor is in an ‘ON’ state, current flows from the source region through the channels of the multichannel ridge to the floating drain, which funnels the current to the drain through at least a portion of the base structure.
Integrated Enhancement Mode And Depletion Mode Device Structure And Method Of Making The Same
JUSTIN ANDREW PARKE - ELLICOTT CITY MD, US ERIC J. STEWART - SILVER SPRING MD, US ROBERT S. HOWELL - SILVER SPRING MD, US HOWELL GEORGE HENRY - ELLICOTT CITY MD, US BETTINA NECHAY - LAUREL MD, US HARLAN CARL CRAMER - COLUMBIA MD, US MATTHEW RUSSELL KING - LINTHICUM MD, US SHALINI GUPTA - Baltimore MD, US RONALD G. FREITAG - Catonsville MD, US KAREN MARIE RENALDO - Pasadena CA, US
Assignee:
NORTHROP GRUMMAN SYSTEMS CORPORATION - FALLS CHURCH VA
International Classification:
H01L 27/088 H01L 21/8252 H01L 21/308
Abstract:
A method of forming an integrated circuit can include forming a heterostructure over a substrate structure, wherein the given substrate structure comprises a given semiconductor material. The method can include etching a castellated channel region in an e-mode device area of the heterostructure that defines a plurality of ridge channels interleaved between a plurality of trenches, the ridge channels comprising another semiconductor material. The method can also include forming an isolation region on the heterostructure to electrically isolate the e-mode device area from a d-mode device area of the heterostructure. The method can further include forming a mask with an opening that defines a castellated gate opening overlying the castellated channel region and the mask defines an opening overlaying a single planar gate overlying the d-mode device area of the heterostructure. The method can also include performing a contact fill with conductive material to form a castellated gate contact.
- Ewing NJ, US Gregory MCGRAW - Yardley PA, US Matthew KING - Moorestown NJ, US Gregg KOTTAS - Ewing NJ, US
International Classification:
C23C 14/22 C23C 14/12 C23C 14/24
Abstract:
Embodiments of the disclosed subject matter provide a vapor distribution manifold that ejects organic vapor laden gas into a chamber and withdraws chamber gas, where vapor ejected from the manifold is incident on, and condenses onto, a deposition surface within the chamber that moves relative to one or more print heads in a direction orthogonal to a platen normal and a linear extent of the manifold. The volumetric flow of gas withdrawn by the manifold from the chamber may be greater than the volumetric flow of gas injected into the chamber by the manifold. The net outflow of gas from the chamber through the manifold may prevent organic vapor from diffusing beyond the extent of the gap between the manifold and deposition surface. The manifold may be configured so that long axes of delivery and exhaust apertures are perpendicular to a print direction.
Valved Micronozzle Array For High Temperature Mems Application
- Ewing NJ, US Matthew KING - Evesham NJ, US William E. QUINN - Whitehouse Station NJ, US
International Classification:
B41J 2/14 B05B 1/16 B41J 2/16
Abstract:
Embodiments of the disclosed subject matter provide a micronozzle array formed from monolithic silicon. The micronozzle array may have a plurality of nozzles, where each nozzle of the plurality of nozzles including an integrated plug valve that allows flow from the nozzle to be attenuated separately from each other nozzle of the plurality of nozzles. Each of the plurality of nozzles may include a microchannel, formed from the monolithic silicon, having a first channel portion and a second channel portion, where the first channel portion is narrower than the second channel portion, and where the first channel portion forms an aperture of the nozzle that is configured to eject vapor from the microchannel. Each of the plurality of nozzles may include a stem, formed from the monolithic silicon that includes the integrated plug valve is suspended in the microchannel to attenuate the flow from the nozzle.
- Ewing NJ, US Jason PAYNTER - Bristol PA, US Gregory MCGRAW - Yardley PA, US Matthew KING - Evesham NJ, US
International Classification:
H01L 51/56 H01L 51/52 H01L 51/00
Abstract:
Techniques and devices are provided for attaching a die to a metal manifold. A metal-containing ink is used to deposit a metal trace on the die and thereby to form a gasket, after which the die is compressed against the manifold to form a sealed connection between the two.
