Harold S Jacobs

US Patent:

43822614, May 3, 1983

Filed:

May 5, 1980

Appl. No.:

6/146560

Inventors:

Elmer Freibergs - Toms River NJ
Robert E. Horn - Middletown NJ
Harold Jacobs - West Long Branch NJ

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

H01Q 326

US Classification:

343854

Abstract:

A millimeter wave line scanner is disclosed providing steered fan-shaped ms from opposite faces at substantially equal angles of a semiconductor waveguide, rectangular in cross section, and having a plurality of equally spaced metallic perturbations or strips disposed on one of the two radiating sides or faces. Different angles of scan are selectively obtained by means of at least one distributed longitudinal PIN diode formed on an adjoining side of the semiconductor waveguide having electrical circuit means coupled thereto for controlling the diode's conductivity which acts to change the guide wavelength and accordingly cause a variation in radiation angle of the two equal beams radiating from opposite faces. The waveguide with one or more PIN diodes may also be used as a phase shifter. To reduce losses, a dielectric insulating layer is disposed between each PIN diode and the waveguide, which prevents the propagation of the wave into the PIN diode.

US Patent:

45090092, Apr 2, 1985

Filed:

May 19, 1983

Appl. No.:

6/496165

Inventors:

Harold Jacobs - West Long Branch NJ
Samuel Dixon - Neptune NJ
Edmund E. Malecki - Rumson NJ

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

G01R 2304

US Classification:

324 95

Abstract:

A radiation measurement means is shown which has the capability of detect radiation in both the millimeter wave, and the infrared, frequency regions. A basic self-oscillating Gunn diode is enclosed in a donut shaped silicon ring. The presence of infrared energy will create holes and electrons in the silicon material, altering its conductivity, and lower the power of oscillation. The realized drop in oscillating power identifies the infrared. Millimeter wave radiation is detected because an intermediate frequency is generated as the Gunn diode operates as a self-oscillating mixer of the new different frequency with its own oscillating frequency. Thus it is possible to detect signals from both ranges, in a single device.

US Patent:

39792722, Sep 7, 1976

Filed:

Jul 18, 1974

Appl. No.:

5/489872

Inventors:

Metro M. Chrepta - Neptune NJ
Harold Jacobs - West Long Branch NJ

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

H01L 21203
H01L 21265
H01L 2138

US Classification:

204192

Abstract:

A method of fabricating semiconductor devices having a long lifetime for the minority charge carriers by applying a voltage across one electrode composed of a piece of intrinsic semiconductor material and another electrode composed of an alloy including an impurity. The two electrodes are moved into proximity to cause an arc to be drawn therebetween which etches out a region of the semiconductor and in turn vaporizes the alloy which is deposited and implanted in the etched region to form a junction device. In one form of device produced in accordance with the process a series of regions alternately of opposite conductivity (P and N) type are formed on the semiconductor in spaced relationship and the device is positioned in electrical contact with the surface of a semiconductor dielectric waveguide. The P and N regions of the device are electrically biased to cause a controllable excess minority carrier density making the device highly conductive and capable of changing the wavelength of a signal transmitted through the waveguide to effect a desired phase shift.

US Patent:

43420109, Jul 27, 1982

Filed:

May 27, 1980

Appl. No.:

6/153299

Inventors:

Samuel Dixon - Neptune NJ
Harold Jacobs - West Long Branch NJ

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

H01P 123

US Classification:

333 17L

Abstract:

A dielectric waveguide power limiter for a self-oscillating mixer operating n millimeter-wave frequencies. The limiter includes a high resistivity silicon dielectric waveguide and a Gunn oscillator. A plurality of dielectric resonators each including a high uniaxial anisotropy ferrite sphere embedded therein are positioned between the power input end of the waveguide and the Gunn oscillator.

