Matthew J King

Author:

Matthew King

ISBN #:

0787948659

Author:

Matthew A. King

ISBN #:

0662279514

Author:

Matthew J. King

ISBN #:

0080444288

US Patent:

20170288045, Oct 5, 2017

Filed:

Jun 15, 2017

Appl. No.:

15/624445

Inventors:

BETTINA A. NECHAY - LAIREI MD, US
SHALINI GUPTA - FALLS CHURCH VA, US
MATTHEW RUSSELL KING - LINTHICUM MD, US
ERIC J. STEWART - SILVER SPRING MD, US
ROBERT S. HOWELL - SILVER SPRING MD, US
JUSTIN ANDREW PARKE - ELLICOTT CITY MD, US
HARLAN CARL CRAMER - COLUMBIA MD, US
HOWELL GEORGE HENRY - ELLICOTT CITY MD, US
RONALD G. FREITAG - CATONSVILLE MD, US
KAREN MARIE RENALDO - PASADENA MD, US

Assignee:

NORTHROP GRUMMAN SYSTEMS CORPORATION - FALLS CHURCH VA

International Classification:

H01L 29/778
H01L 29/66
H01L 29/205
H01L 29/15
H01L 29/20

Abstract:

A transistor device is provided that comprises a base structure, and a superlattice structure overlying the base structure and comprising a multichannel ridge having sloping sidewalls. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge, wherein a parameter of at least one of the heterostructures is varied relative to other heterostructures of the plurality of heterostructures. The transistor device further comprises a three-sided gate contact that wraps around and substantially surrounds the top and sides of the multichannel ridge along at least a portion of its depth.

US Patent:

20160336425, Nov 17, 2016

Filed:

Jul 28, 2016

Appl. No.:

15/222039

Inventors:

BETTINA A. NECHAY - LAIREI MD, US
SHALINI GUPTA - FALLS CHURCH VA, US
MATTHEW RUSSELL KING - LINTHICUM MD, US
ERIC J. STEWART - SILVER SPRING MD, US
ROBERT S. HOWELL - SILVER SPRING MD, US
JUSTIN ANDREW PARKE - ELLICOTT CITY MD, US
HARLAN CARL CRAMER - COLUMBIA MD, US
HOWELL GEORGE HENRY - ELLICOTT CITY MD, US
RONALD G. FREITAG - CATONSVILLE MD, US
KAREN MARIE RENALDO - PASADENA MD, US

Assignee:

NORTHROP GRUMMAN SYSTEMS CORPORATION - FALLS CHURCH VA

International Classification:

H01L 29/66
H01L 29/205
H01L 21/3065
H01L 29/10

Abstract:

A transistor device is provided that comprises a base structure, and a superlattice structure overlying the base structure and comprising a multichannel ridge having sloping sidewalls. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge, wherein a parameter of at least one of the heterostructures is varied relative to other heterostructures of the plurality of heterostructures. The transistor device further comprises a three-sided gate contact that wraps around and substantially surrounds the top and sides of the multichannel ridge along at least a portion of its depth.

US Patent:

20160190267, Jun 30, 2016

Filed:

Mar 9, 2016

Appl. No.:

15/065298

Inventors:

ERIC J. STEWART - SILVER SPRING MD, US
HOWELL GEORGE HENRY - ELLICOTT CITY MD, US
ROBERT S. HOWELL - SILVER SPRING MD, US
MATTHEW RUSSELL KING - LINTHICUM MD, US
JUSTIN ANDREW PARKE - ELLICOTT CITY MD, US
BETTINA NECHAY - LAUREL MD, US
HARLAN CARL CRAMER - COLUMBIA MD, US
RONALD G. FREITAG - CATONSVILLE MD, US
KAREN MARIE RENALDO - PASADENA MD, US

Assignee:

NORTHROP GRUMMAN SYSTEMS CORPORATION - FALLS CHURCH VA

International Classification:

H01L 29/423
H01L 29/20
H01L 29/778
H01L 29/06

Abstract:

A device is provided that comprises a first pillar disposed in a first region and overlying a base structure, and a second pillar disposed in a second region and overlying the base structure and being spaced apart from the first pillar by a device region. A bridge is disposed in the device region with a first end connected to the first pillar and a second end connected to the second pillar. The bridge includes a top, sides, and a bottom. The bridge is formed from one or more heterostructures with an undercut opening extending from the bottom to an underlying structure. A four-sided conductive contact wraps around and substantially surrounds the bridge around its top, its sides, and its bottom along at least a portion of its length between the first and second end.

US Patent:

20160126340, May 5, 2016

Filed:

Nov 5, 2014

Appl. No.:

14/533752

Inventors:

BETTINA A. NECHAY - LAIREI MD, US
SHALINI GUPTA - FALLS CHURCH VA, US
MATTHEW RUSSELL KING - LINTHICUM MD, US
ERIC J. STEWART - SILVER SPRING MD, US
ROBERT S. HOWELL - SILVER SPRING MD, US
JUSTIN ANDREW PARKE - ELLICOTT CITY MD, US
HARLAN CARL CRAMER - COLUMBIA MD, US
HOWELL GEORGE HENRY - ELLICOTT CITY MD, US
RONALD G. FREITAG - CATONSVILLE MD, US
KAREN MARIE RENALDO - PASADENA MD, US

Assignee:

NORTHROP GRUMMAN SYSTEMS CORPORATION - FALLS CHURCH VA

International Classification:

H01L 29/778
H01L 29/10
H01L 29/66

Abstract:

A transistor device is provided that comprises a base structure, and a superlattice structure overlying the base structure and comprising a multichannel ridge having sloping sidewalls. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge, wherein a parameter of at least one of the heterostructures is varied relative to other heterostructures of the plurality of heterostructures. The transistor device further comprises a three-sided gate contact that wraps around and substantially surrounds the top and sides of the multichannel ridge along at least a portion of its depth.

US Patent:

20160049473, Feb 18, 2016

Filed:

Aug 13, 2014

Appl. No.:

14/459006

Inventors:

ERIC J. STEWART - SILVER SPRING MD, US
HOWELL GEORGE HENRY - ELLICOTT CITY MD, US
ROBERT S. HOWELL - SILVER SPRING MD, US
MATTHEW RUSSELL KING - LINTHICUM MD, US
JUSTIN ANDREW PARKE - ELLICOTT CITY MD, US
BETTINA NECHAY - LAUREL MD, US
HARLAN CARL CRAMER - COLUMBIA MD, US

Assignee:

NORTHROP GRUMMAN SYSTEMS CORPORATION - FALLS CHURCH VA

International Classification:

H01L 29/06
H01L 29/423
H01L 29/205
H01L 29/20
H01L 29/778
H01L 29/66

Abstract:

A device is provided that comprises a first pillar disposed in a first region and overlying a base structure, and a second pillar disposed in a second region and overlying the base structure and being spaced apart from the first pillar by a device region. A bridge is disposed in the device region with a first end connected to the first pillar and a second end connected to the second pillar. The bridge includes a top, sides, and a bottom. The bridge is formed from one or more heterostructures with an undercut opening extending from the bottom to an underlying structure. A four-sided conductive contact wraps around and substantially surrounds the bridge around its top, its sides, and its bottom along at least a portion of its length between the first and second end.