Oct 2013 to 2000 PCs, serverInstitute for Bioscience and Biological Sciences
May 2013 to 2000 OIT IT Support AssistantSalisbury University
Sep 2013 to Mar 2014Weis Markets Damascus, MD Feb 2011 to Oct 2013University of Maryland College Park Tuition
Jan 2003 to Jan 2013HHMI Rockville, MD 2013 to 2013Plant Partners Gaithersburg, MD Feb 2011 to May 2011
Education:
University of Maryland College Park, MD Aug 2014 Bachelor of Science in Biological SciencesMontgomery College Germantown, MD Jan 2013 Associate of Arts in General Studies
Dec 2011 to 2000 Project EngineerJohnson Controls, Inc Capitol Heights, MD Oct 2010 to Dec 2011 Commercial Product SpecialistBoland Largo, MD Jul 2008 to Oct 2010 Inside SalesCentric Business Systems Laurel, MD Aug 2006 to Jul 2008 Account Manager
Education:
FROSTBURG STATE UNIVERSITY Frostburg, MD 2004 Bachelor of Science in Criminal Justice
Oct 2013 to Dec 2013 InternKatcef Brothers Inc Annapolis, MD Jun 2012 to Aug 2012 Delivery AssistantAdvanced Marina Ocean City, MD Jun 2011 to Aug 2011 Personal Watercraft GuideKaufmann's Tavern Gambrills, MD Jun 2010 to Aug 2010 Busboy
Education:
Salisbury University Salisbury, MD Dec 2013 Bachelor of Arts in Conflict Analysis and Dispute ResolutionUnited States Institute of Peace Certificate
7 Eleven Pasadena, MD May 2013 to Jul 2013 CashierWalgreens Glen Burnie, MD May 2012 to Nov 2012 Stocker/CashierLakeShore Home Improvements Pasadena, MD Jun 2009 to Oct 2011 Sub ContractorUnited States Army Fort Irwin, CA Jul 2006 to Aug 2008 M1 Tank Crewman
Education:
Chesapeake Pasadena, MD 2002 to 2006 Highschool Diploma in General Studies
Apr 2013 to 2000 Product Development EngineerVEECO CORPORATION Somerset, NJ 2007 to 2012 Hardware Development EngineerRANDOLPH BOARD OF EDUCATION, Randolph, NJ New York, NY 2005 to 2007 High School Mathematics TeacherSHUBHADA INDUSTRIES Mount Laurel, NJ 2004 to 2005 Junior Mechanical Engineer
Education:
Stevens Institute of Technology Hoboken, NJ 2010 Master of Science in Mechanical EngineeringRowan University Glassboro, NJ 2005 Graduate Certificate
Medicine Doctors
Dr. Matthew J King, Chester MD - MD (Doctor of Medicine)
Dr. King graduated from the University of Maryland School of Medicine in 2003. He works in Falls Church, VA and 3 other locations and specializes in Family Medicine. Dr. King is affiliated with Anne Arundel Medical Center and Sibley Memorial Hospital.
Byrdstown Medical Center 8401 Hwy 1 11, Byrdstown, TN 38549 931 864-3187 (phone), 931 864-7102 (fax)
Education:
Medical School University of Tennessee College of Medicine at Memphis Graduated: 1996
Languages:
English
Description:
Dr. King graduated from the University of Tennessee College of Medicine at Memphis in 1996. He works in Byrdstown, TN and specializes in Internal Medicine. Dr. King is affiliated with Livingston Regional Hospital.
New Brockton Fire Dept. - Training Capt. (2010) Fort Rucker Fire Dept. - Firefighter (2011) US Army - Sgt (2002-2011) Flatiron - Crash Rescue (2010-2011)
Education:
Poolesville High School
Matthew King
Work:
KSM Consulting (A Katz, Sapper & Miller Co.) - ERP Practice Lead (2011) Sikich - Sr. Consultant (2006-2011) EDI Consulting Group - Operations Manager (2003-2006)
Education:
Kelley School of Business - Accounting
Relationship:
Married
Matthew King
Work:
Telstra - BigPond Money - Finance Manager (2011)
Education:
University of Sydney - History/Politics, Knox Grammar
About:
I see myself as web evangelist and I pride myself in having a user focused, broad technology understanding with a keen interest in the convergence of the digital world and day to day experien...
Bragging Rights:
Professional Specialties: Web strategy and development for high volume sites, digital publishing, online advertising and marketing, social networking, project & team management, Information Architecture and User Interface design, Systems Specification and Business Analysis, e-commerce (full cycle), web based content management, authoring and design and SEO/SEM.
Matthew King
Work:
Harvey Norman - TV MAN (2009)
Education:
Some School
Tagline:
SUP
Matthew King
Education:
Eastern Nazarene College - Electrical Engineering
Relationship:
Married
Tagline:
Proud Father and a Rockin' Drummer
Bragging Rights:
I'm an engineer, I've rocked the skins in several bands, and have a great family with one padawan runnin' around and one on the way.
Matthew King
Work:
King Law Offices - Attorney (2007)
Education:
DePaul University College of Law
Matthew King
Education:
Duke University - ECE, Purdue University - ECET
About:
Lover of all things Google, Computer Engineer, software developer, hardware designer.
Bragging Rights:
Have my own 16 node cluster in my guestroom :)
Matthew King
Education:
United States Merchant Marine Academy - Marine Engineering / Nautical Science, Yuma High School, Apple Valley High School