Juan C. SOTELO - Hawthorne CA, US Robert D. STULTZ - Cypress CA, US David FILGAS - Newbury Park CA, US
Assignee:
RAYTHEON COMPANY - Waltham MA
International Classification:
H01S 3/11 H01S 3/16 B23P 11/00 H01S 3/094
US Classification:
372 10, 372 75, 372 41, 29428
Abstract:
A laser system includes a first laser diode configured to generate first light in a first direction along an optical path; a laser resonator having a gain medium, anisotropic saturable absorber, and a wavelength selective outcoupler positioned in the optical path upon which the first light impinges a first side thereof so as to pump the gain medium (first light from the first laser diode is absorbed in the gain medium), a second laser diode configured to generate second light in a second direction along the optical path toward a second side of the resonator, passes through the wavelength selective outcoupler unimpeded and is absorbed by the saturable absorber element, wherein the second light has a polarization corresponding to the orientation of the saturable absorber; the wavelength selective outcoupler is configured to only allow third light of a predetermined wavelength to have feedback in the laser resonator, achieve gain in the resonator, and be emitted from the laser resonator. A method for forming a laser system is also described.
Microchip Laser With Single Solid Etalon And Interfacial Coating
- Waltham MA, US Juan Carlos Sotelo - Hawthorne CA, US David M. Filgas - Newbury Park CA, US
Assignee:
Raytheon Company - Waltham MA
International Classification:
H01S 3/11
US Classification:
372 10
Abstract:
A microchip laser includes a microchip laser base comprising a gain region and a passive Q-switch region. The microchip laser also includes a solid etalon coupled to the microchip laser base, and an interfacial coating disposed between the microchip laser base and the solid etalon. In some embodiments, the microchip laser further includes a dichroic coating disposed on a surface of the microchip laser base opposite the interfacial coating.