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Mark Mcelhinney

age ~58

from Marana, AZ

Mark Mcelhinney Phones & Addresses

  • 3797 Cayton Mountain Dr, Marana, AZ 85658 • 520 229-3344
  • 11471 Charoleau Dr, Oro Valley, AZ 85737 • 520 229-3344
  • 7759 Silverbell Rd, Tucson, AZ 85743
  • 6600 Sherman Lake Rd, Hugo, MN 55038 • 651 407-0825
  • Lino Lakes, MN
  • Pima, AZ

Work

  • Company:
    Adc telecommunications
    Jul 1999 to Jan 2003
  • Position:
    Director of engineering

Education

  • Degree:
    Doctorates, Doctor of Philosophy
  • School / High School:
    University of Glasgow
    1990 to 1994
  • Specialities:
    Engineering

Industries

Electrical/Electronic Manufacturing
Name / Title
Company / Classification
Phones & Addresses
Mark Mcelhinney
President
LASERTEL INC
Mfg Electrical Equipment/Supplies Mfg Semiconductors/Related Devices Mfg Electromedical Equipment · Mfg Electrical Equipment/Supplies Semiconductors/Related Devices and Electromedical Equipment · Semiconductors and Related Devices · Printing Machinery & Equip Mfg
7775 N Casa Grande Hwy, Tucson, AZ 85743
520 744-5700, 520 744-5766, 877 844-1444, 520 744-5759

Resumes

Mark Mcelhinney Photo 1

President

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Location:
7775 north Casa Grande Hwy, Tucson, AZ 85743
Industry:
Electrical/Electronic Manufacturing
Work:
Adc Telecommunications Jul 1999 - Jan 2003
Director of Engineering

Lasertel Jul 1999 - Jan 2003
President

Spectracom Jan 1997 - Jul 1999
Technical Director

Pirelli 1994 - Jan 1997
Mbe Engineer

Freescale Semiconductor Sep 1989 - Nov 1990
Device Engineer
Education:
University of Glasgow 1990 - 1994
Doctorates, Doctor of Philosophy, Engineering
University of Glasgow 1984 - 1989
Bachelor of Engineering, Bachelors, Engineering

Us Patents

  • Semiconductor Lasers Having Single Crystal Mirror Layers Grown Directly On Facet

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  • US Patent:
    6590920, Jul 8, 2003
  • Filed:
    Oct 8, 1998
  • Appl. No.:
    09/168600
  • Inventors:
    Mark McElhinney - White Bear Lake MN
    Paul Colombo - St. Paul MN
  • Assignee:
    ADC Telecommunications, Inc. - Eden Prairie MN
  • International Classification:
    H01S 500
  • US Classification:
    372 49
  • Abstract:
    A semiconductor laser with improved device characteristics and novel protection against high power output degradation is disclosed. The laser comprises a plurality of layers deposited on a substrate, including an active layer with neighboring cladding layers, so as to define a waveguide, said waveguide having opposing end surfaces. A single crystal mirror layer is formed directly on at least one of the end surfaces, providing improved device characteristics and a longer life time for high power output applications. The mirror layer has sufficient thickness and is made of a material having a refractive index sufficiently different from that of the active layer to substantially modify the reflectivity of the first end surface. In a preferred embodiment, the laser is an AlGaAs laser designed to operate at 980 nm, and the single crystal mirror layer comprises a large band gap material, such as ZnSe, MgS, or BeTe.
  • Apparatus And Method For Batch Processing Semiconductor Substrates In Making Semiconductor Lasers

