Joleyn E Balch

US Patent:

7850941, Dec 14, 2010

Filed:

Oct 20, 2006

Appl. No.:

11/551305

Inventors:

Loucas Tsakalakos - Niskayuna NY, US
Bastiaan A. Korevaar - Schenectady NY, US
Joleyn E. Balch - Schaghticoke NY, US
Jody A. Fronheiser - Selkirk NY, US
Reed R. Corderman - Niskayuna NY, US
Fred Sharifi - Niskayuna NY, US
Vidya Ramaswamy - Niskayuna NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

C01B 31/00
C01B 31/02

US Classification:

423445R, 977891, 977890, 977888, 977893, 4234473

Abstract:

A method for forming an array of elongated nanostructures, includes in one embodiment, providing a substrate, providing a template having a plurality of pores on the substrate, and removing portions of the substrate under the plurality of pores of the template to form a plurality of cavities. A catalyst is provided in the plurality of cavities in the substrate, and the pores of the template are widened to expose the substrate around the catalyst so that the catalyst is spaced from the sides of the plurality of pores of the template. A plurality of elongated nanostructures is grown from the catalyst spaced from the sides of the pores of the template.

US Patent:

7902736, Mar 8, 2011

Filed:

Jan 9, 2008

Appl. No.:

11/971452

Inventors:

Heather Diane Hudspeth - Clifton Park NY, US
Ji Ung Lee - Niskayuna NY, US
Reed Roeder Corderman - Niskayuna NY, US
Anping Zhang - Niskayuna NY, US
Renee Bushey Rohling - Burnt Hills NY, US
Lauraine Denault - Nassau NY, US
Joleyn Eileen Balch - Clifton Park NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

H01J 1/62

US Classification:

313495, 313309

Abstract:

The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc. ) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

US Patent:

8003883, Aug 23, 2011

Filed:

Jan 11, 2007

Appl. No.:

11/622295

Inventors:

Bastiaan Arie Korevaar - Schenectady NY, US
Loucas Tsakalakos - Niskayuna NY, US
Joleyn Balch - Schaghticoke NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

H01L 31/00

US Classification:

136255, 136258, 136261, 257431, 257461, 257465, 977712, 977720, 977762, 977948, 977954

Abstract:

A photovoltaic device that includes a substrate and a nanowall structure disposed on the substrate surface. The device also includes at least one layer conformally deposited over the nanowall structure. The conformal layer(s) is at least a portion of a photoactive junction. A method for making a photovoltaic device includes generating a nanowall structure on a substrate surface and conformally depositing at least one layer over the nanowall structure thereby forming at least one photoactive junction. A solar panel includes at least one photovoltaic device based on a nanowall structure. The solar panel isolates such devices from its surrounding atmospheric environment and permits the generation of electrical power. Optoelectronic device may also incorporate a photovoltaic device based on a nanowall structure.

US Patent:

8258047, Sep 4, 2012

Filed:

Dec 4, 2006

Appl. No.:

11/633205

Inventors:

Loucas Tsakalakos - Niskayuna NY, US
Joleyn Eileen Balch - Schaghticoke NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

H01L 21/20
H01L 21/36

US Classification:

438478, 977892

Abstract:

A method for depositing nanowires is disclosed. The method includes depositing multiple nanowires onto a surface of a liquid. The method also includes partially compressing the nanowires. The method also includes dipping a substrate into the liquid. The method further includes pulling the substrate out of the liquid at a controlled speed. The method also includes transferring the nanowires onto the substrate parallel to a direction of the pulling.

