Jay S Rascoe

US Patent:

20060270203, Nov 30, 2006

Filed:

May 31, 2005

Appl. No.:

10/908884

Inventors:

Douglas Coolbaugh - Essex Junction VT, US
Louis Lanzerotti - Charlotte VT, US
Bradley Orner - Fairfax VT, US
Jay Rascoe - Underhill VT, US
David Sheridan - Williston VT, US
Stephen St. Onge - Colchester VT, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L 21/425

US Classification:

438527000

Abstract:

Methods are disclosed for forming a varied impurity profile for a collector using scattered ions while simultaneously forming a subcollector. In one embodiment, the invention includes: providing a substrate; forming a mask layer on the substrate including a first opening having a first dimension; and substantially simultaneously forming through the first opening a first impurity region at a first depth in the substrate (subcollector) and a second impurity region at a second depth different than the first depth in the substrate. The breakdown voltage of a device can be controlled by the size of the first dimension, i.e., the distance of first opening to an active region of the device. Numerous different sized openings can be used to provide devices with different breakdown voltages using a single mask and single implant. A semiconductor device is also disclosed.

US Patent:

20070275534, Nov 29, 2007

Filed:

Aug 15, 2007

Appl. No.:

11/839106

Inventors:

Douglas Coolbaugh - Essex Junction VT, US
Louis Lanzerotti - Charlotte VT, US
Bradley Orner - Fairfax VT, US
Jay Rascoe - Underhill VT, US
David Sheridan - Williston VT, US
Stephen St. Onge - Colchester VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/331

US Classification:

438340000, 257E21370

Abstract:

Methods are disclosed for forming a varied impurity profile for a collector using scattered ions while simultaneously forming a subcollector. In one embodiment, the invention includes: providing a substrate; forming a mask layer on the substrate including a first opening having a first dimension; and substantially simultaneously forming through the first opening a first impurity region at a first depth in the substrate (subcollector) and a second impurity region at a second depth different than the first depth in the substrate. The breakdown voltage of a device can be controlled by the size of the first dimension, i.e., the distance of first opening to an active region of the device. Numerous different sized openings can be used to provide devices with different breakdown voltages using a single mask and single implant. A semiconductor device is also disclosed.