James S Hu

US Patent:

7596100, Sep 29, 2009

Filed:

Nov 12, 2004

Appl. No.:

10/988172

Inventors:

Yi Lin - San Jose CA, US
Eric Andre Warmenhoven - San Jose CA, US
James Hu - Fremont CA, US
Sundar Poudyal - Pleasanton CA, US

Assignee:

Brocade Communications Systems, Inc. - San Jose CA

International Classification:

H04L 12/28

US Classification:

370254, 714 4

Abstract:

Methods, devices and systems for improved zone merge operations are disclosed. Two connected switches are arbitrated as an initiator and a receiver. The merge operation is initiated only by the initiator on an initiator/receiver inter-switch link. The initiator may initiate a merge request and the receiver may perform the computation of the difference between the old and the new zone. Either the whole configuration or only the differences are communicated between the switches. The merges may be done on a connected switch basis, not on a connected port basis. Only the principle ports in the principle inter-switch-link perform the merge operation. All the remaining ports, i. e. the non-principle ports, adopt the merge result of the principle ports. The zone information may also be cached on each switch such that merge calculations need not be performed again when a merge operation with the same configuration occurs in the future.

US Patent:

8107398, Jan 31, 2012

Filed:

Aug 21, 2009

Appl. No.:

12/545694

Inventors:

Yi Lin - San Jose CA, US
Eric Andre Warmenhoven - San Jose CA, US
James Hu - Fremont CA, US
Sundar Poudyal - Pleasanton CA, US

Assignee:

Brocade Communications Systems, Inc. - San Jose CA

International Classification:

H04L 12/28
G06F 11/00

US Classification:

370254, 370255, 370244, 370245, 370250, 370401, 714 44, 714 42

Abstract:

Methods, devices and systems for improved zone merge operations are disclosed. Two connected switches are arbitrated as an initiator and a receiver. The merge operation is initiated only by the initiator on an initiator/receiver inter-switch link. The initiator may initiate a merge request and the receiver may perform the computation of the difference between the old and the new zone. Either the whole configuration or only the differences are communicated between the switches. The merges may be done on a connected switch basis, not on a connected port basis. Only the principle ports in the principle inter-switch-link perform the merge operation. All the remaining ports, i. e. the non-principle ports, adopt the merge result of the principle ports. The zone information may also be cached on each switch such that merge calculations need not be performed again when a merge operation with the same configuration occurs in the future.

US Patent:

20060117112, Jun 1, 2006

Filed:

Nov 12, 2004

Appl. No.:

10/988180

Inventors:

Yi Lin - San Jose CA, US
Eric Warmenhoven - San Jose CA, US
Sundar Poudyal - Pleasanton CA, US
James Hu - Fremont CA, US

International Classification:

G06F 15/173
G06F 15/177
H04L 12/28

US Classification:

709238000, 709220000, 370351000

Abstract:

Methods, devices and systems for improved zone merge operations are disclosed. Two connected switches are arbitrated as an initiator and a receiver. The merge operation is initiated only by the initiator on an initiator/receiver inter-switch link. The initiator may initiate a merge request and the receiver may perform the computation of the difference between the old and the new zone. Either the whole configuration or only the differences are communicated between the switches. The merges may be done on a connected switch basis, not on a connected port basis. Only the principle ports in the principle inter-switch-link perform the merge operation. All the remaining ports, i.e. the non-principle ports, adopt the merge result of the principle ports. The zone information may also be cached on each switch such that merge calculations need not be performed again when a merge operation with the same configuration occurs in the future.

US Patent:

20060168109, Jul 27, 2006

Filed:

Nov 12, 2004

Appl. No.:

10/987441

Inventors:

Eric Warmenhoven - San Jose CA, US
Yi Lin - San Jose CA, US
Sundar Poudyal - Pleasanton CA, US
James Hu - Fremont CA, US

International Classification:

G06F 15/16
G06F 15/173

US Classification:

709218000, 709223000, 709228000

Abstract:

Methods, devices and systems for improved zone merge operations are disclosed. Two connected switches are arbitrated as an initiator and a receiver. The merge operation is initiated only by the initiator on an initiator/receiver inter-switch link. The initiator may initiate a merge request and the receiver may perform the computation of the difference between the old and the new zone. Either the whole configuration or only the differences are communicated between the switches. The merges may be done on a connected switch basis, not on a connected port basis. Only the principle ports in the principle inter-switch-link perform the merge operation. All the remaining ports, i.e. the non-principle ports, adopt the merge result of the principle ports. The zone information may also be cached on each switch such that merge calculations need not be performed again when a merge operation with the same configuration occurs in the future.

