Margaret A Frerking

US Patent:

52784444, Jan 11, 1994

Filed:

Feb 26, 1992

Appl. No.:

7/842297

Inventors:

Udo Lieneweg - Altadena CA
Margaret A. Frerking - La Canada CA
Joseph Maserjian - Valencia CA

Assignee:

The United States of America as represented by the Administrator of the
National Aeronautics and Space Administration - Washington DC

International Classification:

H01L 2990

US Classification:

257476

Abstract:

A planar frequency tripler comprised of two semiconductor diode structures connected back-to-back by an n. sup. + doped layer (N. sup. +) of semiconductor material utilizes an n doped semiconductor material for a drift region (N) over the back contact layer in order to overcome a space charge limitation in the drift region. A barrier layer (B) is grown over the drift region, after a sheet of n-type doping (N. sub. sheet) which forms a positive charge over the drift region, N, to internally bias the diode structure. Two metal contacts are deposited over the barrier layer, B, with a gap between them. To increase the power output of the diodes of a given size, stacked diodes may be provided by alternating barrier layers and drift region layers, starting with a barrier layer and providing a positive charge sheet at the interface of a barrier on both sides of each drift region layer with n-type. delta. doping. The stacked diodes may be isolated by etching or ion implantation to the back contact layer N. sup. + and a separate metal contact deposited on each stacked diode.