Jason W New

US Patent:

7601639, Oct 13, 2009

Filed:

Jun 7, 2007

Appl. No.:

11/759380

Inventors:

Salvator F. Pavone - Murphy TX, US
Jason J New - Allen TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21/44

US Classification:

438679, 438197, 438903, 257E21054, 257E21174, 257E21293, 257E21632

Abstract:

The present invention provides, in one aspect, the present invention provides, in one embodiment, a method of conditioning a deposition chamber. This method comprises placing an undercoat on the walls of a deposition chamber and depositing a pre-deposition coat over the undercoat with a plasma gas mixture conducted at a high pressure and with high gas flow.

US Patent:

20060228905, Oct 12, 2006

Filed:

Apr 12, 2005

Appl. No.:

11/103860

Inventors:

Salvator Pavone - Murphy TX, US
Jason New - Allen TX, US

Assignee:

Texas Instruments, Incorporated - Dallas TX

International Classification:

H01L 21/31

US Classification:

438778000

Abstract:

The present invention provides, in one aspect, the present invention provides, in one embodiment, a method of conditioning a deposition chamber This method comprises placing an undercoat on the walls of a deposition chamber and depositing a pre-deposition coat over the undercoat with a plasma gas mixture conducted at a high pressure and with high gas flow.

US Patent:

20120108066, May 3, 2012

Filed:

Oct 28, 2011

Appl. No.:

13/284624

Inventors:

Jason James New - St. Paul TX, US
Salvatore Frank Pavone - Murphy TX, US

Assignee:

TEXAS INSTRUMENTS INCORPORATED - Dallas TX

International Classification:

H01L 21/306
B05B 1/00
H01L 21/304

US Classification:

438692, 239589, 257E2123

Abstract:

A dielectric deposition tool for forming a silicon dioxide layer on a wafer with a TEOS showerhead which delivers a flow rate per unit area from an edge band of the showerhead that is at least twice a flow rate per unit area from a central region of the showerhead. The edge band extends at least one half inch from an outer edge of the showerhead up to one fourth of the diameter of the wafer. A process of forming an integrated circuit by forming a silicon dioxide layer on a wafer containing the integrated circuit using the dielectric deposition tool. The silicon dioxide layer is thicker under the edge band than under the central region. A subsequent CMP operation reduces the thickness difference between the wafer outer annulus and the wafer core by at least half. The silicon dioxide layer has a compressive stress between 125 and 225 MPa.

US Patent:

20090188524, Jul 30, 2009

Filed:

Jan 30, 2008

Appl. No.:

12/022924

Inventors:

Jason J. New - St. Paul TX, US
Antonio Ibarra-Rivera - Plano TX, US

International Classification:

B08B 6/00

US Classification:

134 11, 134 56 R

Abstract:

An automatic method () of in-situ cleaning a processing system () including a process chamber () pumped by a roughing pump () and a turbomolecular pump () includes the steps of automatically performing a first RF plasma clean () (referred to herein as a chamber clean) to clean the process chamber, wherein the turbomolecular pump () is isolated and the roughing pump () pumps the processing chamber (). The turbomolecular pump () is automatically switched on to pump the processing chamber (). While the turbomolecular pump is pumping the processing chamber (), a second RF plasma clean () (referred to herein as an automatic turbo clean) is performed clean the turbomolecular pump (). In embodiments of the invention the turbo clean () automatically sets at least one gas flow, an RF power, and a pressure in the chamber ().

US Patent:

20090165279, Jul 2, 2009

Filed:

Dec 8, 2008

Appl. No.:

12/330042

Inventors:

Antonio Ibarra-Rivera - Plano TX, US
Jason James New - St. Paul TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

B23P 11/00

US Classification:

29428, 2940709, 29464, 29700, 292815

Abstract:

A method and apparatus for aligning a CVD showerhead, comprising engaging a showerhead stem clamp with a showerhead stem outside of a process chamber of the CVD system. An alignment fixture is provided, and a plurality of spacer discs are positioned between the showerhead suspended from a top plate of the CVD system and heated platen. Nuts supporting the showerhead to the top plate are loosened, therein permitting the showerhead to move vertically within the process chamber. The process chamber is closed and the top plate is lowered, wherein the showerhead contacts the plurality of spacer discs. The alignment fixture is engaged with the showerhead stem clamp, therein fixing a vertical position of the showerhead with respect to the top plate, and the top plate is raised. The position of the of the showerhead is then fixed with respect to the top plate via a plurality of standoffs, an adjustment bracket, a threaded rod, and a plurality of nuts.

Address:

4000 Ace Ln TRLR 358, Lewisville, TX 75067

VIN:

3VWJX7AJ4AM003897

Make:

VOLKSWAGEN

Model:

JETTA

Year:

2010