Le Thanh Pham

US Patent:

6927383, Aug 9, 2005

Filed:

Jul 26, 2002

Appl. No.:

10/207422

Inventors:

Andrew G. Toth - Oxnard CA, US
Le T. Pham - Ventura CA, US
Jerry R. Cripe - Lompoc CA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L031/00

US Classification:

2502141, 250214 LA

Abstract:

Disclosed is a method for producing an array () of p-intrinsic-n light detectors, as is an array produced in accordance with the method. The method includes providing a wafer (); forming a first layer () having a first type of electrical conductivity (e. g. , n-type) over a surface of the wafer; forming a second layer () that is an intrinsic layer on the first layer and, for each light detector, implanting or diffusing a region (A) into a surface of the second layer that is opposite the surface on the first layer, the region (A) having a second type of electrical conductivity (e. g. , p-type). The method further includes forming an opening or aperture, referred to herein as a V-groove (), through the second layer at least to the first layer; and electrically contacting with a first electrical contact (B, B) the first layer through the V-groove. The method further electrically contacts each of the regions with an associated one of a second electrical contact (A), where the first and second electrical contacts are located on a same, non-radiation receiving surface of the array. In a preferred embodiment the steps of electrically contacting each comprise forming an Indium bump, and further comprise hybridizing the array with a readout integrated circuit ().

US Patent:

7129489, Oct 31, 2006

Filed:

Dec 3, 2004

Appl. No.:

11/003637

Inventors:

Le Thanh Pham - Ventura CA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

G01J 5/20

US Classification:

2503384

Abstract:

An infrared detector has a multi-layer structure to simultaneously detect IR energy in different spectral bands without changing polarity of a bias imposed across the detector. Two absorption layers are separated by a barrier layer that imposes an electrical potential barrier to one of the absorption layers. Under low bias in one direction, only one layer generates a photocurrent. Under a higher bias in the same direction, both layers generate a photocurrent. Additional absorption layers may be added to detect additional bands of energy, where the additional absorption layers generate photocurrent under a bias in another direction. Two, three, and four band detection is disclosed. Where absorbing layers within a single unit cell absorb under different bias direction, the barrier layer between those different bias direction layers suppresses a diffusing electron current. A method for detecting and resolving energy absorbed in two, three, and four different energy bands is also provided.

US Patent:

54573378, Oct 10, 1995

Filed:

Oct 7, 1994

Appl. No.:

8/319751

Inventors:

Robert Baron - Santa Monica CA
Le T. Pham - Ventura CA
John P. Sheppard - Valley Center CA
William R. Peterson - Los Angeles CA

Assignee:

Hughes Aircraft Company - Los Angeles CA

International Classification:

H01L 2714
H01L 3100

US Classification:

257439

Abstract:

The photo-sensitive detector region of conventional Impurity Band Conduction (IBC) detector (also known as a Blocked Impurity Band [BIB] detector) is divided into a wide detection (or collection) region and a narrow gain region by means of tailoring the doping profile. The narrow gain region is that portion of the photo-sensitive detector region closest to the blocking layer, where the electric field is the largest, whose As concentration is made smaller (in the range of 2 to 5. times. 10. sup. 17 cm. sup. -3) to increase the impact ionization coefficient by decreasing the electron scattering. The wide detection region is that portion of the photo-sensitive detector region furthest from the blocking layer, where the electric field is smallest and the As concentration is larger (in the range of 5 to 8. times. 10. sup. 17 cm. sup. -3) to decrease the impact ionization coefficient by increasing the electron scattering.