Jerry A Chow

US Patent:

20220221108, Jul 14, 2022

Filed:

Jan 8, 2021

Appl. No.:

17/144964

Inventors:

- Armonk NY, US
Patryk Gumann - Tarrytown NY, US
Jerry M. Chow - Scarsdale NY, US

International Classification:

F17C 3/08

Abstract:

Techniques facilitating multiple cryogenic systems sectioned within a common vacuum space are provided. In one example, a cryostat can comprise a plurality of thermal stages and a thermal switch. The plurality of thermal stages can intervene between a 4-Kelvin (K) stage and a Cold Plate stage. The plurality of thermal stages can include a Still stage and an intermediate thermal stage that can be directly coupled mechanically to the Still stage via a support rod. The thermal switch can be coupled to the intermediate thermal stage and an adjacent thermal stage. The thermal switch can facilitate modifying a thermal profile of the cryostat by providing a switchable thermal path between the intermediate thermal stage and the adjacent thermal stage.

US Patent:

20230019142, Jan 19, 2023

Filed:

Jun 21, 2022

Appl. No.:

17/807979

Inventors:

- Armonk NY, US
Patryk Gumann - Tarrytown NY, US
Jay M. Gambetta - Yorktown Heights NY, US
Jerry M. Chow - White Plains NY, US

International Classification:

H01P 1/22
H01P 11/00
H01P 1/30
G06N 10/00
H01L 39/00

Abstract:

Techniques for facilitating reduced thermal resistance attenuator on high-thermal conductivity substrates for quantum applications are provided. A device can comprise a substrate that provides a thermal conductivity level that is more than a defined thermal conductivity level. The device can also comprise one or more grooved transmission lines formed in the substrate. The one or more grooved transmission lines can comprise a powder substance. Further, the device can comprise one or more copper heat sinks formed in the substrate. The one or more copper heat sinks can provide a ground connection. Further, the one or more copper heat sinks can be formed adjacent to the one or more grooved transmission lines.

US Patent:

20210134880, May 6, 2021

Filed:

Nov 6, 2019

Appl. No.:

16/676304

Inventors:

- Armonk NY, US
Martin O. Sandberg - Ossining NY, US
Hanhee Paik - Danbury CT, US
Jerry M. Chow - White Plains NY, US

International Classification:

H01L 27/18
G06N 10/00
H01L 39/22
H01L 39/02

Abstract:

According to an embodiment of the present invention, a system for non-invasively characterizing a qubit device includes a characterization probe chip. The characterization probe chip includes a substrate and a characterization resonator formed on a first surface of the substrate. The characterization resonator includes a superconducting stripline, and a superconducting antenna coupled to an end of the superconducting stripline, the superconducting antenna positioned to align with a qubit on the qubit device being characterized. The characterization probe chip also includes and a superconducting ground plane formed on a second surface of the substrate, the second surface opposing the first surface. In operation, the superconducting antenna is configured to capacitively couple the characterization resonator to the qubit aligned with the superconducting antenna for characterization of the qubit.

US Patent:

20210119104, Apr 22, 2021

Filed:

Dec 28, 2020

Appl. No.:

17/135584

Inventors:

- Armonk NY, US
Martin O. Sandberg - Ossining NY, US
Jerry M. Chow - White Plains NY, US

International Classification:

H01L 39/24
G06N 10/00
B82Y 10/00
H01L 39/22

Abstract:

Techniques for forming quantum circuits, including connections between components of quantum circuits, are presented. A trench can be formed in a dielectric material, by removing a portion of the dielectric material and a portion of conductive material layered on top of the dielectric material, to enable creation of circuit components of a circuit. The trench can define a regular nub or compensated nub to facilitate creating electrical leads connected to the circuit components on a nub. The compensated nub can comprise recessed regions to facilitate depositing material during evaporation to form the leads. For compensated nub implementation, material can be evaporated in two directions, with oxidation performed in between such evaporations, to contact leads and form a Josephson junction. For regular nub implementation, material can be evaporated in four directions, with oxidation performed in between the third and fourth evaporations, to contact leads and form a Josephson junction.

