Hengpeng Wu - Hillsborough NJ, US Jianhui Shan - Pennington NJ, US Shuji Sue Ding-Lee - Branchburg NJ, US Eleazor B. Gonzalez - Bloomfield NJ, US Mark O. Neisser - Whitehouse Station NJ, US
Assignee:
AZ Electronic Materials USA Corp. - Somerville NJ
International Classification:
C08G 63/00
US Classification:
528272, 4284111, 428480, 525480, 528271
Abstract:
The present invention relates to a process for making a polyester where a dianhydride is reacted with a diol. The resulting polyester can be further reacted with a compound selected from aromatic oxides, aliphatic oxides, alkylene carbonates, alcohols, and mixtures thereof.
Hengpeng Wu - Hillsborough NJ, US Shuji Ding-Lee - Branchburg NJ, US Zhong Xiang - Somerset NJ, US Joseph E. Oberlander - Phillipsburg NJ, US Mark O. Neisser - Whitehouse Station NJ, US Eleazar Gonzalez - Bloomfield NJ, US Jainhui Shan - Pennington NJ, US
The present invention relates to a novel antireflective coating composition comprising a polymer, a crosslinking agent and an acid generator. The present invention further relates to a process for using the novel composition, particularly at 193 nm. The polymer of the present invention contains at least one unit selected from structures 1, 2 and 3,.
Hengpeng Wu - Hillsborough NJ, US David Abdallah - Bernardsville NJ, US Mark Neisser - Whitehouse Station NJ, US PingHung Lu - Bridgewater NJ, US Ruzhi Zhang - Pennington NJ, US M. Dalil Rahman - Flemington NJ, US
Assignee:
AZ Electronic Materials USA Corp - Somerville NJ
International Classification:
G03F 7/09 G03F 7/11 G03F 7/30
US Classification:
4302711, 430326, 430325, 438952, 525219
Abstract:
The present invention relates to an antireflective coating composition comprising, (i) a thermal acid generator; (ii) a crosslinkable polymer comprising at least one aromatic group; and, (iii) a polymeric crosslinker comprising at least one unit of structure (6),.
Hengpeng Wu - Hillsborough NJ, US Shuji Ding-Lee - Branchburg NJ, US Zhong Xiang - Edison NJ, US Aritaka Hishida - Bedminster NJ, US Jianhui Shan - Pennington NJ, US Hong Zhuang - Raritan NJ, US
Assignee:
AZ Electronic Materials USA Corp. - Somerville NJ
International Classification:
G03F 7/00 G03F 7/004
US Classification:
4302701, 4302711, 430311, 430330
Abstract:
The present invention relates to a coating solution comprising a polymer obtained by reacting a glycoluril compound with at least one reactive compound containing at least one hydroxy group and/or at least one acid group, and further where the polymer is soluble in an organic solvent. The invention also relates to a process for imaging a photoresist coated over such a coating composition and to a polymer for the coating composition.
Hengpeng Wu - Hillsborough NJ, US Mark O. Neisser - Whitehouse Station NJ, US Shuji S Ding-Lee - Branchburg NJ, US Aritaka Hishida - Bedminster NJ, US Joseph E. Oberlander - Phillipsburg NJ, US Medhat E. Toukhy - Flemington NJ, US
The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent, and optionally, a photoacid generator and/or an acid and/or a thermal acid generator. The invention further relates to a process for using such a composition.
Solvent Mixtures For Antireflective Coating Compositions For Photoresists
Zhong Xiang - Edison NJ, US Hengpeng Wu - Hillsborough NJ, US Hong Zhuang - Raritan NJ, US Eleazar Gonzalez - Bloomfield NJ, US Mark O. Neisser - Whitehouse Station NJ, US
The invention relates to an antireflective coating composition capable of being coated beneath a photoresist layer, where the antireflective coating composition comprises a polymeric crosslinker and a solvent mixture, where the solvent mixture comprises at least one primary organic solvent and at least one secondary organic solvent selected from any of structures 1, 2 and 3,.