Kristian M Bjelland

US Patent:

6744608, Jun 1, 2004

Filed:

May 14, 2002

Appl. No.:

10/146517

Inventors:

Kyusik Sin - Pleasanton CA
Kristian M. Bjelland - Fremont CA
Benjamin Chen - San Jose CA
Hugh C. Hiner - Fremont CA
Xizeng Shi - Fremont CA

Assignee:

Western Digital (Fremont), Inc. - Fremont CA

International Classification:

G11B 5127

US Classification:

3603242

Abstract:

A method and system for providing a tunneling magnetoresistive sensor is disclosed. The method and system include providing a pinned layer, a free layer and an insulating layer between the pinned and free layers. The pinned and free layers are ferromagnetic. The method and system also include providing a hard mask layer to be used in defining the sensor at the top of the tunneling magnetoresistive sensor. The method and system also include using the hard mask layer to define the tunneling magnetoresistive sensor. Thus, the pinned layer, the free layer and the insulating layer are capable of having a minimum dimension of less than 0. 2 m.