US Patent:

20210119313, Apr 22, 2021

Filed:

Dec 23, 2020

Appl. No.:

17/131916

Inventors:

- Armonk NY, US
Patryk Gumann - Tarrytown NY, US
Jay M. Gambetta - Yorktown Heights NY, US
Jerry M. Chow - White Plains NY, US

International Classification:

H01P 1/22
H01P 1/30
H01P 11/00
H01P 3/08

Abstract:

The technology described herein is directed towards a cryogenic-stripline microwave attenuator. A first high thermal conductivity substrate such as sapphire and a second high thermal conductivity substrate such as sapphire, along with a signal conductor comprising one or more attenuator lines between the substrates form a stripline. A compression component such as one or more screws, vias (plus clamps) and/or clamps presses the first high thermal conductivity substrate against one side of the signal conductor and presses the second high thermal conductivity substrate against another side of the signal conductor. The high thermal conductivity of the substrates facilitates improved thermalization, while the pressing of the substrates against the conductor reduces the thermal boundary (Kapitza) resistance and thereby, for example, improves thermalization and reduces thermal noise.

US Patent:

20210111471, Apr 15, 2021

Filed:

Dec 21, 2020

Appl. No.:

17/129364

Inventors:

- Armonk NY, US
PATRYK GUMANN - Tarrytown, NY, US
JERRY M. CHOW - White Plains NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01P 3/08
H01L 23/66
H01L 39/02
H01L 39/24
H01P 11/00

Abstract:

A microstrip that is usable in a quantum application (q-microstrip) includes a ground plane, a polyimide film disposed over the ground plane at a first surface of the polyimide film, and a conductor formed on a second side of the polyimide film such that the first surface is substantially opposite to the second surface. A material of the conductor provides greater than a threshold thermal conductivity (T) with a structure of a dilution fridge stage (stage).

US Patent:

20200404806, Dec 24, 2020

Filed:

Jun 19, 2019

Appl. No.:

16/445470

Inventors:

- Armonk NY, US
Salvatore Bernardo Olivadese - Stamford CT, US
Sean Hart - Tarrytown NY, US
Nicholas Torleiv Bronn - Long Island City NY, US
Jerry M. Chow - White Plains NY, US
Markus Brink - White Plains NY, US
Patryk Gumann - Tarrytown NY, US
Daniela Florentina Bogorin - Syracuse NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H05K 7/20
H01L 21/265

Abstract:

A thermalization structure is formed using a cover configured with a set of pillars, the cover being a part of a cryogenic enclosure of a low temperature device (LTD). A chip including the LTD is configured with a set of cavities, a cavity in the set of cavities having a cavity profile. A pillar from the set of pillars and corresponding to the cavity has a pillar profile such that the pillar profile causes the pillar to couple with the cavity of the cavity profile within a gap tolerance to thermally couple the chip to the cover for heat dissipation in a cryogenic operation of the chip.

US Patent:

20200357975, Nov 12, 2020

Filed:

Jun 18, 2020

Appl. No.:

16/905519

Inventors:

- Armonk NY, US
Salvatore Bernardo Olivadese - Stamford CT, US
Jerry M. Chow - White Plains NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 39/04
H01L 27/18
H01L 39/02

Abstract:

A device includes a first substrate formed of a first material that exhibits a threshold level of thermal conductivity. The threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum circuit operates. In an embodiment, the device also includes a second substrate disposed in a recess of the first substrate, the second substrate formed of a second material that exhibits a second threshold level of thermal conductivity. The second threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum circuit operates. In an embodiment, at least one qubit is disposed on the second substrate. In an embodiment, the device also includes a transmission line configured to carry a microwave signal between the first substrate and the second substrate.