Masanobu Igeta from Albany, NY, age 51

Method And System For Forming An Oxynitride Layer
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US Patent:

7501352, Mar 10, 2009
Filed:

Mar 30, 2005
Appl. No.:

11/093260
Inventors:

Masanobu Igeta - Fishkill NY, US
Cory Wajda - Sand Lake NY, US
David L. O'Meara - Poughkeepsie NY, US
Kristen Scheer - Milton NY, US
Assignee:

Tokyo Electron, Ltd. - Tokyo
International Business Machines Corporation (“IBM”) - Armonk NY
International Classification:

H01L 21/31
US Classification:

438769, 438786, 257E21267
Abstract:

The present invention generally provides a method for preparing an oxynitride film on a substrate. A surface of the substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film on the surface. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits to nitridate the oxide film and form the oxynitride film.

Film Forming Method
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US Patent:

7754293, Jul 13, 2010
Filed:

Jun 16, 2006
Appl. No.:

11/454095
Inventors:

Shintaro Aoyama - Nirasaki, JP
Masanobu Igeta - Albany NY, US
Kazuyoshi Yamazaki - Nirasaki, JP
Assignee:

Tokyo Electron Limited - Tokyo
International Classification:

B05D 3/00
C08J 7/18
G21H 5/00
G21H 1/00
B01J 19/08
B29C 71/02
B29C 71/04
C04B 41/00
H01F 41/00
US Classification:

427553, 427532, 427457
Abstract:

A film forming method for forming an oxide film on a surface of a substrate to be processed in a processing vessel at a predetermined processing temperature, wherein the method includes a temperature elevating step of elevating a temperature of said substrate to a predetermined processing temperature, the step of elevating the temperature including a step of holding the substrate in an atmosphere containing oxygen before the substrate reaches a temperature of 450 C. The film forming method further comprises, after the step of elevating the temperature, a film forming step of forming a radical oxide film by irradiating the substrate surface with energy capable of exciting an oxygen gas.

Plasma Igniting Method And Substrate Processing Method
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US Patent:

20060205188, Sep 14, 2006
Filed:

May 12, 2006
Appl. No.:

11/432332
Inventors:

Masanobu Igeta - Albany NY, US
Kazuyoshi Yamazaki - Nirasaki-shi, JP
Shintaro Aoyama - Nirasaki-shi, JP
Hiroshi Shinriki - Matsudo-shi, JP
Assignee:

TOKYO ELECTRON LIMITED - Minato-ku
International Classification:

C23F 1/00
H01L 21/20
US Classification:

438478000, 156345280
Abstract:

A method to solve such a problem that plasma will not ignite in restarting operation of a processing container that has not been operated with the inside kept drawn to vacuum. Gas containing oxygen is passed in a processing container , and ultraviolet light is irradiated to the gas while gas inside the processing container is being discharged. After that, a remote plasma source is driven to ignite plasma.

Method And System For Forming A High-K Dielectric Layer
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US Patent:

20060228898, Oct 12, 2006
Filed:

Mar 30, 2005
Appl. No.:

11/093261
Inventors:

Cory Wajda - Sand Lake NY, US
Masanobu Igeta - Fishkill NY, US
Gerrit Leusink - Saltpoint NY, US
International Classification:

H01L 21/31
H01L 21/469
US Classification:

438769000, 438785000
Abstract:

A method for preparing an interfacial layer for a high-k dielectric layer on a substrate. A surface of said substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen to nitridate the oxide film to form the interfacial layer. A high-k dielectric layer is formed on said interfacial layer.

Multi-Source Method And System For Forming An Oxide Layer
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US Patent:

20070065593, Mar 22, 2007
Filed:

Sep 21, 2005
Appl. No.:

11/231336
Inventors:

Cory Wajda - Sand Lake NY, US
David O'Meara - Poughkeepsie NY, US
Masanobu Igeta - Fishkill NY, US
International Classification:

B05D 3/00
H05H 1/24
US Classification:

427532000, 427569000
Abstract:

A method for preparing an oxide film on a substrate. A surface of a substrate is oxidized to form an oxide film. The surface is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation and plasma induced dissociation of a process gas comprising at least one molecular composition comprising oxygen.

Method And System For Forming A Layer With Controllable Spstial Variation
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US Patent:

20070066084, Mar 22, 2007
Filed:

Sep 21, 2005
Appl. No.:

11/231335
Inventors:

Cory Wajda - Sand Lake NY, US
David O'Meara - Poughkeepsie NY, US
Masanobu Igeta - Fishkill NY, US
International Classification:

H01L 21/471
B05C 5/00
US Classification:

438765000, 438771000, 118072000, 118620000
Abstract:

A method and processing system for treating a surface of a substrate. The surface is exposed to at least two radicals from at least two radical sources. The radicals generated from the respective radical sources interact with different areas of the substrate surface. The invention suitably improves uniformity of oxidation, nitridation, or both.

Ruthenium Metal Feature Fill For Interconnects
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US Patent:

20190103363, Apr 4, 2019
Filed:

Oct 1, 2018
Appl. No.:

16/147928
Inventors:

- Tokyo, JP
Nicholas Joy - Mechanicville NY, US
Eric Chih Fang Liu - Guilderland NY, US
David L. O'Meara - Albany NY, US
David Rosenthal - Fishkill NY, US
Masanobu Igeta - Hillsboro OR, US
Cory Wajda - Sand Lake NY, US
Gerrit J. Leusink - Rexford NY, US
International Classification:

H01L 23/532
H01L 21/285
H01L 21/3213
H01L 21/768
C23C 16/455
C23C 16/16
C23C 16/56
Abstract:

A method is provided for void-free Ru metal filling of features in a substrate. The method includes providing a substrate containing features, depositing a Ru metal layer in the features, removing the Ru metal layer from a field area around an opening of the features, and depositing additional Ru metal in the features, where the additional Ru metal is deposited in the features at a higher rate than on the field area. According to one embodiment, the additional Ru metal is deposited until the features are fully filled with Ru metal.

Masanobu Igeta