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Marco F Aimi

age ~45

from Schenectady, NY

Also known as:
  • Marco Francesco Aimi
  • Marco Ami
  • Ami Marco

Marco Aimi Phones & Addresses

  • Schenectady, NY
  • Albany, NY
  • Williston, VT
  • Goleta, CA
  • Troy, NY
  • Brooklyn, NY
  • 1209 Ferry Rd, Schenectady, NY 12309

Work

  • Company:
    General electric
    Jun 2005
  • Position:
    Materials engineer

Education

  • School / High School:
    University of California, Santa Barbara
    2001 to 2005

Skills

Research • Design

Industries

Research

Us Patents

  • Metal Mems Devices And Methods Of Making Same

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  • US Patent:
    7166488, Jan 23, 2007
  • Filed:
    Apr 14, 2004
  • Appl. No.:
    10/823559
  • Inventors:
    Noel C. MacDonald - Santa Barbara CA, US
    Marco F. Aimi - Goleta CA, US
  • Assignee:
    The Regents of the University of California - Oakland CA
  • International Classification:
    H01L 21/00
  • US Classification:
    438 52, 438 53, 257E21218
  • Abstract:
    Metal MEMS structures are fabricated from metal substrates, preferably titanium, utilizing micromachining processes with a new deep etching procedure to provide released microelectromechanical devices. The deep etch procedure includes metal anisotropic reactive ion etching utilizing repetitive alternating steps of etching and side wall protection. Variations in the timing of the etching and protecting steps produces walls of different roughness and taper. The metal wafers can be macomachined before forming the MEMS structures, and the resulting wafers can be stacked and bonded in packages.
  • Architecture And Method Of Fabrication For A Liquid Metal Microswitch (Limms)

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  • US Patent:
    7358452, Apr 15, 2008
  • Filed:
    Jun 30, 2005
  • Appl. No.:
    11/171610
  • Inventors:
    Timothy Beerling - San Francisco CA, US
    Steven A. Rosenau - Mountain View CA, US
    Benjamin P. Law - Fremont CA, US
    Ronald Shane Fazzio - Loveland CO, US
    Marco Aimi - Menands NY, US
  • Assignee:
    Agilent Technlolgies, Inc. - Santa Clara CA
  • International Classification:
    H01H 29/00
  • US Classification:
    200182, 200191, 200228
  • Abstract:
    A switch comprises a first wafer having a thin-film structure defined thereon, a second wafer having a plurality of features defined therein, and a seal between the first wafer and the second wafer forming a two-wafer structure having a liquid metal microswitch defined therebetween.
  • High-Temperature Pressure Sensor And Method Of Assembly

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  • US Patent:
    7559701, Jul 14, 2009
  • Filed:
    Mar 19, 2007
  • Appl. No.:
    11/687931
  • Inventors:
    Aaron Jay Knobloch - Mechanicville NY, US
    David Mulford Shaddock - Troy NY, US
    David Richard Esler - Mayfield NY, US
    Marco Francesco Aimi - Niskayuna NY, US
    Douglas S. Byrd - Greer SC, US
    David Robert O'Connor - Mississauga, CA
    Stacey Joy Kennerly - Albany NY, US
  • Assignee:
    General Electric Company - Schenectady NY
  • International Classification:
    G02B 6/36
    G01B 9/02
  • US Classification:
    385 88, 356454
  • Abstract:
    A method for assembling a Fabry-Perot interferometer includes depositing a first metal layer on an end portion of a ferrule, depositing a second metal layer on a back portion of a die, placing the first metal layer and the second metal layer in contact with each other with respective first and second orifices aligned with respect to each other, and bonding the ferrule to the die by thermo compression. The resulting interferometer includes a glass die with a cavity, a silicon diaphragm disposed over the opening of the cavity and bonded to the glass die, a ferrule bonded to the glass die by thermo compression with the first and second orifices being aligned to each other, and an optical fiber inserted through the other end of the ferrule in direct contact to a back portion of the die and aligned with the first orifice.
  • Metal Mems Devices And Methods Of Making Same

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  • US Patent:
    7569411, Aug 4, 2009
  • Filed:
    Jan 22, 2007
  • Appl. No.:
    11/625758
  • Inventors:
    Noel C. MacDonald - Santa Barbara CA, US
    Marco F. Aimi - Goleta CA, US
  • Assignee:
    The Regents of the University of California - Oakland CA
  • International Classification:
    H01L 22/00
  • US Classification:
    438 52, 257414, 257734, 257E23094, 257E23001, 438411, 438461, 438611, 438 49, 438 48
  • Abstract:
    Metal MEMS structures are fabricated from metal substrates, preferably titanium, utilizing micromachining processes with a new deep etching procedure to provide released microelectromechanical devices. The deep etch procedure includes metal anisotropic reactive ion etching utilizing repetitive alternating steps of etching and side wall protection. Variations in the timing of the etching and protecting steps produces walls of different roughness and taper. The metal wafers can be macomachined before forming the MEMS structures, and the resulting wafers can be stacked and bonded in packages.
  • Sealed Wafer Packaging Of Microelectromechanical Systems

