Mark R Kimmich

US Patent:

20170267521, Sep 21, 2017

Filed:

Mar 17, 2016

Appl. No.:

15/072852

Inventors:

- Dallas TX, US
Mona Eissa - Allen TX, US
Byron J.R. Shulver - Richardson TX, US
Sopa Chevacharoenkul - Richardson TX, US
Mark R. Kimmich - Frisco TX, US
Sudtida Lavangkul - Richardson TX, US
Mark L. Jenson - Allen TX, US

International Classification:

B81C 1/00
G01R 33/04
G01R 33/00

Abstract:

A method comprises forming an etch stop layer, a first titanium layer, a magnetic core, a second titanium layer, and patterning the first and second titanium layers. The etch stop layer is formed above a substrate. The first titanium layer is formed on the etch stop layer. The magnetic core is formed on the first titanium layer. The second titanium layer has a first portion encapsulating the magnetic core with the first titanium layer, and a second portion interfacing with the first titanium layer beyond the magnetic core. The patterning of the first and second titanium layers includes forming a mask over a magnetic core region and etching the first and second titanium layers exposed by the mask using a titanium etchant and a titanium oxide etchant.

US Patent:

20170213956, Jul 27, 2017

Filed:

Jan 22, 2016

Appl. No.:

15/003856

Inventors:

- Dallas TX, US
Mark R. Kimmich - Frisco TX, US
Sudtida Lavangkul - Richardson TX, US
Sopa Chevacharoenkul - Richardson TX, US
Mark L. Jenson - Allen TX, US

International Classification:

H01L 43/02
H01L 43/10
H01L 43/12
H01L 27/22

Abstract:

An integrated circuit has a substrate, a circuit, a core structure, a first encapsulation layer, a second encapsulation layer, and an oxide layer. The circuit includes transistors with active regions developed on the substrate and a metal layer formed above the active regions to provide interconnections for the transistors. The core structure is formed above the metal layer. The first encapsulation layer covers the core structure, and it has a first thermal expansion coefficient. The second encapsulation layer covers the first encapsulation layer over the core structure, and it has a second thermal expansion coefficient that is different from the first thermal expansion coefficient. As a part of the stress relief structure, the oxide layer is formed above the second encapsulation layer. The oxide layer includes an oxide thickness sufficient to mitigate a thermal stress between the first and second encapsulation layers.