US Patent:

20130252034, Sep 26, 2013

Filed:

Mar 21, 2012

Appl. No.:

13/426193

Inventors:

James Hu - Saratoga CA, US
Sydney Kwan - Irvine CA, US

Assignee:

GO2 POWER, INC. - Irvine CA

International Classification:

H01M 16/00
H01M 8/04

US Classification:

429 9, 429444

Abstract:

A backup power system for industrial plants using purified hydrogen in critical processes. A smart valve at a hydrogen reservoir is used to steal hydrogen and divert the hydrogen to a fuel cell array providing backup power to critical processes. Before the fuel cell array comes online, backup power is provided by a battery array that can also supply backup power as the hydrogen supply is depleted.

US Patent:

49705652, Nov 13, 1990

Filed:

May 10, 1990

Appl. No.:

7/522476

Inventors:

Tsung-Ching Wu - San Jose CA
James C. Hu - Saratoga CA
John Y. Huang - Fremont CA

Assignee:

Atmel Corporation - San Jose CA

International Classification:

H01L 2504

US Classification:

357 235

Abstract:

A memory cell in an EPROM device which is totally sealed from ultraviolet light by a conductive cover without openings therein for leads to the cell's drain, source and gate. Electrical communication with the source is provided by direct contact with the conductive cover. Access to the drain and floating gate is provided by buried N+ implants, buried N+ layers or N-wells crossing underneath the sides of the cover. The memory cell has a single poly floating gate rather than a stacked floating gate/control gate combination. The buried N+ implant or N-well serves as the control gate and is capacitvely coupled to the floating gate via a thin oxide layer in a coupling area.

US Patent:

48596191, Aug 22, 1989

Filed:

Jul 15, 1988

Appl. No.:

7/219924

Inventors:

Tsung-Ching Wu - San Jose CA
Geeng-Chuan Chern - Campbell CA
James C. Hu - Saratoga CA

Assignee:

Atmel Corporation - San Jose CA

International Classification:

H01L 21265
H01L 2996

US Classification:

437 43

Abstract:

A process of fabricating high performance EPROMs in which memory cell devices and high voltage circuit devices are formed in p-type tub regions of high threshold voltage. The tub regions are formed by implanting boron ions in photolithographically defined memory cell and high voltage device areas of a p-type wafer substrate, then subjecting the substrate to a high temperature drive-in. The N-channel isolation field is formed separately and has a lower threshold voltage than the tub regions. The isolation field is formed by implanting boron ions around all device areas, including low voltage device areas, using a nitride mask and a low implantation energy. The wafer is then subjected to an anneal step followed by a field oxidation step. The memory cell and other MOS devices are finally formed in the appropriate defined regions. Since the isolation field's threshold voltage can be adjusted separately from the tub regions, the threshold voltage of the field can be reduced making it possible to reduce the isolation spacing of low voltage devices, reduce parasitic capacitance and increase device speed.

US Patent:

50949683, Mar 10, 1992

Filed:

Jan 28, 1991

Appl. No.:

7/647308

Inventors:

Steven J. Schumann - Sunnyvale CA
James C. Hu - Saratoga CA

Assignee:

Atmel Corporation - San Jose CA

International Classification:

H01L 21265
H01L 2172

US Classification:

437 43

Abstract:

An EEPROM design featuring narrow linear electrodes including a source, a drain, a thin oxide, channel and floating gate. A pair of linear, opposed field oxide barrier walls form widthwise boundaries of the active structure which can be very closely spaced. The drain electrode, implanted in the substrate, abuts both opposed field oxide lateral walls, but does not extend under either wall. The source, drain and channel are formed in a single implant followed by diffusion after the field oxide barrier walls are formed, but prior to formation of the floating gate. All but opposed field oxide walls in a stripe design. A control gate is disposed over the floating gate. The combination of opposed field oxide barrier walls, a stripe electrode design, and single step implant for electrode formation results in a very compact cell, utilizing a simplified EEPROM process.

Author:

James Hu

ISBN #:

9041123385