James A Tornello

US Patent:

6503834, Jan 7, 2003

Filed:

Oct 3, 2000

Appl. No.:

09/677585

Inventors:

Xiaomeng Chen - Poughkeepsie NY
Mahadevaiyer Krishnan - Hopewell Junction NY
Judith M. Rubino - Ossining NY
Carlos J. Sambucetti - Croton-on-Hudson NY
James A. Tornello - Cortlandt Manor NY

Assignee:

International Business Machines Corp. - Armonk NY

International Classification:

H01L 2144

US Classification:

438687, 438633, 438692

Abstract:

The invention provides a process to increase the reliability of BEOL interconnects. The process comprises forming an array of conductors on a dielectric layer on a wafer substrate, polishing the upper surface so that the surfaces of the conductors are substantially co-planar with the upper surface of the dielectric layer, forming an alloy film on the upper surfaces of the conductors, and brush cleaning the upper surfaces of the conductors and the dielectric layer.

US Patent:

6800503, Oct 5, 2004

Filed:

Nov 20, 2002

Appl. No.:

10/300520

Inventors:

Joseph T. Kocis - Pleasant Valley NY
James Tornello - Cortlandt Manor NY
Kevin S. Petrarca - Newburgh NY
Richard Volant - New Fairfield CT
Seshadri Subbanna - Brewster NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2100

US Classification:

438 52, 438125, 438126, 438127, 438 55, 438 25, 438 26, 438723, 333219, 333235, 280735, 257214

Abstract:

A method of fabricating an encapsulated micro electro-mechanical system (MEMS) and making of same that includes forming a dielectric layer, patterning an upper surface of the dielectric layer to form a trench, forming a release material within the trench, patterning an upper surface of the release material to form another trench, forming a first encapsulating layer that includes sidewalls within the another trench, forming a core layer within the first encapsulating layer, and forming a second encapsulating layer above the core layer, where the second encapsulating layer is connected to the sidewalls of the first encapsulating layer. Alternatively, the method includes forming a multilayer MEMS structure by photomasking processes to form a first metal layer, a second layer including a dielectric layer and a second metal layer, and a third metal layer. The core layer and the encapsulating layers are made of materials with complementary electrical, mechanical and/or magnetic properties.

US Patent:

6812193, Nov 2, 2004

Filed:

Aug 30, 2002

Appl. No.:

10/231047

Inventors:

Michael Todd Brigham - Charlotte VT
Donald Francis Canaperi - Bridgewater CT
Michael Addison Cobb - Croton-on-Hudson NY
William Cote - Poughkeepsie NY
Kenneth Morgan Davis - Newburgh NY
Scott Alan Estes - Essex Junction VT
Edward Jack Gordon - Bristol VT
James Willard Hannah - Ossining NY
Mahadevaiyer Krishnan - Hopewell Junction NY
Michael Francis Lofaro - Milton NY
Michael Joseph MacDonald - Yorktown Heights NY
Dean Allen Schaffer - Essex Junction VT
George James Slusser - Milton VT
James Anthony Tornello - Cortlandt Manor NY
Eric Jeffrey White - Charlotte VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C09K 1300

US Classification:

510175, 510176, 510268, 433692, 433693, 252 791, 252 794

Abstract:

Slurry compositions comprising an oxidizing agent, optionally a copper corrosion inhibitor, abrasive particles; surface active agent, a service of chloride and a source of sulfate ions.

US Patent:

7199450, Apr 3, 2007

Filed:

May 13, 2005

Appl. No.:

10/908480

Inventors:

Jon A. Casey - Poughkeepsie NY, US
Michael Berger - New Paltz NY, US
Leena P. Buchwalter - Hopewell Junction NY, US
Donald F. Canaperi - Bridgewater CT, US
Raymond R. Horton - Dover Plains NY, US
Anurag Jain - Poughkeepsie NY, US
Eric D. Perfecto - Poughkeepsie NY, US
James A. Tornello - Cortlandt Manor NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/06
H01L 23/58

US Classification:

257622, 257643, 257647, 257E21546, 257E21553, 257E21585

Abstract:

Sealing a via using a soventless, low viscosity, high temperature stable polymer or a high solids content polymer solution of low viscosity, where the polymeric material is impregnated within the via at an elevated temperature. A supply chamber is introduced to administer the polymeric material at an elevated temperature, typically at a temperature high enough to liquefy the polymeric material. The polymeric material is introduced through heated supply lines under force from a pump, piston, or a vacuum held within said supply chamber.