US Patent:

8622223, Jan 7, 2014

Filed:

Dec 17, 2008

Appl. No.:

12/337164

Inventors:

Anping Zhang - Rexford NY, US
Azar Alizadeh - Wilton NY, US
Joleyn Eileen Balch - Schaghticoke NY, US
Rui Chen - Clifton Park NY, US
Anthony John Murray - Lebanon NJ, US
Vicki Herzl Watkins - Alplaus NY, US
Oliver Charles Boomhower - Waterford NY, US
Reed Roeder Corderman - Niskayuna NY, US
Peter Paul Gipp - Schenectady NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

B01D 71/02
B01D 69/12
B01D 63/08

US Classification:

21050021, 21050022, 21050025, 210488, 210490, 205199, 205324, 4283044, 4283122, 4283126

Abstract:

A method of making a membrane assembly is provided. The method comprises forming an inorganic membrane layer disposed on a substrate, and forming a plurality of macropores in the substrate at least in part using anodization. Further, a membrane assembly is provided. The membrane assembly comprises a filtering membrane that is coupled to an anodized substrate comprising a plurality of macropores.

US Patent:

20070029911, Feb 8, 2007

Filed:

Jul 19, 2005

Appl. No.:

11/185004

Inventors:

Heather Hudspeth - Clifton Park NY, US
Ji Lee - Niskayuna NY, US
Reed Corderman - Niskayuna NY, US
Anping Zhang - Niskayuna NY, US
Renee Rohling - Burnt Hills NY, US
Lauraine Denault - Nassau NY, US
Joleyn Balch - Clifton Park NY, US

International Classification:

H01J 1/02
B05D 5/12
H01J 9/04

US Classification:

313309000, 313351000, 445050000, 427077000

Abstract:

The present invention relates to gated nanorod field emission devices, wherein such devices have relatively small emitter tip-to-gate distances, thereby providing a relatively high emitter tip density and low turn on voltage. Such methods employ a combination of traditional device processing techniques (lithography, etching, etc.) with electrochemical deposition of nanorods. These methods are relatively simple, cost-effective, and efficient; and they provide field emission devices that are suitable for use in x-ray imaging applications, lighting applications, flat panel field emission display (FED) applications, etc.

US Patent:

20070247048, Oct 25, 2007

Filed:

Sep 23, 2005

Appl. No.:

11/234023

Inventors:

Anping Zhang - Niskayuna NY, US
Joleyn Balch - Clifton Park NY, US
Loucas Tsakalakos - Niskayuna NY, US
Heather Hudspeth - Clifton Park NY, US
Reed Corderman - Niskayuna NY, US

Assignee:

General Electric Company - Schenectady NY

International Classification:

H01J 1/00
H01J 9/00

US Classification:

313311000, 313309000, 313310000, 445050000, 445024000

Abstract:

In a method of making a field emitter, at least one post () is formed on a semiconductor substrate (). The post () extends upwardly from the substrate (). The post () is monocrystalline with the substrate (). A dielectric layer () is deposited on the substrate (). The dielectric layer () defines a via () therethrough about the post (). A conductive gate layer () is applied to the dielectric layer () so that the conductive gate layer () defines an opening that is juxtaposed with the via (). At least one nanostructure () is grown upwardly from the top surface of the post ().

US Patent:

20100108132, May 6, 2010

Filed:

Oct 30, 2008

Appl. No.:

12/261171

Inventors:

Loucas Tsakalakos - Niskayuna NY, US
Bastiaan Arie Korevaar - Schenectady NY, US
Joleyn Eileen Balch - Schaghticoke NY, US
Jody Fronheiser - Selkirk NY, US
Bo Li - Clifton Park NY, US
Anis Zribi - Colorado Springs CO, US

Assignee:

GENERAL ELECTRIC COMPANY - Schenectady NY

International Classification:

H01L 31/0352
H01L 21/20
H01L 29/06

US Classification:

136256, 257414, 438479, 257415, 257E29022, 257E2109, 257E31032

Abstract:

Disclosed herein is a nanodevice. Disclosed herein too is a method of manufacturing a nanodevice. In one embodiment the nanodevice includes a first substrate; a second substrate; a nanowire; the nanowire contacting the first substrate and the second substrate; the nanowire comprising a metal, a semi-conductor or a combination thereof.