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  • US Patent:
    7605466, Oct 20, 2009
  • Filed:
    Oct 15, 2007
  • Appl. No.:
    11/872562
  • Inventors:
    Marco Francesco Aimi - Niskayuna NY, US
    Christopher James Kapusta - Delanson NY, US
    Arun Virupaksha Gowda - Niskayuna NY, US
    David Cecil Hays - Niskayuna NY, US
    Oliver Charles Boomhower - Waterford NY, US
    Glenn Scott Claydon - Wynantskill NY, US
    Joseph Alfred Iannotti - Glenville NY, US
    Christopher Fred Keimel - Schenectady NY, US
  • Assignee:
    General Electric Company - Niskayuna NY
  • International Classification:
    H01L 23/34
  • US Classification:
    257723, 257E2301, 438107
  • Abstract:
    Multiple microelectromechanical systems (MEMS) on a substrate are capped with a cover using a layer that may function as a bonding agent, separation layer, and hermetic seal. A substrate has a first side with multiple MEMS devices. A cover is formed with through-holes for vias, and with standoff posts for layer registration and separation. An adhesive sheet is patterned with cutouts for the MEMS devices, vias, and standoff posts. The adhesive sheet is tacked to the cover, then placed on the MEMS substrate and heated to bond the layers. The via holes may be metalized with leads for circuit board connection. The MEMS units may be diced from the substrate after sealing, thus protecting them from contaminants.
  • Mems Microswitch Having A Conductive Mechanical Stop

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  • US Patent:
    7609136, Oct 27, 2009
  • Filed:
    Dec 20, 2007
  • Appl. No.:
    11/961767
  • Inventors:
    Xuefeng Wang - Schenectady NY, US
    Christopher Fred Keimel - Schenectady NY, US
    Marco Francesco Aimi - Niskayuna NY, US
    Kuna Venkat Satya Rama Kishore - Bangalore, IN
    Glenn Scott Claydon - Wynantskill NY, US
    Oliver Charles Boomhower - Waterford NY, US
    Parag Thakre - Bangalore, IN
  • Assignee:
    General Electric Company - Niskayuna NY
  • International Classification:
    H01H 51/22
  • US Classification:
    335 78, 200181
  • Abstract:
    A MEMS switch includes a substrate, a movable actuator coupled to the substrate, a substrate contact, a substrate electrode, and a conductive stopper electrically coupled to the movable actuator and structured to prevent the movable actuator from contacting the substrate electrode while allowing the movable actuator to make contact with the substrate contact.
  • Three-Dimensional Metal Microfabrication Process And Devices Produced Thereby

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  • US Patent:
    7682956, Mar 23, 2010
  • Filed:
    Jun 1, 2006
  • Appl. No.:
    11/445067
  • Inventors:
    Masaru P. Rao - Santa Barbara CA, US
    Marco F. Aimi - Menands NY, US
    Noel C. MacDonald - Santa Barbara CA, US
  • Assignee:
    The Regents of the University of California - Oakland CA
  • International Classification:
    H01L 21/3205
    H01L 21/4763
  • US Classification:
    438595, 438763, 257E2132, 257E21218, 257E21227, 257E21229, 257E21231, 257E21245, 257E21253, 257E21278
  • Abstract:
    The present invention relates, in general, to a method for three-dimensional (3D) microfabrication of complex, high aspect ratio structures with arbitrary surface height profiles in metallic materials, and to devices fabricated in accordance with this process. The method builds upon anisotropic deep etching methods for metallic materials previously developed by the inventors by enabling simplified realization of complex, non-prismatic structural geometries composed of multiple height levels and sloping and/or non-planar surface profiles. The utility of this approach is demonstrated in the fabrication of a sloping electrode structure intended for application in bulk micromachined titanium micromirror devices, however such a method could find use in the fabrication of any number of other microactuator, microsensor, microtransducer, or microstructure devices as well.
  • Mems Switch With Improved Standoff Voltage Control

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  • US Patent:
    7692519, Apr 6, 2010
  • Filed:
    Dec 21, 2007
  • Appl. No.:
    11/962178
  • Inventors:
    William James Premerlani - Scotia NY, US
    Christopher Fred Keimel - Schenectady NY, US
    Xuefeng Wang - Schenectady NY, US
    Marco Francesco Aimi - Niskayuna NY, US
  • Assignee:
    General Electric Company - Niskayuna NY
  • International Classification:
    H01P 1/10
    H01H 57/00
  • US Classification:
    333262, 333105
  • Abstract:
    A MEMS switch is provided including a substrate, a movable actuator coupled to the substrate and having a first side and a second side, a first fixed electrode coupled to the substrate and positioned on the first side of the movable actuator to generate a first actuation force to pull the movable actuator toward a conduction state, and a second fixed electrode coupled to the substrate and positioned on the second side of the movable actuator to generate a second actuation force to pull the movable actuator toward a non-conducting state.

Resumes

Marco Aimi Photo 1

Technology Manager - Microsystems

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Location:
1209 Ferry Rd, Schenectady, NY 12309
Industry:
Research
Work:
General Electric since Jun 2005
Materials Engineer
Education:
University of California, Santa Barbara 2001 - 2005
Rensselaer Polytechnic Institute 1997 - 2001
BS, Materials Engineering, Mechanical Engineering
Skills:
Research
Design

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Marco Aimi Photo 2

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Marco Aimi Photo 3

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