US Patent:

45546800, Nov 19, 1985

Filed:

Aug 1, 1983

Appl. No.:

6/519154

Inventors:

Harold Jacobs - West Long Branch NJ
Samuel Dixon - Neptune NJ

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

H04B 126

US Classification:

455326

Abstract:

A triple Gunn diode self-oscillating mixer system is shown which can mix nals in the VHF range substantially without introducing any noise and with high input signal power handling capacity and with higher output mixed signal power than conventional, owing to boosted power from more than one microwave cavity. The device is comprised of three self-oscillating Gunn diode cavities connected by 180. degree. phase shift coax lines for injection locking. The device handles larger power levels without burnout as compared to conventional mixer devices such as Schottky barrier diodes having nearly 30 times less burnout capacity.

US Patent:

39597946, May 25, 1976

Filed:

Sep 26, 1975

Appl. No.:

5/617211

Inventors:

Metro M. Chrepta - Neptune NJ
Harold Jacobs - West Long Branch NJ

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

H01Q 326

US Classification:

343701

Abstract:

A single element line scanner applicable to millimeter or submillimeter w beam steering which includes a semiconductor waveguide made of a high resistivity bulk single crystal intrinsic semiconductor material such as silicon. Parallel spaced radiator elements are disposed on one major or top surface of the semiconductor waveguide transverse to the direction of wave propagation along the waveguide. Parallel spaced PIN diodes are disposed on the other or bottom major surface of the semiconductor waveguide transverse to the direction of wave propagation. The PIN diodes are spaced close enough to prevent radiation from escaping outwardly from the bottom major surface and are provided with a variable forward bias to produce a conductivity sheet. The conductivity sheet on the bottom major surface is electronically modulated as a function of the bias current for a given frequency and the variation of such a conductivity sheet changes the wavelengths in the semiconductor waveguide. The changing wavelengths provide variable wavelength spacing between the spaced radiator elements.

US Patent:

42031176, May 13, 1980

Filed:

Sep 28, 1978

Appl. No.:

5/946687

Inventors:

Harold Jacobs - West Long Branch NJ
Robert E. Horn - Middletown NJ

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

H01Q 326

US Classification:

343701

Abstract:

A millimeter wave line scanner is disclosed providing steered fan-shaped ms from opposite faces at substantially equal angles of a semiconductor waveguide, rectangular in cross section, and having a plurality of equally spaced metallic perturbations or strips disposed on one of the two radiating sides or faces. Different angles of scan are selectively obtained by means of at least one distributed longitudinal PIN diode formed on an adjoining side of the semiconductor waveguide having electrical circuit means coupled thereto for controlling the diode's conductivity which acts to change the guide wavelength and accordingly cause a variation in radiation angle of the two equal beams radiating in opposite directions and by means coupling energy of changing frequency to the semiconductor waveguide.

US Patent:

45732132, Feb 25, 1986

Filed:

Jun 27, 1983

Appl. No.:

6/507886

Inventors:

Samuel Dixon - Neptune NJ
Harold Jacobs - West Long Branch NJ

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

H04B 126

US Classification:

455330

Abstract:

A dual Gunn self-oscillating mixer is shown which can mix signals in the range substantially without introducing any noise and with high input signal power handling capacity and with higher output mixed signal power than conventional, owing to boosted power from more than one microwave cavity. The device is comprised of two cavities and connected by a 180. degree. phase shift coax line for injection locking, or a cavity wall hole in yet another embodiment. The device handles larger power levels without burning out as compared to conventional type mixer devices such as Schottky barrier diodes having nearly 30 times the burnout susceptibility.

Author:

Harold Jacobs

ISBN #:

0671207253

Author:

Harold R. Jacobs

ISBN #:

0716704390

Author:

Harold R. Jacobs

ISBN #:

0716704560

Author:

Harold R. Jacobs

ISBN #:

0716710471

Author:

Harold R. Jacobs

ISBN #:

0716710757

Author:

Harold R. Jacobs

ISBN #:

0716713268

Author:

Harold R. Jacobs

ISBN #:

0716713276

Author:

Harold R. Jacobs

ISBN #:

0716713306