Leon J Ashley

US Patent:

6348731, Feb 19, 2002

Filed:

Jan 29, 1999

Appl. No.:

09/240950

Inventors:

Leon Ashley - Danbury CT
Hormazdyar M. Dalal - Milton NY
Du Binh Nguyen - Danbury CT
Hazara S. Rathore - Stormville NY
Richard G. Smith - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2348

US Classification:

257751, 257752, 257760, 257763, 257768

Abstract:

A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is converted to an intermetallic layer. A layer of copper intermetallics with hafnium, lanthanum, zirconium or tin, is provided to improve the electromigration resistance and to reduce defect sensitivity. A method is also provided to form a cap atop copper lines, to improve corrosion resistance, which fully covers the surface. Structure and methods are also described to improve the electromigration and corrosion resistance by incorporating carbon atoms in copper interstitial positions.

US Patent:

62879545, Sep 11, 2001

Filed:

Dec 9, 1999

Appl. No.:

9/457960

Inventors:

Leon Ashley - Danbury CT
Hormazdyar M. Dalal - Milton NY
Du Binh Nguyen - Danbury CT
Hazara S. Rathore - Stormville NY
Richard G. Smith - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 214763

US Classification:

438622

Abstract:

A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is converted to an intermetallic layer. A layer of copper intermetallics with hafnium, lanthanum, zirconium or tin, is provided to improve the electromigration resistance and to reduce defect sensitivity. A method is also provided to form a cap atop copper lines, to improve corrosion resistance, which fully covers the surface. Structure and methods are also described to improve the electromigration and corrosion resistance by incorporating carbon atoms in copper interstitial positions.

US Patent:

61301612, Oct 10, 2000

Filed:

May 30, 1997

Appl. No.:

8/866777

Inventors:

Leon Ashley - Danbury CT
Hormazdyar M. Dalal - Milton NY
Du Binh Nguyen - Danbury CT
Hazara S. Rathore - Stormville NY
Richard G. Smith - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2348

US Classification:

438687

Abstract:

A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is converted to an intermetallic layer. A layer of copper intermetallics with halfnium, lanthanum, zirconium or tin, is provided to improve the electromigration resistance and to reduce defect sensitivity. A method is also provided to form a cap atop copper lines, to improve corrosion resistance, which fully covers the surface. Structure and methods are also described to improve the electromigration and corrosion resistance by incorporating carbon atoms in copper intersititial positions.