Heshmat Khajezadeh

US Patent:

41705017, Oct 9, 1979

Filed:

Feb 15, 1978

Appl. No.:

5/877856

Inventors:

Heshmat Khajezadeh - Somerville NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 2120
H01L 2174

US Classification:

148175

Abstract:

A semiconductor integrated circuit device includes circuit elements having relatively different performance characteristics in which buried regions having different chemical elements are used to autodope an epitaxial layer to different degrees.

US Patent:

41005651, Jul 11, 1978

Filed:

Aug 25, 1977

Appl. No.:

5/827569

Inventors:

Heshmat Khajezadeh - Somerville NJ
Stephen Carl Ahrens - Delran NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 2702

US Classification:

357 51

Abstract:

A monolithic semiconductor device including a resistor comprising a first region of one type conductivity, has means for controllably establishing the value of the resistor comprising two additional regions of the opposite type conductivity disposed respectively on opposite sides of the conductive path of the resistor, whereby the width of the resistor is defined by the extent of the additional regions into the first region. Where the monolithic semiconductor device comprises an integrated circuit device including a lateral transistor, the additional regions may be formed simultaneously with the emitter and collector regions of the transistor while utilizing the same doping mask, whereby any variation in the base width of the transistor is made proportional to the variation in the width of the resistor. Such a resistor has a value proportional to the beta of the transistor and may be utilized with circuit means for connecting the resistor with the transistor to compensate for a variation in the base width of the transistor.

US Patent:

41060482, Aug 8, 1978

Filed:

Apr 27, 1977

Appl. No.:

5/791424

Inventors:

Heshmat Khajezadeh - Somerville NJ

Assignee:

RCA Corp. - New York NY

International Classification:

H01L 2702

US Classification:

357 40

Abstract:

A protection device for integrated circuits used on television sets is described which protects the devices against damage of the type caused by kinescope arcing. The protection device described comprises a diode having a first region of the same conductivity type as the emitter region of the protected bipolar transistor and a second region of opposite conductivity type to the first region which second region contacts only the collector of the protected transistor. An electrode contacts the first region of the diode over a much larger area than the area the same electrode makes contact to the emitter of the protected bipolar transistor in order to allow large transient currents to go to ground through the diode rather than through the transistor thereby protecting the transistor from destruction due to transient discharges.

US Patent:

40018725, Jan 4, 1977

Filed:

May 23, 1975

Appl. No.:

5/580286

Inventors:

Heshmat Khajezadeh - Somerville NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 2934
H01L 2348
H01L 2328
H01L 2330

US Classification:

357 54

Abstract:

A plastic-packaged semiconductor device includes a semiconductor chip with a hermetic passivation and metallization system, including silicon nitride passivation and noble metal interconnection conductors. The device is highly resistant to degradation in the presence of water vapor and corrosive atmospheres.

US Patent:

40578941, Nov 15, 1977

Filed:

Feb 9, 1976

Appl. No.:

5/656295

Inventors:

Heshmat Khajezadeh - Somerville NJ
Stephen Carl Ahrens - Delran NJ

Assignee:

RCA Corporation - New York NY

International Classification:

B01J 1700

US Classification:

29577C

Abstract:

A monolithic semiconductor device including a resistor comprising a first region of one type conductivity, has means for controllably establishing the value of the resistor comprising two additional regions of the opposite type conductivity disposed respectively on opposite sides of the conductive path of the resistor, whereby the width of the resistor is defined by the extent of the additional regions into the first region. Where the monolithic semiconductor device comprises an integrated circuit device including a lateral transistor, the additional regions may be formed simultaneously with the emitter and collector regions of the transistor while utilizing the same doping mask, whereby any variation in the base width of the transistor is made proportional to the variation in the width of the resistor. Such a resistor has a value proportional to the beta of the transistor and may be utilized with circuit means for connecting the resistor with the transistor to compensate for a variation in the base width of the transistor.

US Patent:

42020069, May 6, 1980

Filed:

May 21, 1979

Appl. No.:

6/041086

Inventors:

Heshmat Khajezadeh - Somerville NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 2704

US Classification:

357 63

Abstract:

A semiconductor integrated circuit device includes circuit elements having relatively different performance characteristics in which buried regions having different chemical elements are used to autodope an epitaxial layer to different degrees.

US Patent:

43050867, Dec 8, 1981

Filed:

Aug 27, 1979

Appl. No.:

6/070020

Inventors:

Heshmat Khajezadeh - Somerville NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 2934

US Classification:

357 54

Abstract:

A metal nitride oxide semiconductor (MNOS) memory device having improved memory retention capability is described. Improved memory retention is obtained by ion implanting a non-doping material, such as argon or nitrogen, or a low concentration of an N type dopant, such as phosphorus, into the oxide before depositing the nitride layer. It is believed that the ion implantation results in a nitride-oxide interface conducive to charge storage. The MNOS device produced has a considerably improved memory retention characteristic when compared with an MNOS device which did not have the ion implantation.