Ieva Narkeviciute

US Patent:

20220238333, Jul 28, 2022

Filed:

Apr 12, 2022

Appl. No.:

17/658935

Inventors:

- Fremont CA, US
Ieva NARKEVICIUTE - Portland OR, US
Bo GONG - Sherwood OR, US
Bhadri N. VARADARAJAN - Beaverton OR, US

International Classification:

H01L 21/02
C23C 16/02
C23C 16/30
C23C 16/455
C23C 16/56
H01J 37/32

Abstract:

A doped or undoped silicon carbide (SiCON) film can be deposited in one or more features of a substrate for gapfill. After a first thickness of the doped or undoped silicon carbide film is deposited in the one or more features, the doped or undoped silicon carbide film is exposed to a remote hydrogen plasma under conditions that cause a size of an opening near a top surface of each of the one or more features to increase, where the conditions can be controlled by controlling treatment time, treatment frequency, treatment power, and/or remote plasma gas composition. Operations of depositing additional thicknesses of silicon carbide film and performing a remote hydrogen plasma treatment are repeated to at least substantially fill the one or more features. Various time intervals between deposition and plasma treatment may be added to modulate gapfill performance.

US Patent:

20220238334, Jul 28, 2022

Filed:

Apr 12, 2022

Appl. No.:

17/658937

Inventors:

- Fremont CA, US
Ieva NARKEVICIUTE - Portland OR, US
Bo GONG - Sherwood OR, US
Bhadri N. VARADARAJAN - Beaverton OR, US

International Classification:

H01L 21/02
C23C 16/02
C23C 16/30
C23C 16/455
C23C 16/56
H01J 37/32

Abstract:

A doped or undoped silicon carbide (SiCON) film can be deposited in one or more features of a substrate for gapfill. After a first thickness of the doped or undoped silicon carbide film is deposited in the one or more features, the doped or undoped silicon carbide film is exposed to a remote hydrogen plasma under conditions that cause a size of an opening near a top surface of each of the one or more features to increase, where the conditions can be controlled by controlling treatment time, treatment frequency, treatment power, and/or remote plasma gas composition. Operations of depositing additional thicknesses of silicon carbide film and performing a remote hydrogen plasma treatment are repeated to at least substantially fill the one or more features. Various time intervals between deposition and plasma treatment may be added to modulate gapfill performance.

US Patent:

20210391171, Dec 16, 2021

Filed:

Oct 10, 2019

Appl. No.:

17/286407

Inventors:

- Fremont CA, US
Ieva Narkeviciute - Portland OR, US
Bo Gong - Sherwood OR, US
Bhadri N. Varadarajan - Beaverton OR, US

International Classification:

H01L 21/02
H01J 37/32
C23C 16/02
C23C 16/30
C23C 16/56
C23C 16/455

Abstract:

A doped or undoped silicon carbide (SiCON) film can be deposited in one or more features of a substrate for gapfill. After a first thickness of the doped or undoped silicon carbide film is deposited in the one or more features, the doped or undoped silicon carbide film is exposed to a remote hydrogen plasma under conditions that cause a size of an opening near a top surface of each of the one or more features to increase, where the conditions can be controlled by controlling treatment time, treatment frequency, treatment power, and/or remote plasma gas composition. Operations of depositing additional thicknesses of silicon carbide film and performing a remote hydrogen plasma treatment are repeated to at least substantially fill the one or more features. Various time intervals between deposition and plasma treatment may be added to modulate gapfill performance.