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  • US Patent:
    6673699, Jan 6, 2004
  • Filed:
    Jul 30, 2002
  • Appl. No.:
    10/208366
  • Inventors:
    Kevin J. Hubbard - Vadnais Heights MN
    Mark McElhinney - Vadnais Heights MN
    Scott W. Priddy - St. Paul MN
    Paul E. Colombo - St. Paul MN
  • Assignee:
    ADC Telecommunications, Inc. - Eden Prairie MN
  • International Classification:
    H01L 21301
  • US Classification:
    438460, 438 33, 438462
  • Abstract:
    An apparatus and method for batch processing semiconductor lasers producing substantially contamination free laser bar end surfaces for optimal growth of end surface layers are provided. The method includes loading a laser cell comprising a plurality of laser bars and an empty cassette capable of holding a plurality of laser bars into a cleaving chamber and pumping the cleaving chamber down to a desired pressure. Next, a cleaving cycle is performed in which an end laser bar is cleaved off the laser cell. The laser bar is deposited in the cassette, while the laser cell is positioned for a subsequet operation. The cleaving cycle repeats until a plurality of laser bars are cleaved off the laser cell and loaded into the cassette. The cassette is then moved into a deposition chamber where a layer of material is deposited on at least one end surface of all of the laser bars in the cassette.
  • Raman Amplifier With High Power Distribution Bypass

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  • US Patent:
    6806998, Oct 19, 2004
  • Filed:
    Mar 20, 2002
  • Appl. No.:
    10/103161
  • Inventors:
    Edward C. Gage - Apple Valley MN
    Mark McElhinney - Lino Lakes MN
  • Assignee:
    ADC Telecommunications, Inc. - Eden Prairie MN
  • International Classification:
    H01S 300
  • US Classification:
    359333, 359334
  • Abstract:
    An optical communications control station includes an equipment rack and a fiber frame for interfacing between the fiber communications link and the equipment in the rack. Raman pump lasers in the equipment rack produce a Raman pump output that bypasses the fiber frame and is coupled directly into the fiber communications link. The number of connectorized components that the pump light passes through is reduced, thus reducing the possibility of damaging fiber connections by passing the high power Raman pump light through fiber connections. The approach also reduces the possibility of an operator being inadvertently exposed to the high power Raman pump light, thus increasing operator safety.
  • Semiconductor Optical Device Having Asymmetric Ridge Waveguide And Method Of Making Same

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  • US Patent:
    7076130, Jul 11, 2006
  • Filed:
    Sep 8, 2003
  • Appl. No.:
    10/657807
  • Inventors:
    Li Cai - Fayetteville AR, US
    James M. VanHove - Superior CO, US
    Mark McElhinney - Oro Valley AZ, US
  • Assignee:
    ADC Telecommunications, Inc. - Eden Prairie MN
  • International Classification:
    G02B 6/26
  • US Classification:
    385 31, 372 4301
  • Abstract:
    In order to reduce the possibility of a laser operating in multiple transverse modes at high power, the laser is provided with laterally asymmetric losses that discriminate against modes higher than the fundamental mode. One approach to doing this is form an asymmetric ridge waveguide in the laser, that allows the light of the higher order modes to leak out of the waveguide.
  • Liquid Cooled Laser Bar Arrays Incorporating Diamond/Copper Expansion Matched Materials

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  • US Patent:
    7660335, Feb 9, 2010
  • Filed:
    Apr 17, 2008
  • Appl. No.:
    12/105126
  • Inventors:
    Prabhu Thiagarajan - Tucson AZ, US
    Mark McElhinney - Tucson AZ, US
    John J. Cahill - West Orange NJ, US
  • Assignee:
    Lasertel, Inc. - Tucson AZ
  • International Classification:
    H01S 3/04
  • US Classification:
    372 34, 372 35
  • Abstract:
    A laser diode array having a plurality of diode bars bonded by a hard solder to expansion matched spacers and mounted on a gas or liquid cooled heatsink. The spacers are formed of a material such as copper/diamond composite material having a thermal expansion that closely matches that of the laser bars.
  • Method And System For A Laser Diode Bar Array Assembly

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  • US Patent:
    7864825, Jan 4, 2011
  • Filed:
    Jul 26, 2007
  • Appl. No.:
    11/829030
  • Inventors:
    Prabhu Thiagarajan - Tucson AZ, US
    Mark McElhinney - Tucson AZ, US
    Jason Helmrich - Tucson AZ, US
    Feliks Lapinski - Tucson AZ, US
  • Assignee:
    Lasertel, Inc. - Tucson AZ
  • International Classification:
    H01S 3/04
  • US Classification:
    372 36, 372 34, 257E33075, 257701, 257706, 438 34
  • Abstract:
    A laser diode array is formed on a heat sink having an insulating layer in which a plurality of grooves is formed through the ceramic layer and to or into the heat sink. A laser diode stack is soldered to the ceramic layer.
  • Liquid Cooled Laser Bar Arrays Incorporating Diamond/Copper Expansion Matched Materials

