Hong Z Pesetski

US Patent:

20120081184, Apr 5, 2012

Filed:

Oct 1, 2010

Appl. No.:

12/896349

Inventors:

Aaron A. PESETSKI - Gambrills MD, US
Hong Z. Pesetski - Gambrills MD, US
Dale E. Dawson - Glen Burnie MD, US

Assignee:

Northrop Grumman Systems Corporation - Los Angeles CA

International Classification:

H03F 3/04

US Classification:

330310

Abstract:

High impedance, high frequency nanoscale device electronics configured to interface with low impedance loads include an impedance transforming stage constructed of multiple nanoscale devices, such as carbon nanotube field-effect transistors. In an embodiment of the present invention, an impedance transforming output stage of a multistage amplifier is configured to drive a 50 ohm transmission line with unity voltage gain using multiple carbon nanotube field-effect transistors in parallel. In a further embodiment, a receiver provided for an electronically steered receive array is a monolithic, lumped-element system formed from nanoscale devices and configured to interface with the external electrical systems via a single transmission line.

US Patent:

20080296562, Dec 4, 2008

Filed:

May 31, 2007

Appl. No.:

11/806365

Inventors:

James M. Murduck - Ellicott City MD, US
John Douglas Adam - Millersville MD, US
James E. Baumgardner - Ellicott City MD, US
Aaron A. Pesetski - Gambrills MD, US
Hong Zhang Pesetski - Gambrills MD, US
John Xavier Przybysz - Severna Park MD, US

International Classification:

H01L 51/40
H01L 51/30
C25D 7/00

US Classification:

257 40, 438 99, 204242, 219678, 257E51006, 257E5104

Abstract:

Methods and apparatus for fabricating carbon nanotubes (CNTs) and carbon nanotube devices. These include a method of fabricating self-aligned CNT field-effect transistors (FET), a method and apparatus of selectively etching metallic CNTs and a method and apparatus of fabricating an oxide in a carbon nanotube (CNT) device. These methods and apparatus overcome many of the disadvantages and limitations of the prior art.