Linda C Matthew

US Patent:

6403892, Jun 11, 2002

Filed:

Jun 24, 1996

Appl. No.:

08/669598

Inventors:

Claudius Feger - Hopewell Junction NY
Teresita Ordonez Graham - Irvington NY
Kurt Rudolph Grebe - Beacon NY
Alphonso Philip Lanzetta - Marlboro NY
John Joseph Liutkus - Yorktown Heights NY
Linda Carolyn Matthew - Peekskill NY
Michael Jon Palmer - Walden NY
Nelson Russell Tanner - Harpursville NY
Ho-Ming Tong - Yorktown Heights NY
Charles Haile Wilson - Beckley WV
Helen Li Yeh - Katonah NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H05K 100

US Classification:

174254, 174260, 361773, 361750

Abstract:

A flex or TAB product suitable for chip carrier applications wherein the flex reliability problems caused by copper dendrite growth and lead bending during power and thermal cycling are reduced by application of special coatings to lead areas of the flex tape.

US Patent:

54626285, Oct 31, 1995

Filed:

Apr 25, 1994

Appl. No.:

8/232417

Inventors:

Alfred Viehbeck - Stormville NY
Martin Goldberg - Mahopac NY
Stephen L. Tisdale - Vestal NY
Stephen L. Buchwalter - Wappingers Falls NY
Kurt R. Grebe - Beacon NY
Caroline A. Kovac - Ridgefield CT
Linda C. Matthew - Peekskill NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B32B 3100

US Classification:

156281

Abstract:

Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material. The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons. The increased solubility allows openings to be etched in certain areas of the polymeric material that have been reduced, leaving other areas unchanged.

US Patent:

58008586, Sep 1, 1998

Filed:

Sep 12, 1996

Appl. No.:

8/711894

Inventors:

Harry Randall Bickford - Ossining NY
Peter J. Duke - Endwell NY
Elizabeth Foster - Friendsville PA
Martin Goldberg - San Jose CA
Voya Rista Markovich - Endwell NY
Linda Matthew - Palo Alto CA
Donald G. McBride - Binghamton NY
Terrence Robert O'Toole - Webster NY
Stephen Leo Tisdale - Endwell NY
Alfred Viehbeck - Fishkill NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B05D 512

US Classification:

427 97

Abstract:

A halogenated polymeric material is exposed to a reducing agent and/or an electrolyte and applied voltage to render exposed portions capable of being metallized and of being etched. The exposed portions can also be doped to thereby induce electrical conductivity therein. Also, new structures containing a free standing halogenated polymeric-containing layer and electrical conductive pattern thereon are provided.

US Patent:

52039552, Apr 20, 1993

Filed:

May 24, 1991

Appl. No.:

7/705648

Inventors:

Aldred Viehbeck - Stormville NY
Stephen L. Buchwalter - Wappingers Falls NY
John J. Glenning - Vestal NY
Martin J. Goldberg - Mahopac NY
Caroline A. Kovac - Ridgefield CT
Linda C. Matthew - Peekskill NY
Walter P. Pawlowski - Endicott NY
Stephen L. Tisdale - Vestal NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C25F 300

US Classification:

156628

Abstract:

Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material. The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons. The increased solubility allows openings to be etched in certain areas of the polymeric material that have been reduced, leaving other areas unchanged.

US Patent:

53609468, Nov 1, 1994

Filed:

Sep 17, 1991

Appl. No.:

7/761182

Inventors:

Claudius Feger - Hopewell Junction NY
Teresita O. Graham - Irvington NY
Kurt R. Grebe - Beacon NY
Alphonso P. Lanzetta - Marlboro NY
John J. Liutkus - Yorktown Heights NY
Linda C. Matthew - Peekskill NY
Michael J. Palmer - Walden NY
Nelson R. Tanner - Harpursville NY
Ho-Ming Tong - Yorktown Heights NY
Charles H. Wilson - Beckley WV
Helen L. Yeh - Katonah NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01R 909

US Classification:

174261

Abstract:

The present invention relates to an improved flex (or TAB) product suitable for silicon carrier or other types of chip carrier applications, wherein the flex reliability problems caused for example by Cu thermal cycling are substantially reduced or eliminated. More particularly, the invention embodies a number of coatings for use in such products and diverse methods of making and using same.

US Patent:

50381954, Aug 6, 1991

Filed:

Feb 9, 1990

Appl. No.:

7/477705

Inventors:

William D. Brewer - Berlin, DE
Kurt R. Grebe - Beacon NY
Raymond R. Horton - Dover Plains NY
Linda C. Matthew - Peekskill NY
Ismail C. Noyan - Peekskill NY
Michael J. Palmer - Walden NY
Sampath Purushothaman - Yorktown Heights NY
David L. Rath - Stormville NY

Assignee:

IBM - Yorktown Heights NY

International Classification:

M01L 2348

US Classification:

357 70

Abstract:

The present invention comprises the use of a copper/nickel containing alloy composition or application of a protective nickel alloy coating to copper current-carrying leads to prevent electrolytic migration between tape automated bonding (TAB) package leads.

US Patent:

53433661, Aug 30, 1994

Filed:

Jun 24, 1992

Appl. No.:

7/903838

Inventors:

Thomas M. Cipolla - Katonah NY
Paul W. Coteus - Yorktown Heights NY
Ioannis Damianakis - Montreal, CA
Glen W. Johnson - Yorktown Heights NY
Peter G. Ledermann - Peekskill NY
Linda C. Matthew - Peekskill NY
Lawrence S. Mok - Yorktown Heights NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01R 2368

US Classification:

361785

Abstract:

This invention relates to three dimensional packaging of integrated circuit chips into stacks to form cuboid structures. Between adjacent chips in the stack, there is disposed an electrical interconnection means which is a first substrate having a plurality of conductors one end of which is electrically connected to chip contact locations and the other end of which extends to one side of the chip stack to form a plurality of pin-like electrical interconnection assemblies. The pin-like structures can be formed from projections of the first substrate having an electrical conductor on at least one side thereof extending from this side. Alternatively, the pin-like structures can be formed from conductors which cantilever from both sides of an edge of the first substrate and within which corresponding conductors from both sides are aligned and spaced apart by the first substrate thickness. The spaces contain solder and form solder loaded pin-like structures. The pin-like structures can be directly solder bonded to conductors on a second substrate surface or the pin-like structures can be adapted for insertion into apertures in a second substrate.

US Patent:

52427137, Sep 7, 1993

Filed:

Dec 23, 1988

Appl. No.:

7/290486

Inventors:

Alfred Viehbeck - Stormville NY
Stephen L. Buchwalter - Wappingers Falls NY
William A. Donson - Endicott NY
John J. Glenning - Vestal NY
Martin J. Goldberg - Mahopac NY
Kurt R. Grebe - Beacon NY
Caroline A. Kovac - Ridgefield CT
Linda C. Matthew - Peekskill NY
Walter P. Pawlowski - Endicott NY
Mark J. Schadt - Vestal NY
Michael R. Scheuermann - Katonah NY
Stephen L. Tisdale - Vestal NY

Assignee:

International Business Machines Corporation

International Classification:

C23C 2600

US Classification:

427304

Abstract:

Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons. The increased solubility allows openings to be etched in certain areas of the polymeric material that have been reduced, leaving other areas unchanged.