Luisa D Bozano

US Patent:

7151029, Dec 19, 2006

Filed:

Jun 14, 2005

Appl. No.:

11/151007

Inventors:

Luisa Dominica Bozano - Los Gatos CA, US
Kenneth Raymond Carter - San Jose CA, US
John Campbell Scott - Los Gatos CA, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/336
G11C 11/00

US Classification:

438257, 257 5104, 365148, 365100

Abstract:

A multi-stable memory or data storage element is used in crosspoint data-storage arrays, as a switch, a memory device, or as a logical device. The general structure of the multi-stable element comprises a layered, composite medium that both transports and stores charge disposed between two electrodes. Dispersed within the composite medium are discrete charge storage particles that trap and store charge. The multi-stable element achieves an exemplary bi-stable characteristic, providing a switchable device that has two or more stable states reliably created by the application of a voltage to the device. The voltages applied to achieve the “on” state, the “off” state, any intermediate state, and to read the state of the multi-stable element are all of the same polarity.

US Patent:

8426113, Apr 23, 2013

Filed:

Aug 13, 2010

Appl. No.:

12/856338

Inventors:

Luisa Dominica Bozano - Los Gatos CA, US
Blake W. Davis - Hollister CA, US
Alshakim Nelson - Fremont CA, US
Jitendra Singh Rathore - Campbell CA, US
Linda Karin Sundberg - Los Gatos CA, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F 7/075
G03F 7/038
G03F 7/20
G03F 7/30
G03F 7/40

US Classification:

430311, 430325, 430328, 430330, 430331, 430905, 430919, 430920, 430921, 430923, 430925, 430942

Abstract:

The present invention provides chemically amplified silsesquioxane polymers for preparing masks using e-beam lithography. The silsesquioxane polymers have reactive sidechains that in the presence of an acid undergo acid catalyzed rearrangement to generate reactive functionalities that crosslink to form Si—O—Si bonds. The reactive side-chains comprise β- and γ-substituted alkyl groups bound to the silicon of the silsesquioxane polymer. The substituent of the β- and γ-substituted alkyl group is an electron withdrawing group. Resists generated with the chemically amplified silsesquioxane polymers of the present invention and imaged with e-beams have resolution of ≦60 nm line/space.

US Patent:

8470516, Jun 25, 2013

Filed:

Aug 18, 2009

Appl. No.:

12/542821

Inventors:

Robert D. Allen - San Jose CA, US
Luisa Bozano - Los Gatos CA, US
Phillip Brock - Sunnyvale CA, US
Qinghuang Lin - Yorktown Heights NY, US
Alshakim Nelson - Fremont CA, US
Ratnam Sooriyakumaran - San Jose CA, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F 7/00
G03F 7/26

US Classification:

430306

Abstract:

A method of generating a relief pattern comprises disposing a resist composition on a substrate to form a film, the resist composition comprising a first silsesquioxane polymer of the formula (1):.

US Patent:

8530136, Sep 10, 2013

Filed:

Dec 17, 2010

Appl. No.:

12/971292

Inventors:

Luisa D. Bozano - Los Gatos CA, US
Gregory Breyta - San Jose CA, US
Ekmini A. DeSilva - Ossining NY, US
William D. Hinsberg - Fremont CA, US
Ratnam Sooriyakumaran - San Jose CA, US
Linda K. Sundberg - Los Gatos CA, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F 7/004
G03F 7/20
G03F 7/30
G03F 7/38

US Classification:

4302701, 430311, 430325, 430326, 430330, 430907, 558268, 568720

Abstract:

Phenolic molecular glasses such as calixarenes include at least one fluoroalcohol containing unit. The fluoroalcohol containing molecular glasses can be used in photoresist compositions. Also disclosed are processes for generating a resist image on a substrate using the photoresist composition.

