Adc Telecommunications Jul 1999 - Jan 2003
Director of Engineering
Lasertel Jul 1999 - Jan 2003
President
Spectracom Jan 1997 - Jul 1999
Technical Director
Pirelli 1994 - Jan 1997
Mbe Engineer
Freescale Semiconductor Sep 1989 - Nov 1990
Device Engineer
Education:
University of Glasgow 1990 - 1994
Doctorates, Doctor of Philosophy, Engineering
University of Glasgow 1984 - 1989
Bachelor of Engineering, Bachelors, Engineering
Us Patents
Semiconductor Lasers Having Single Crystal Mirror Layers Grown Directly On Facet
Mark McElhinney - White Bear Lake MN Paul Colombo - St. Paul MN
Assignee:
ADC Telecommunications, Inc. - Eden Prairie MN
International Classification:
H01S 500
US Classification:
372 49
Abstract:
A semiconductor laser with improved device characteristics and novel protection against high power output degradation is disclosed. The laser comprises a plurality of layers deposited on a substrate, including an active layer with neighboring cladding layers, so as to define a waveguide, said waveguide having opposing end surfaces. A single crystal mirror layer is formed directly on at least one of the end surfaces, providing improved device characteristics and a longer life time for high power output applications. The mirror layer has sufficient thickness and is made of a material having a refractive index sufficiently different from that of the active layer to substantially modify the reflectivity of the first end surface. In a preferred embodiment, the laser is an AlGaAs laser designed to operate at 980 nm, and the single crystal mirror layer comprises a large band gap material, such as ZnSe, MgS, or BeTe.
Apparatus And Method For Batch Processing Semiconductor Substrates In Making Semiconductor Lasers
Kevin J. Hubbard - Vadnais Heights MN Mark McElhinney - Vadnais Heights MN Scott W. Priddy - St. Paul MN Paul E. Colombo - St. Paul MN
Assignee:
ADC Telecommunications, Inc. - Eden Prairie MN
International Classification:
H01L 21301
US Classification:
438460, 438 33, 438462
Abstract:
An apparatus and method for batch processing semiconductor lasers producing substantially contamination free laser bar end surfaces for optimal growth of end surface layers are provided. The method includes loading a laser cell comprising a plurality of laser bars and an empty cassette capable of holding a plurality of laser bars into a cleaving chamber and pumping the cleaving chamber down to a desired pressure. Next, a cleaving cycle is performed in which an end laser bar is cleaved off the laser cell. The laser bar is deposited in the cassette, while the laser cell is positioned for a subsequet operation. The cleaving cycle repeats until a plurality of laser bars are cleaved off the laser cell and loaded into the cassette. The cassette is then moved into a deposition chamber where a layer of material is deposited on at least one end surface of all of the laser bars in the cassette.
Raman Amplifier With High Power Distribution Bypass
Edward C. Gage - Apple Valley MN Mark McElhinney - Lino Lakes MN
Assignee:
ADC Telecommunications, Inc. - Eden Prairie MN
International Classification:
H01S 300
US Classification:
359333, 359334
Abstract:
An optical communications control station includes an equipment rack and a fiber frame for interfacing between the fiber communications link and the equipment in the rack. Raman pump lasers in the equipment rack produce a Raman pump output that bypasses the fiber frame and is coupled directly into the fiber communications link. The number of connectorized components that the pump light passes through is reduced, thus reducing the possibility of damaging fiber connections by passing the high power Raman pump light through fiber connections. The approach also reduces the possibility of an operator being inadvertently exposed to the high power Raman pump light, thus increasing operator safety.
Semiconductor Optical Device Having Asymmetric Ridge Waveguide And Method Of Making Same
Li Cai - Fayetteville AR, US James M. VanHove - Superior CO, US Mark McElhinney - Oro Valley AZ, US
Assignee:
ADC Telecommunications, Inc. - Eden Prairie MN
International Classification:
G02B 6/26
US Classification:
385 31, 372 4301
Abstract:
In order to reduce the possibility of a laser operating in multiple transverse modes at high power, the laser is provided with laterally asymmetric losses that discriminate against modes higher than the fundamental mode. One approach to doing this is form an asymmetric ridge waveguide in the laser, that allows the light of the higher order modes to leak out of the waveguide.
Liquid Cooled Laser Bar Arrays Incorporating Diamond/Copper Expansion Matched Materials
Prabhu Thiagarajan - Tucson AZ, US Mark McElhinney - Tucson AZ, US John J. Cahill - West Orange NJ, US
Assignee:
Lasertel, Inc. - Tucson AZ
International Classification:
H01S 3/04
US Classification:
372 34, 372 35
Abstract:
A laser diode array having a plurality of diode bars bonded by a hard solder to expansion matched spacers and mounted on a gas or liquid cooled heatsink. The spacers are formed of a material such as copper/diamond composite material having a thermal expansion that closely matches that of the laser bars.
Method And System For A Laser Diode Bar Array Assembly
Prabhu Thiagarajan - Tucson AZ, US Mark McElhinney - Tucson AZ, US Jason Helmrich - Tucson AZ, US Feliks Lapinski - Tucson AZ, US
Assignee:
Lasertel, Inc. - Tucson AZ
International Classification:
H01S 3/04
US Classification:
372 36, 372 34, 257E33075, 257701, 257706, 438 34
Abstract:
A laser diode array is formed on a heat sink having an insulating layer in which a plurality of grooves is formed through the ceramic layer and to or into the heat sink. A laser diode stack is soldered to the ceramic layer.
Liquid Cooled Laser Bar Arrays Incorporating Diamond/Copper Expansion Matched Materials
Prabhu Thiagarajan - Tucson AZ, US Mark McElhinney - Tucson AZ, US John J. Cahill - West Orange NJ, US
Assignee:
Lasertel, Inc. - Tucson AZ
International Classification:
H01S 3/04
US Classification:
372 34, 372 36
Abstract:
A laser diode array having a plurality of diode bars bonded by a hard solder to expansion matched spacers and mounted on a gas or liquid cooled heatsink. The spacers are formed of a material such as copper/diamond composite material having a thermal expansion that closely matches that of the laser bars.
Apparatus And Method For Batch Processing Semiconductor Substrates In Making Semiconductor Lasers
An apparatus and method for batch processing semiconductor lasers producing substantially contamination free laser bar end surfaces for optimal growth of end surface layers are provided. The method includes loading a laser cell comprising a plurality of laser bars and an empty cassette capable of holding a plurality of laser bars into a cleaving chamber and pumping the cleaving chamber down to a desired pressure. Next, a cleaving cycle is performed in which an end laser bar is cleaved off the laser cell. The laser bar is deposited in the cassette, while the laser cell is positioned for a subsequent operation. The cleaving cycle repeats until a plurality of laser bars are cleaved off the laser cell and loaded into the cassette. The cassette is then moved into a deposition chamber where a layer of material is deposited on at least one end surface of all of the laser bars in the cassette.