US Patent:

7202764, Apr 10, 2007

Filed:

Jul 8, 2003

Appl. No.:

10/604278

Inventors:

Hariklia Deligianni - Tenafly NJ, US
Panayotis Andricacos - Croton on Hudson NY, US
L. Paivikki Buchwalter - Hopewell Junction NY, US
John M. Cotte - New Fairfield NY, US
Christopher Jahnes - Upper Saddle River NJ, US
Mahadevaiyer Krishnan - Hopewell Junction NY, US
John H. Magerlein - Yorktown Heights NY, US
Kenneth Stein - Sandy Hook CT, US
Richard P. Volant - New Fairfield CT, US
James A. Tornello - Cortlandt Manor NY, US
Jennifer Lund - Brookeville MD, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01H 51/22

US Classification:

335 78, 200181

Abstract:

A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400 C. ). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

US Patent:

7581314, Sep 1, 2009

Filed:

Feb 21, 2006

Appl. No.:

11/358823

Inventors:

Hariklia Deligianni - Tenafly NJ, US
Panayotis Andricacos - Croton on Hudson NY, US
L. Paivikki Buchwalter - Hopewell Junction NY, US
John M. Cotte - New Fairfield CT, US
Christopher Jahnes - Upper Saddle River NJ, US
Mahadevaiyer Krishnan - Hopewell Junction NY, US
John H. Magerlein - Yorktown Heights NY, US
Kenneth Stein - Sandy Hook CT, US
Richard P. Volant - New Fairfield CT, US
James A. Tornello - Cortlandt Manor NY, US
Jennifer Lund - Brookeville MD, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01K 3/10

US Classification:

29852, 29847, 29874, 257752, 438648

Abstract:

A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400 C. ). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

US Patent:

7955160, Jun 7, 2011

Filed:

Jun 9, 2008

Appl. No.:

12/135315

Inventors:

Michael A. Cobb - Croton on Hudson NY, US
Dinesh R. Koli - Hartsdale NY, US
Michael F. Lofaro - Stamford CT, US
Dennis G. Manzer - Bedford Hills NY, US
James A. Tornello - Cortlandt Manor NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B24B 1/00

US Classification:

451 41, 451287, 451291

Abstract:

A glass mold polishing structure and method. The method includes providing a polishing tool comprising mounting plate, a chuck plate over and mechanically attached to the mounting plate, and a pad structure over and mechanically attached to the chuck plate. A retaining structure is attached the chuck plate. A glass mold comprising a plurality of cavities is placed on the pad structure and within a perimeter formed by the retaining structure. A vacuum device is attached to the chuck plate. The vacuum device is activated such that a vacuum is formed and mechanically attaches the glass mold to the pad structure. The polishing tool comprising the glass mold mechanically attached to the pad structure is placed over and in contact with the polishing pad. The polishing tool comprising the glass mold is rotated. The glass mold is polished as a result of the rotation.

US Patent:

8263497, Sep 11, 2012

Filed:

Jan 13, 2009

Appl. No.:

12/352718

Inventors:

Paul S. Andry - Yorktown Heights NY, US
John M. Cotte - New Fairfield CT, US
Michael F. Lofaro - Stamford CT, US
Edmund J. Sprogis - Underhill VT, US
James A. Tornello - Cortlandt Manor NY, US
Cornelia K. Tsang - Mohegan Lake NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/302
H01L 21/461

US Classification:

438692, 438691, 438695, 438704, 438459

Abstract:

An assembly including a main wafer having a body with a front side and a back side and a plurality of blind electrical vias terminating above the back side, and a handler wafer, is obtained. A step includes exposing the blind electrical vias to various heights on the back side. Another step involves applying a first chemical mechanical polish process to the back side, to open any of the surrounding insulator adjacent the end regions of the cores remaining after the exposing step, and to co-planarize the via conductive cores, the surrounding insulator adjacent the side regions of the cores, and the body of the main wafer. Further steps include etching the back side to produce a uniform standoff height of each of the vias across the back side; depositing a dielectric across the back side; and applying a second chemical mechanical polish process to the back side.