Harold J Wiesmann

US Patent:

6794339, Sep 21, 2004

Filed:

Sep 12, 2001

Appl. No.:

09/950888

Inventors:

Harold Wiesmann - Stony Brook NY
Vyacheslav Solovyov - Rocky Point NY

Assignee:

Brookhaven Science Associates - Upton NY

International Classification:

C23C 404

US Classification:

505470, 505500, 427 62, 427380, 427350

Abstract:

The present invention is a method of forming thick films of crystalline YBa Cu O that includes forming a precursor film comprising barium fluoride (BaF ), yttrium (Y) and copper (Cu). The precursor film is heat-treated at a temperature above 500Â C. in the presence of oxygen, nitrogen and water vapor at sub-atmospheric pressure to form a crystalline structure. The crystalline structure is then annealed at about 500Â C. in the presence of oxygen to form the crystalline YBa Cu O film. The YBa Cu O film formed by this method has a resistivity of from about 100 to about 600 Ohm-cm at room temperature and a critical current density measured at 77 K in a magnetic field of 1 Tesla of about 1. 0Ã10 Ampere per square centimeter (0. 1 MA/cm ) or greater.

US Patent:

7622426, Nov 24, 2009

Filed:

Oct 6, 2005

Appl. No.:

11/245138

Inventors:

Vyacheslav Solovyov - Rocky Point NY, US
Harold Wiesmann - Stony Brook NY, US

Assignee:

Brookhaven Science Associates, LLC - Upton NY

International Classification:

H01L 39/24
C23C 4/04

US Classification:

505473, 505434, 505470, 2525191, 2525202, 427 62, 29599, 42359412

Abstract:

The present invention is a method for producing a crystalline end-product. The method comprising exposing a fluoride-containing precursor to a hydrogen fluoride absorber under conditions suitable for the conversion of the precursor into the crystalline end-product.

US Patent:

8216978, Jul 10, 2012

Filed:

Feb 26, 2008

Appl. No.:

12/037338

Inventors:

Harold Wiesmann - Stony Brook NY, US
Vyacheslav Solovyov - Rocky Point NY, US

Assignee:

Brookhaven Science Associates, LLC - Upton NY

International Classification:

B05D 5/12
H01L 39/24

US Classification:

505446, 505461, 505434, 505470, 505477, 427 62, 427377, 4274211, 427569

Abstract:

This invention provides a method of making a fluorinated precursor of a superconducting ceramic. The method comprises providing a solution comprising a rare earth salt, an alkaline earth metal salt and a copper salt; spraying the solution onto a substrate to provide a film-covered substrate; and heating the film-covered substrate in an atmosphere containing fluorinated gas to provide the fluorinated precursor.

US Patent:

7361377, Apr 22, 2008

Filed:

Jul 18, 2003

Appl. No.:

10/622843

Inventors:

Harold Wiesmann - Stony Brook NY, US
Vyacheslav Solovyov - Rocky Point NY, US

Assignee:

Brookhaven Science Associates, LLC - Upton NY

International Classification:

B05D 5/12
H01L 39/24

US Classification:

427 62, 505434, 505447, 505473, 505477, 427377, 4274211, 427569, 29599

Abstract:

This invention provides a method of making a fluorinated precursor of a superconducting ceramic. The method comprises providing a solution comprising a rare earth salt, an alkaline earth metal salt and a copper salt; spraying the solution onto a substrate to provide a film-covered substrate; and heating the film-covered substrate in an atmosphere containing fluorinated gas to provide the fluorinated precursor.

US Patent:

20130035236, Feb 7, 2013

Filed:

Jun 8, 2012

Appl. No.:

13/492597

Inventors:

Harold Wiesmann - Stony Brook NY, US
Vyacheslav Solovyov - Rocky Point NY, US

Assignee:

Brookhaven Science Associates, LLC - Upton NY

International Classification:

H01L 39/12
H01L 39/24

US Classification:

505470, 505510, 505500, 427 62, 2525211

Abstract:

This invention provides a method of making a fluorinated precursor of a superconducting ceramic. The method comprises providing a solution comprising a rare earth salt, an alkaline earth metal salt and a copper salt; spraying the solution onto a substrate to provide a film-covered substrate; and heating the film-covered substrate in an atmosphere containing fluorinated gas to provide the fluorinated precursor.

US Patent:

42371503, Dec 2, 1980

Filed:

Apr 18, 1979

Appl. No.:

6/030974

Inventors:

Harold J. Wiesmann - Wantagh NY

Assignee:

The United States of America as represented by the United States
Department of Energy - Washington DC

International Classification:

C01B 3302

US Classification:

427 74

Abstract:

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH. sub. 4) or other gases comprising H and Si, from a tungsten or carbon foil heated to a temperature of about 1400. degree. -1600. degree. C. , in a vacuum of about 10. sup. -6 to 19. sup. -4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.

US Patent:

45366071, Aug 20, 1985

Filed:

Mar 1, 1984

Appl. No.:

6/585159

Inventors:

Harold J. Wiesmann - Wantagh NY

International Classification:

H01L 3106

US Classification:

136249

Abstract:

A photovoltaic tandem cell comprises an amorphous cell and a polycrystalline heterojunction cell. The cells are in optical series and separated by a transparent contact layer.

US Patent:

42371511, Dec 2, 1980

Filed:

Jun 26, 1979

Appl. No.:

6/052278

Inventors:

Myron Strongin - Center Moriches NY
Arup K. Ghosh - Rocky Point NY
Harold J. Wiesmann - Wantagh NY
Edward B. Rock - Oxford, GB
Harry A. Lutz - Midlothian VA

Assignee:

The United States of America as represented by the United States
Department of Energy - Washington, D. C. 20545

International Classification:

C01B 3302

US Classification:

427 74

Abstract:

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH. sub. 4) or other gases comprising H and Si, at elevated temperatures of about 1700. degree. -2300. degree. C. , and preferably in a vacuum of about 10. sup. -8 to 10. sup. -4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.