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  • US Patent:
    7944955, May 17, 2011
  • Filed:
    Dec 28, 2009
  • Appl. No.:
    12/648141
  • Inventors:
    Prabhu Thiagarajan - Tucson AZ, US
    Mark McElhinney - Tucson AZ, US
    John J. Cahill - West Orange NJ, US
  • Assignee:
    Lasertel, Inc. - Tucson AZ
  • International Classification:
    H01S 3/04
  • US Classification:
    372 34, 372 36
  • Abstract:
    A laser diode array having a plurality of diode bars bonded by a hard solder to expansion matched spacers and mounted on a gas or liquid cooled heatsink. The spacers are formed of a material such as copper/diamond composite material having a thermal expansion that closely matches that of the laser bars.
  • Apparatus And Method For Batch Processing Semiconductor Substrates In Making Semiconductor Lasers

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  • US Patent:
    6451120, Sep 17, 2002
  • Filed:
    Sep 21, 2000
  • Appl. No.:
    09/667068
  • Inventors:
    Kevin J. Hubbard - Vadnais Heights MN
    Mark McElhinney - Vadnais Heights MN
    Scott W. Priddy - St. Paul MN
    Paul E. Colombo - St. Paul MN
  • Assignee:
    ADC Telecommunications, Inc. - Eden Prairie MN
  • International Classification:
    C23C 1600
  • US Classification:
    118719, 118723 VE, 118 33, 225 6, 225 23, 225 51, 225 82, 225 93, 148DIG 28
  • Abstract:
    An apparatus and method for batch processing semiconductor lasers producing substantially contamination free laser bar end surfaces for optimal growth of end surface layers are provided. The method includes loading a laser cell comprising a plurality of laser bars and an empty cassette capable of holding a plurality of laser bars into a cleaving chamber and pumping the cleaving chamber down to a desired pressure. Next, a cleaving cycle is performed in which an end laser bar is cleaved off the laser cell. The laser bar is deposited in the cassette, while the laser cell is positioned for a subsequent operation. The cleaving cycle repeats until a plurality of laser bars are cleaved off the laser cell and loaded into the cassette. The cassette is then moved into a deposition chamber where a layer of material is deposited on at least one end surface of all of the laser bars in the cassette.

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Mark McElhinney Highland...

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Mark McElhinney 1972 graduate of Highlands High School in Ft. thomas, KY is on Memory Lane. Get caught up with Mark and other high school alumni from

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Mark Mcelhinney

Work:
SMART Technologies - Senior Software Developer (2003)
Education:
University of Alberta - BSc Computing Science

Plaxo

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Mcelhinney Media

Flickr

Facebook

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Youtube

Mark McElhinney Richard Petty Vegas Speedway....

12 laps around Las Vegas Speedway Mark McElhinney.

  • Duration:
    10m 23s

Mark McElhinney I feel the need the need for ...

Speed skiing the Mac way lol. Mark McElhinney.

  • Duration:
    1m 24s

The Mark Steyn Show: Ann McElhinney and Pheli...

We're proud to present a brand new edition of The Mark Steyn Show. Tod...

  • Duration:
    1h 2m 7s

The Mark Steyn Show with Ann McElhinney and P...

Here's another episode of The Mark Steyn Show, featuring Ann McElhinne...

  • Duration:
    1h 6m 39s

Top 5 Curtis McElhinney saves from 2018-19

We count down the top five highlight-reel saves in 2018-19 from goalte...

  • Duration:
    2m 47s

Falling on the Red Route

Mark McElhinney, Cheryl Mills and Rachel Blundell tackle red ski route...

  • Duration:
    12m 49s

Myspace

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Mark McElhinney

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Locality:
South Australia, Australien
Birthday:
1922

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