Howard R Beratan

US Patent:

6361825, Mar 26, 2002

Filed:

Aug 20, 1996

Appl. No.:

08/699960

Inventors:

Howard R. Beratan - Richardson TX
Charles M. Hanson - Richardson TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

C23C 1640

US Classification:

4271261, 427162, 4273762, 42725531, 42725535, 42725536

Abstract:

A pyroelectric detector system, the pyroelectric detector element therefor and the method of making the detector element which comprises an integrated circuit ( ) and a pyroelectric detector element ( ) coupled to the integrated circuit and thermally isolated from the integrated circuit. The element includes a lead-containing pyroelectric layer having a pair of opposing surfaces and having a thickness to provide a resonant cavity for radiations in a predetermined frequency range. A bottom electrode ( ) opaque to radiations in the predetermined frequency range is secured to one of the pair of opposing surfaces and a top electrode ( ) is secured to the other of the pair of opposing surfaces which is semi-transparent to radiations in the predetermined frequency range. The top electrode is taken from the group consisting of platinum and nichrome. The lead-containing pyroelectric layer is preferably lead titanate.

US Patent:

6362068, Mar 26, 2002

Filed:

Feb 17, 1998

Appl. No.:

09/024799

Inventors:

Scott R. Summerfelt - Dallas TX
Howard Roy Beratan - Richardson TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2120

US Classification:

438396, 438 3, 438244, 438387, 438253

Abstract:

A capacitor dielectric with multiple layers of differing high dielectric constant materials such as SrTiO3 and BaSrTiO3 in which an inner layer has a higher dielectric constant but also higher leakage current than outer layers on each side of the inner layer which have lower leakage currents but also lower dielectric constants.

US Patent:

6432473, Aug 13, 2002

Filed:

Jun 1, 1995

Appl. No.:

08/458999

Inventors:

Scott R. Summerfelt - Dallas TX
Howard R. Beratan - Richardson TX
Bernard M. Kulwicki - N. Attleboro MA

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

B05D 512

US Classification:

427100, 4271263, 4273762

Abstract:

The invention described is a method of forming an improved dielectric material by adding lead to an original perovskite material having an original critical grain size to form a lead enhanced perovskite material, then forming a layer of the lead enhanced perovskite material having an average grain size less than the original critical grain size whereby the dielectric constant of the layer is substantially greater than the dielectric constant of the original perovskite material with an average grain size similar to the average grain size of the layer. The critical grain size, as used herein, means the largest grain size such that the dielectric constant starts to rapidly decrease with decreasing grain sizes. Preferably, the lead enhanced perovskite material is further doped with one or more acceptor dopants whereby the resistivity is substantially increased and/or the loss tangent is substantially decreased. Preferably, the original perovskite material has a chemical composition ABO , where A is one or more monovalent, divalent or trivalent elements, and B is one or more pentavalent, tetravalent, trivalent or divalent elements.

US Patent:

6593638, Jul 15, 2003

Filed:

Jun 7, 1995

Appl. No.:

08/477957

Inventors:

Scott R. Summerfelt - Dallas TX
Howard R. Beratan - Richardson TX
Bruce Gnade - Rowlett TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2900

US Classification:

257532, 257 43, 257917, 257310, 427 79, 4271263, 427226

Abstract:

A preferred embodiment of this invention comprises a conductive lightly donor doped perovskite layer (e. g. lightly La doped BST ), and a high-dielectric-constant material layer (e. g. undoped BST ) overlaying the conductive lightly donor doped perovskite layer. The conductive lightly donor doped perovskite layer provides a substantially chemically and structurally stable electrical connection to the high-dielectric-constant material layer. A lightly donor doped perovskite generally has much less resistance than undoped, acceptor doped, or heavily donor doped HDC materials. The amount of donor doping to make the material conductive (or resistive) is normally dependent on the process conditions (e. g. temperature, atmosphere, grain size, film thickness and composition). This resistivity may be further decreased if the perovskite is exposed to reducing conditions.

US Patent:

6777681, Aug 17, 2004

Filed:

Apr 25, 2001

Appl. No.:

09/844171

Inventors:

Thomas R. Schimert - Ovilla TX
Howard R. Beratan - Richardson TX
Charles M. Hanson - Dallas TX
Kevin L. Soch - Nevada City CA
John H. Tregilgas - Richardson TX

Assignee:

Raytheon Company - Waltham MA

International Classification:

G01J 502

US Classification:

2503384, 250330, 250332, 2503381

Abstract:

An infrared detector ( ) includes a substrate ( ) having thereon an array of detector elements ( ). Each detector element has a membrane ( ), which includes an amorphous silicon layer ( ) in contact with at least two electrodes ( ) that are made of a titanium/aluminum alloy which absorbs infrared radiation. In order to obtain a desired temperature coefficient of resistance (TCR), the amorphous silicon layer may optionally be doped. The effective resistance between the electrodes is set to a desired value by appropriate configuration of the electrodes and the amorphous silicon layer. The membrane includes two outer layers ( ) made of an insulating material. Openings ( ) may optionally be provided through the membrane.

US Patent:

6802987, Oct 12, 2004

Filed:

Oct 21, 1999

Appl. No.:

09/422380

Inventors:

K R Udayakumar - Dallas TX
Howard R. Beratan - Richardson TX
Charles M. Hanson - Richardson TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

C04B 35465

US Classification:

252 629R, 501136

Abstract:

Ferroelectric materials useful in monolithic uncooled infrared imaging use Ca and Sn substitutions in PbTiO3 and also have alternatives with dopants such as Dy, Ho, Bi, Ce, and Fe. The ferroelectrics may also be used in non-volatile integrated circuit memories.

US Patent:

8513605, Aug 20, 2013

Filed:

Apr 28, 2010

Appl. No.:

12/799628

Inventors:

Howard Beratan - Pittsburgh PA, US

Assignee:

L-3 Communications Corporation - New York NY

International Classification:

G01J 5/20

US Classification:

2503384, 2503381

Abstract:

A thermal absorption structure of a radiation thermal detector element may include an optically transitioning material configured such that optical conductivity of the thermal absorption structure is temperature sensitive and such that the detector element absorbs radiation less efficiently as its temperature increases, thus reducing its ultimate maximum temperature.

US Patent:

20130292789, Nov 7, 2013

Filed:

Jun 28, 2013

Appl. No.:

13/930844

Inventors:

Howard Beratan - Pittsburgh PA, US

International Classification:

H01L 37/00

US Classification:

257467, 438 54, 438 55

Abstract:

A thermal absorption structure of a radiation thermal detector element may include an optically transitioning material configured such that optical conductivity of the thermal absorption structure is temperature sensitive and such that the detector element absorbs radiation less efficiently as its temperature increases, thus reducing its ultimate maximum temperature.