Kaushal P Singh

US Patent:

6730354, May 4, 2004

Filed:

Aug 8, 2001

Appl. No.:

09/925223

Inventors:

Stephen R. Gilbert - San Francisco CA
Kaushal Singh - Santa Clara CA
Sanjeev Aggarwal - Plano TX
Stevan Hunter - Fort Collins CO

Assignee:

Agilent Technologies, Inc. - Palo Alto CA
Applied Materials, Inc. - Santa Clara CA
Texas Instruments, Inc. - Dallas TX

International Classification:

C23C 1640

US Classification:

42725532, 42725535, 42725536, 427901

Abstract:

Improved methods of forming PZT thin films that are compatible with industry-standard chemical vapor deposition production techniques are described. These methods enable PZT thin films having thicknesses of 70 nm or less to be fabricated with high within-wafer uniformity, high throughput and at a relatively low deposition temperature. In one aspect, a source reagent solution comprising a mixture of a lead precursor, a titanium precursor and a zirconium precursor in a solvent medium is provided. The source reagent solution is vaporized to form a precursor vapor. The precursor vapor is introduced into a chemical vapor deposition chamber containing the substrate. In another aspect, before deposition, the substrate is preheated during a preheating period. After the preheating period, the substrate is disposed on a heated susceptor during a heating period, after which a PZT film is formed on the heated substrate.

US Patent:

7396743, Jul 8, 2008

Filed:

Jun 10, 2004

Appl. No.:

10/866471

Inventors:

Kaushal K. Singh - Santa Clara CA, US
David Carlson - San Jose CA, US
Manish Hemkar - Sunnyvale CA, US
Satheesh Kuppurao - San Jose CA, US
Randhir Thakur - San Jose CA, US

International Classification:

H01L 21/20

US Classification:

438479, 438483, 438795

Abstract:

A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate cleaning method and the film growth method are carried out at a temperature below 750 C. , and typically at a temperature from about 700 C. to about 500 C. The cleaning method and the film growth method employ the use of radiation having a wavelength ranging from about 310 nm to about 120 nm in the processing volume in which the silicon-containing film is grown. Use of this radiation in combination with particular partial pressure ranges for the reactive cleaning or film-forming component species enable the substrate cleaning and epitaxial film growth at temperatures below those previously known in the industry.

US Patent:

7540920, Jun 2, 2009

Filed:

Oct 17, 2003

Appl. No.:

10/688797

Inventors:

Kaushal K. Singh - Santa Clara CA, US
Paul B. Comita - Menlo Park CA, US
Lance A. Scudder - San Jose CA, US
David K. Carlson - Santa Clara CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C30B 21/02

US Classification:

117105, 117 89, 117 94, 117 95, 117939

Abstract:

Embodiments of the invention generally provide a composition of silicon compounds and methods for using the silicon compounds to deposit a silicon-containing film. The processes employ introducing the silicon compound to a substrate surface and depositing a portion of the silicon compound, the silicon motif, as the silicon-containing film. The ligands are another portion of the silicon compound and are liberated as an in-situ etchant. The in-situ etchants supports the growth of selective silicon epitaxy. Silicon compounds include SiRX, SiRX, SiRX, wherein X is independently hydrogen or halogen and R is carbon, silicon or germanium. Silicon compound also include compounds comprising three silicon atoms, fourth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen, as well as, comprising four silicon atoms, fifth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen.

US Patent:

7601652, Oct 13, 2009

Filed:

Jun 21, 2005

Appl. No.:

11/157567

Inventors:

Kaushal K. Singh - Santa Clara CA, US
Sean M. Seutter - San Jose CA, US
Jacob Smith - Santa Clara CA, US
R. Suryanarayanan Iyer - Santa Clara CA, US
Steve G. Ghanayem - Los Altos CA, US
Adam Brailove - Gloucester MA, US
Robert Shydo - Andover MA, US
Jeannot Morin - Intervale NH, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/31

US Classification:

438792, 438791

Abstract:

Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.

US Patent:

7645339, Jan 12, 2010

Filed:

Oct 12, 2006

Appl. No.:

11/549033

Inventors:

Kaushal K. Singh - Santa Clara CA, US
Paul B. Comita - Menlo Park CA, US
Lance A. Scudder - San Jose CA, US
David K. Carlson - Santa Clara CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C30B 21/04

US Classification:

117 89, 117104, 117 15

Abstract:

Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrate containing a crystalline surface and a non-crystalline surface within a process chamber, exposing the substrate to a process gas containing neopentasilane, and depositing an epitaxial layer on the crystalline surface. In another example, a method for blanket depositing a silicon-containing material is provide which includes positioning and heating a substrate containing a crystalline surface and feature surfaces within a process chamber and exposing the substrate to a process gas containing neopentasilane and a carbon source to deposit a silicon carbide blanket layer across the crystalline surface and the feature surfaces. Generally, the silicon carbide blanket layer contains a silicon carbide epitaxial layer selectively deposited on the crystalline surface.

US Patent:

7648927, Jan 19, 2010

Filed:

Jun 20, 2006

Appl. No.:

11/425344

Inventors:

Kaushal K. Singh - Santa Clara CA, US
Joseph M. Ranish - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/31

US Classification:

438792, 438723, 438763, 438781, 438791, 257E2112

Abstract:

Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e. g. , epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.

US Patent:

7651955, Jan 26, 2010

Filed:

Jun 20, 2006

Appl. No.:

11/425346

Inventors:

Joseph M. Ranish - San Jose CA, US
Kaushal K. Singh - Santa Clara CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/31
H01L 21/469

US Classification:

438769, 438905, 438474, 438745, 257E2117, 257E21054, 257E21134, 257E21229, 257E21267, 257E21329, 257E21421

Abstract:

Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e. g. , epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.

US Patent:

7978964, Jul 12, 2011

Filed:

Apr 27, 2006

Appl. No.:

11/380553

Inventors:

Joseph Michael Ranish - San Jose CA, US
Kaushal Kishore Singh - Santa Clara CA, US
Bruce Adams - Portland OR, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

A21B 2/00

US Classification:

392416, 392407, 392422

Abstract:

A thermal processing chamber with a dielectric barrier discharge (DBD) lamp assembly and a method for using the same are provided. In one embodiment, a thermal processing chamber includes a chamber body and a dielectric barrier discharge lamp assembly. The dielectric barrier discharge lamp assembly further comprises a first electrode, a second electrode and a dielectric barrier. The dielectric barrier discharge lamp assembly is positioned between the first electrode and the second electrode. The dielectric barrier defines a discharge space between the dielectric barrier and the second electrode. A circuit arrangement is coupled to the first and second electrodes, and is adapted to operate the dielectric barrier discharge lamp assembly.