Jack K Lee

US Patent:

7646812, Jan 12, 2010

Filed:

Apr 1, 2005

Appl. No.:

11/098023

Inventors:

Edward A. Ludvig - Redwood City CA, US
Jack T. Lee - Bellevue WA, US
John P. Comito - Redwood City CA, US

Assignee:

Microsoft Corporation - Redmond WA

International Classification:

H04B 1/66

US Classification:

37524016, 37524013, 37524015, 37524014, 37524012, 37524024, 382238, 382236, 382232

Abstract:

Encoding functionality is described for producing encoded intra (I) pictures and predictive (P) pictures for consumption by an application running on a set-top box. The encoding functionality includes a pre-processing module which marks regions that should not be updated with a predetermined color code. An encoding module receives the output of the pre-processing module, and, in the event that the output contains the predetermined color code, produces a predictive (P) picture. In the predictive (P) picture, the encoding module produces macroblocks having zero motion vector and zero difference (or skipped macroblocks) corresponding to regions that were marked by the pre-processing module with the predetermined color code. The encoding module produces intra macroblocks for other regions of the picture (corresponding to update regions).

US Patent:

58917985, Apr 6, 1999

Filed:

Dec 20, 1996

Appl. No.:

8/771304

Inventors:

Brian Doyle - Cupertino CA
Jack Lee - Austin TX

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 21265

US Classification:

438624

Abstract:

A method for forming an insulator with a high dielectric constant on silicon is disclosed. This method overcomes one limitation of increasing the dielectric constant of a gate dielectric by using a high dielectric constant material, such as a paraelectric material, instead of silicon dioxide. First, nitrogen is implanted into the silicon through a sacrificial oxide layer. After annealing the substrate and stripping the sacrificial oxide, a dielectric layer is formed from a material with a high dielectric constant, such as a paraelectric material. Although the paraelectric material provides a source of oxygen for oxidation of silicon in subsequent high temperature process steps, no oxidation takes place due to the presence of the nitrogen in the silicon. Therefore, there is no undesired decrease in the overall capacitance of the dielectric system. When a gate electrode is formed on the dielectric layer, a nitrogen implant into the gate electrode can be used to prevent oxidation at the upper interface of the gate dielectric.

US Patent:

63067420, Oct 23, 2001

Filed:

Jan 5, 1999

Appl. No.:

9/225659

Inventors:

Brian Doyle - Cupertino CA
Jack Lee - Austin TX

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 2170

US Classification:

438591

Abstract:

A method for forming an insulator with a high dielectric constant on silicon is disclosed. This method overcomes one limitation of increasing the dielectric constant of a gate dielectric by using a high dielectric constant material, such as a paraelectric material, instead of silicon dioxide. First, nitrogen is implanted into the silicon through a sacrificial oxide layer. After annealing the substrate and stripping the sacrificial oxide, a dielectric layer is formed from a material with a high dielectric constant, such as a paraelectric material. Although the paraelectric material provides a source of oxygen for oxidation of silicon in subsequent high temperature process steps, no oxidation takes place due to the presence of the nitrogen in the silicon. Therefore, there is no undesired decrease in the overall capacitance of the dielectric system. When a gate electrode is formed on the dielectric layer, a nitrogen implant into the gate electrode can be used to prevent oxidation at the upper interface of the gate dielectric.

Author:

Jack Austell Lee

ISBN #:

0409376043

Author:

Jack Lee

ISBN #:

0340338784

Author:

Jack Lee

ISBN #:

0340401184

Author:

Jack Lee

ISBN #:

0470857544

Author:

Jack Lee

ISBN #:

0470857641

Author:

Jack Lee

ISBN #:

0790005239

Author:

Jack Lee

ISBN #:

0959792627

Author:

Jack C. Lee

ISBN #:

0387948082