Louis R Tomasetta

Author:

Louis R. Tomasetta

ISBN #:

0892523042

US Patent:

43148581, Feb 9, 1982

Filed:

Nov 23, 1979

Appl. No.:

6/096872

Inventors:

Louis R. Tomasetta - Thousand Oaks CA
H. David Law - Thousand Oaks CA

Assignee:

Rockwell International Corporation - El Segundo CA

International Classification:

H01L 3300
H01L 2714
H01L 29161

US Classification:

148 15

Abstract:

Disclosed is a fully integrated monolithic optical receiver and a method of manufacturing such a receiver, including the steps of providing a semi-insulating substrate having a major surface, growing an epitaxial layer of a first conductivity type over the major surface, selectively removing the epitaxial layer to establish a detector area defined by the remaining portion of the layer, selectively implanting a relatively heavily doped region of a first conductivity type in the epitaxial layer, selectively implanting a relatively heavily doped region of a second conductivity type in the epitaxial layer and spaced from the implanted region of the first conductivity type, selectively implanting a relatively heavily doped source region of the first conductivity type in the major surface of the substrate, selectively implanting a relatively heavily doped drain region of the first conductivity type in the major surface and spaced from the source region, selectively implanting a gate region of the first conductivity type between the source and drain regions, capping the receiver with an insulating layer, forming a plurality of metalization contacts through the insulating layer and in respective electrical contact with the regions of first and second conductivity type in the epitaxial layer and with the source, drain, and gate regions, and interconnecting the metalization contacts.