Vanderbilt Medical GroupVanderbilt University Medical Center General Surgery 1301 Medical Ctr Dr, Nashville, TN 37232 615 322-2063 (phone), 615 343-9485 (fax)
Education:
Medical School Johns Hopkins University School of Medicine Graduated: 1977
Abdominal Hernia Cholelethiasis or Cholecystitis Inguinal Hernia Intestinal Obstruction Malignant Neoplasm of Female Breast
Languages:
English
Description:
Dr. Sharp graduated from the Johns Hopkins University School of Medicine in 1977. He works in Nashville, TN and specializes in General Surgery. Dr. Sharp is affiliated with Vanderbilt University Medical Center.
Michael Robinson - Femont CA, US Kenneth Sharp - Santa Clara CA, US
International Classification:
G06F001/32
US Classification:
713320000, 713300000
Abstract:
Systems and methods of recovering a device from a sleep mode of operation are described. In one aspect, a device includes a sleep recovery circuit that is operable to transition from a first signal detection mode to a second signal detection mode in response to detection of a first signal characteristic in an input signal. The sleep recovery circuit also is operable to transition from the second signal detection mode to a third operational mode in response to detection in the input signal of a second signal characteristic different from the first signal characteristic.
Current Dump Circuit For Bipolar Random Access Memories
Fairchild Camera & Instrument Corporation - Mountain CA
International Classification:
G11C 702 G11C 800
US Classification:
365204
Abstract:
Circuitry for rapidly discharging a row of RAM cells upon deselection of the word line. The word line switching transistor collector current is sensed and corresponding voltage level signals are applied to a second switching transistor between the bottom word line of the memory row and a large dump current source. The emitter of the second switching transistor is clamped at a level that will permit the switching transistor to turn on only when there is no emitter current through the word line switching transistor to thereby rapidly discharge the capacitive row of memory cells and therefore improve the operating speed of the memory.