Hiram C Cervera

US Patent:

20090253078, Oct 8, 2009

Filed:

Mar 31, 2009

Appl. No.:

12/415690

Inventors:

Nikolaos Bekiaris - Santa Clara CA, US
Junyan Dai - Santa Clara CA, US
Hiram Cervera - San Jose CA, US
Hali Janine Lana Forstner - Belmont CA, US

Assignee:

Sokudo Co., Ltd. - Kyoto

International Classification:

G03F 7/20
G03B 27/62

US Classification:

430312, 430324, 430325, 355 75

Abstract:

A method of processing a substrate includes forming a first layer having a photosensitive response to incident radiation on the substrate, forming a first pattern in the first layer, and exposing the first pattern to ultra-violet radiation. The exposure of the first pattern to ultra-violet radiation increases the resistance of the first pattern to a developer. The method also includes forming a conformal protective layer over the first pattern and at least a portion of the substrate. The method further includes forming a second layer having a photosensitive response to incident radiation over the conformal protective layer and forming a second pattern in the second layer.