US Patent:

7993812, Aug 9, 2011

Filed:

Jul 23, 2009

Appl. No.:

12/507968

Inventors:

Luisa D. Bozano - Los Gatos CA, US
Hiroshi Ito - San Jose CA, US
Atsuko Ito, legal representative - San Jose CA, US
Linda K. Sundberg - Los Gatos CA, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F 7/004
G03F 7/30

US Classification:

4302701, 430326, 430905

Abstract:

Photoresist compositions include a blend of at least one fully protected calix[4]resorcinarene and at least one unprotected calix[4]resorcinarene, wherein the fully protected calix[4]resorcinarene has phenolic groups protected with acid labile protective groups; a photoacid generator; and a solvent, and wherein the blend and the photoacid generator are soluble in the solvent. Also disclosed are processes for generating a resist image on a substrate using the photoresist composition.

US Patent:

20050040455, Feb 24, 2005

Filed:

Aug 20, 2003

Appl. No.:

10/645240

Inventors:

Luisa Bozano - Los Gatos CA, US
Kenneth Carter - San Jose CA, US
John Scott - Los Gatos CA, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L029/76

US Classification:

257314000

Abstract:

A multi-stable memory or data storage element is used in crosspoint data-storage arrays, as a switch, a memory device, or as a logical device. The general structure of the multi-stable element comprises a layered, composite medium that both transports and stores charge disposed between two electrodes. Dispersed within the composite medium are discrete charge storage particles that trap and store charge. The multi-stable element achieves an exemplary bi-stable characteristic, providing a switchable device that has two or more stable states reliably created by the application of a voltage to the device. The voltages applied to achieve the “on” state, the “off” state, any intermediate state, and to read the state of the multi-stable element are all of the same polarity. The multi-stable element is stable, cyclable, and reproducible in both the “on” state and the “off” state. The storage medium has a relatively high resistance in both its on and off states. Consequently, a dense array can be fabricated without significant cross-talk between adjacent elements. No patterning of the layer of storage medium is required.

US Patent:

20130209922, Aug 15, 2013

Filed:

Feb 13, 2012

Appl. No.:

13/371999

Inventors:

Keiichi MASUNAGA - Joetsu-shi, JP
Satoshi WATANABE - Joetsu-shi, JP
Yoshio KAWAI - Joetsu-shi, JP
Luisa BOZANO - San Jose CA, US
Ratnam SOORIYAKUMARAN - San Jose CA, US

International Classification:

G03F 1/76
G03F 1/50
G03F 1/78
G03F 7/004

US Classification:

430 5, 4302811, 4302851

Abstract:

A polymer comprising recurring units having an acid-eliminatable group on a side chain and aromatic ring-bearing cyclic olefin units is used to formulate a chemically amplified negative resist composition. Any size shift between the irradiated pattern and the formed resist which can arise in forming a pattern including isolated feature and isolated space portions is reduced, and a high resolution is obtained.

US Patent:

20140038104, Feb 6, 2014

Filed:

Jul 31, 2012

Appl. No.:

13/562811

Inventors:

Luisa Dominica Bozano - Los Gatos CA, US
Takayuki Nagasawa - Joetsu-shi, JP
Mark Hull Sherwood - San Jose CA, US
Ratnam Sooriyakumaran - San Jose CA, US
Linda Karin Sundberg - Los Gatos CA, US
Satoshi Watanabe - Joetsu-shi, JP

Assignee:

SHIN-ETSU CHEMICAL CO., LTD. - Tokyo
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01B 1/12
G03F 7/11

US Classification:

4302731, 252500

Abstract:

A water dispersible composition comprises a polyaniline copolymer having a weight average molecular weight of at least 30,000 and a polymeric acid comprising sulfonic acid groups. The polyaniline copolymer comprises i) about 10 mol % to about 15 mol % of a fluorine-containing first aniline repeat unit based on total moles of repeat units in the polyaniline copolymer, and ii) a second aniline repeat unit comprising no fluorine. The sulfonic acid groups of the polymeric acid are present in a molar amount greater than or equal to total moles of repeat units of the polyaniline copolymer. The composition has a conductivity of at least 0.0001 S/cm.